- Drift current dominated terahertz radiation from InN at low-density excitation - art. no. 262102
[作者:Lin, KI; Tsai, JT; Wang, TS; Hwang, JS; Chen, MC; Chi, GC,期刊:Applied Physics Letters, 页码:62102-62102 , 文章类型: Article,,卷期:2008年93-26]
- This letter investigates the polarity of terahertz radiation from indium nitride (InN) excited by femtosecond optical pulses wherein a central wavelength of around 790 nm is measured. The InN epilayers are grown by metal...
- Electron hole-phonon interaction, correlation of structure, and conductivity in single crystal La0.9Sr0.1FeO3-delta - art. no. 262103
[作者:Braun, A; Richter, J; Harvey, AS; Erat, S; Infortuna, A; Frei, A; Pomjakushina, E; Mun, BS; Holtappels, P; Vogt, U; Conder, K; Gauckler, LJ; Graule, T,期刊:Applied Physics Letters, 页码:62103-62103 , 文章类型: Article,,卷期:2008年93-26]
- The conductivity and structure of the hole-doped polaron conductor La0.9Sr0.1FeO3-delta are reported for elevated temperatures. The conductivity increases exponentially with temperature to a maximum and decreases for T>7...
- Influence of the illumination on weak antilocalization in an AlxGa1-xN/GaN heterostructure with strong spin-orbit coupling - art. no. 262104
[作者:Zhou, WZ; Lin, T; Shang, LY; Sun, L; Gao, KH; Zhou, YM; Yu, G; Tang, N; Han, K; Shen, B; Guo, SL; Gui, YS; Chu, JH,期刊:Applied Physics Letters, 页码:62104-62104 , 文章类型: Article,,卷期:2008年93-26]
- The weak antilocalization effects of the two-dimensional electron gas in a high mobility AlxGa1-xN/GaN heterostructure have been investigated by means of magnetotransport measurements before and after illumination. The z...
- Electronic functionalization of solid-to-liquid interfaces between organic semiconductors and ionic liquids: Realization of very high performance organic single-crystal transistors - art. no. 263305
[作者:Uemura, T; Hirahara, R; Tominari, Y; Ono, S; Seki, S; Takeya, J,期刊:Applied Physics Letters, 页码:63305-63305 , 文章类型: Article,,卷期:2008年93-26]
- High-performance electronic function of current amplification is realized with the use of solid-to-liquid interfaces between organic semiconductors and ionic liquid. To hold in place the ionic liquid of 1-ethyl-3-methyl-...
- Explosive vapor sensor using poly (3-hexylthiophene) and Cu-II tetraphenylporphyrin composite based organic field effect transistors - art. no. 263306
[作者:Dudhe, RS; Tiwari, SP; Raval, HN; Khaderbad, MA; Singh, R; Sinha, J; Yedukondalu, M; Ravikanth, M; Kumar, A; Rao, VR,期刊:Applied Physics Letters, 页码:63306-63306 , 文章类型: Article,,卷期:2008年93-26]
- Organic field effect transistors based on poly(3-hexylthiophene) and Cu-II tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitrobased explosive compounds, viz., 1,3,5-trinitro-1,3,5...
- Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge - art. no. 263502
[作者:Yu, HY; Chang, SZ; Aoulaiche, M; Wang, XP; Adelmann, C; Kazer, B; Absil, P; Lauwers, A; Biesemans, S,期刊:Applied Physics Letters, 页码:63502-63502 , 文章类型: Article,,卷期:2008年93-26]
- The mechanism governing threshold voltage (V-t) modulation in NiSi/SiON n-channel metal-oxide-semiconductor field-effect transistors when doping with rare-earth elements (dysprosium or Dy in this work) is studied. In add...
- Luminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode - art. no. 261117
[作者:Fang, H; Sang, LW; Zhao, LB; Qi, SL; Zhang, YZ; Yang, XL; Yang, ZJ; Zhang, GY,期刊:Applied Physics Letters, 页码:61117-61117 , 文章类型: Article,,卷期:2008年93-26]
- A kind of phosphor-free GaN based white light-emitting diode was fabricated with a strain adjusting InGaN interlayer. The origin of the strain adjusted white luminescent properties was studied with cathodoluminescence, a...
- Diagnostics of ballistic electrons in a dc/rf hybrid capacitively coupled discharge - art. no. 261502
[作者:Xu, L; Chen, L; Funk, M; Ranjan, A; Hummel, M; Bravenec, R; Sundararajan, R; Economou, DJ; Donnelly, VM,期刊:Applied Physics Letters, 页码:61502-61502 , 文章类型: Article,,卷期:2008年93-26]
- The energy distribution of ballistic electrons in a dc/rf hybrid parallel-plate capacitively coupled plasma reactor was measured. Ballistic electrons originated as secondaries produced by ion and electron bombardment of ...
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