- Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application
[作者:Zhou, P; Lv, HB; Yin, M; Tang, L; Song, YL; Tang, TA; Lin, YY; Bao, A; Wu, A; Cai, S; Wu, H; Liang, C; Chi, MH,期刊:Journal Of Vacuum Science & Technology B, 页码:1030-1032 , 文章类型: Article,,卷期:2008年26-3]
- The authors found CuOx thin film with gradual oxygen concentration (GOC) distribution enhances resistive switching characteristics for nonvolatile memory applications. By using Al/GOC CuOx/Cu structure, not only no formi...
- Field-emission cascades prepared by boron nitride cluster beam deposition
[作者:Song, FQ; Zhou, F; Han, M; Wan, JG; Liu, ZW; Zhou, JF; Wang, GH,期刊:Journal Of Vacuum Science & Technology B, 页码:1038-1040 , 文章类型: Article,,卷期:2008年26-3]
- Boron nitride nanogranular films on n-type silicon substrates were prepared and their field-emission performance was tested. The films started their electron emission at a mean electric field of 4.0 V/mu m. The current d...
- Molecular beam epitaxy III-nitride growth for polarization sensitive devices based on M-plane films with in situ real time analysis by spectroscopic ellipsometry
[作者:Boney, C; Misra, P; Pillai, R; Starikov, D; Bensaoula, A,期刊:Journal Of Vacuum Science & Technology B, 页码:1049-1052 , 文章类型: Article,,卷期:2008年26-3]
- Nonpolar oriented III nitrides have recently attracted considerable interest, owing to the absence of spontaneous and piezoelectric polarization and resulting electrostatic fields in heterostructures, which can be detrim...
- Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N-2/Ar source gas mixtures
[作者:Oye, MM; Bank, SR; Ptak, AJ; Reedy, RC; Goorsky, MS; Holmes, AL,期刊:Journal Of Vacuum Science & Technology B, 页码:1058-1063 , 文章类型: Article,,卷期:2008年26-3]
- Unintentional Ca incorporation caused by Ca-contaminated substrate surfaces on as-purchased GaAs wafers are known to limit the efficiency of solar cells based on dilute nitride materials. This article focuses on further ...
- Growth and structural characteristics of GaN/AlN/nanothick gamma-Al2O3/Si (111)
[作者:Lee, WC; Lee, YJ; Tung, LT; Wu, SY; Lee, CH; Hong, M; Ng, HM; Kwo, J; Hsu, CH,期刊:Journal Of Vacuum Science & Technology B, 页码:1064-1067 , 文章类型: Article,,卷期:2008年26-3]
- The authors report on the growth of GaN by nitrogen plasma-assisted molecular beam epitaxy (MBE) on a 2 in. Si (111) substrates with a nanothick (similar to 4.8 nm thick) gamma-Al2O3 as a template/buffer. A thin layer of...
- Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice
[作者:Rao, TVC; Antoszewski, J; Rodriguez, JB; Plis, E; Krishna, S; Faraone, L,期刊:Journal Of Vacuum Science & Technology B, 页码:1081-1083 , 文章类型: Article,,卷期:2008年26-3]
- The authors have investigated electrical transport in a type II GaSb/InAs superlattice grown on GaSb using "quantitative mobility spectrum analysis." Their results indicate that the superlattice contributes a lone electr...
- In(Ga, Al)As quantum dot/wire growth on InP
[作者:Tzeng, TE; Feng, DJY; Chen, CY; Lay, TS,期刊:Journal Of Vacuum Science & Technology B, 页码:1084-1088 , 文章类型: Article,,卷期:2008年26-3]
- The authors have investigated the growth of dots/wires on InP substrates by tuning the In(Ga, Al)As compositions for dots/wires and buffer layers. Dots and wires with compositions including InAs, In0.95Al0.05As, In0.95Ga...
- Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates
[作者:Mendez-Garcia, VH; Ramirez-Elias, MG; Gorbatchev, A; Cruz-Hernandez, E; Rojas-Ramirez, JS; Martinez-Velis, I; Zamora-Peredo, L; Lopez-Lopez, M,期刊:Journal Of Vacuum Science & Technology B, 页码:1093-1096 , 文章类型: Article,,卷期:2008年26-3]
- The authors report the molecular beam epitaxy growth and characterization of AlGaAs/GaAs(631) heterostructures grown at different As-4 molecular beam equivalent pressures. The reflection high-energy electron diffraction ...
- Direct electron beam patterning and molecular beam epitaxy growth of InAs: Site definition of quantum dots
[作者:Yokota, H; Tsunashima, K; Iizuka, K; Okamoto, H,期刊:Journal Of Vacuum Science & Technology B, 页码:1097-1099 , 文章类型: Article,,卷期:2008年26-3]
- An electron beam (EB) lithography technique to form patterns directly on a semiconductor crystal surface, without using a resist or an oxide film, combined with molecular beam epitaxy (MBE) growth is described for potent...
- Improved quantum confinement of self-assembled high-density InAs quantum dot molecules in AlGaAs/GaAs quantum well structures by molecular beam epitaxy
[作者:Swe, NC; Tangmattajittakul, O; Suraprapapich, S; Changmoang, P; Thainoi, S; Wissawinthanon, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S,期刊:Journal Of Vacuum Science & Technology B, 页码:1100-1104 , 文章类型: Article,,卷期:2008年26-3]
- Self-assembled, multistack InAs quantum dot molecules (QDMs) were grown by a modified molecular beam epitaxial (MBE) technique, which involves multiple stacking and multiple cycling of the thin-capping-and-regrowth proce...
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