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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共65条记录   Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures [作者：Timm, R; Lenz, A; Eisele, H; Ivanova, L; Dahne, M; Balakrishnan, G; Huffaker, DL; Farrer, I; Ritchie, DA,期刊：Journal Of Vacuum Science & Technology B, 页码：1492-1503 , 文章类型： Article，,卷期：2008年26-4] GaSb quantum rings in GaAs were studied by cross-sectional scanning tunneling microscopy. The quantum rings have an outer shape of a truncated pyramid with typical lateral extensions between 10 and 30 nm and heights betw... Basal plane dislocation reduction for 8 degrees off-cut, 4H-SiC using in situ variable temperature growth interruptions [作者：VanMil, BL; Stahlbush, RE; Myers-Ward, RL; Lew, KK; Eddy, CR; Gaskill, DK,期刊：Journal Of Vacuum Science & Technology B, 页码：1504-1507 , 文章类型： Article，,卷期：2008年26-4] In situ growth interrupts were executed during the growth of 8 degrees off-cut 4H-SiC epitaxial layers to determine the dependence of the efficiency for converting basal plane dislocations (BPDs) to threading edge disloc... Interaction of microwaves with photoelectrons in semiconductors [作者：Ahrenkiel, RK; Johnston, SW,期刊：Journal Of Vacuum Science & Technology B, 页码：1508-1515 , 文章类型： Article，,卷期：2008年26-4] Microwave photoconductive decay is widely used to measure the recombination lifetime in semiconductors and is generally considered to be a low-injection technique. Here, the authors examine the technique in detail from b... As-rich InAs(001)-(2x4) phases investigated by in situ surface x-ray diffraction [作者：Tinkham, BP; Braun, W; Ploog, KH; Takahasi, M; Mizuki, J; Grosse, F,期刊：Journal Of Vacuum Science & Technology B, 页码：1516-1520 , 文章类型： Article，,卷期：2008年26-4] Surface x-ray diffraction has been employed, in situ, to measure InAs(001)-(2x4) surface phases under technologically relevant growth conditions. For the As-rich (2x4) phase, the authors obtain good agreement between the... Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix [作者：Yoshikawa, A; Che, SB; Hashimoto, N; Saito, H; Ishitani, Y; Wang, XQ,期刊：Journal Of Vacuum Science & Technology B, 页码：1551-1559 , 文章类型： Article，,卷期：2008年26-4] The authors propose and demonstrate fine structure novel InN/GaN multiple quantum wells (MQWs) consisting of ultimately thin InN wells around 1 ML inserted in a GaN matrix grown under In-polarity growth regime by molecul... Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate [作者：Liang, D; Bowers, JE,期刊：Journal Of Vacuum Science & Technology B, 页码：1560-1568 , 文章类型： Article，,卷期：2008年26-4] The authors report a highly efficient design for low-temperature, void-free InP-to-silicon direct wafer bonding on a silicon-on-insulator (SOI) substrate. By etching an array of small through holes in the top silicon lay... Admittance study of GaAs high-k metal-insulator-semiconductor capacitors with Si interface control layer [作者：Akazawa, M; Hasegawa, H,期刊：Journal Of Vacuum Science & Technology B, 页码：1569-1578 , 文章类型： Article，,卷期：2008年26-4] Admittance behavior of high-k GaAs metal-insulator-semiconductor (MIS) capacitors having an ultrathin SiNx/Si interface control double layer has been investigated in detail. The measured admittance showed characteristic ... Nickel and nickel silicide Schottky barrier contacts to n-type silicon nanowires [作者：Woodruff, SM; Dellas, NS; Liu, BZ; Eichfeld, SM; Mayer, TS; Redwing, JM; Mohney, SE,期刊：Journal Of Vacuum Science & Technology B, 页码：1592-1596 , 文章类型： Article，,卷期：2008年26-4] Schottky contacts to n-type silicon nanowires were fabricated using Ni or nickel silicide contacts in a wraparound or end contact geometry, respectively. Series resistance in the test structures was reduced by heavily do... Au/Ag and Au/Pd molecular contacts to GaAs [作者：Ahktari-Zavareh, A; Li, WJ; Kavanagh, KL; Trionfi, AJ; Jones, JC; Reno, JL; Hsu, JWP; Talin, AA,期刊：Journal Of Vacuum Science & Technology B, 页码：1597-1601 , 文章类型： Article，,卷期：2008年26-4] The hot electron transport through Au/Pd or Au/Ag/molecular layer/n-GaAs diodes has been studied by using ballistic electron emission microscopy (BEEM). The monolayers consisted of either octanedithiol (HS-(CH2)(8)-SH) o... Atomic force microscopy and scanning tunneling microscopy-spectroscopy characterization of ZnO nanobelts [作者：Maffeis, TGG; Penny, MW; Brown, MR; Liew, KW; Fu, D; Tsolakoglou, N; Wright, CJ; Wilks, SP,期刊：Journal Of Vacuum Science & Technology B, 页码：1606-1608 , 文章类型： Article，,卷期：2008年26-4] The surface properties of ZnO nanobelts grown by chemical vapor deposition were investigated by tapping mode atomic force microscopy (AFM) and scanning tunneling microscopy (STM). AFM images showed a type 1 (high aspect ... Tunable double dots and Kondo enhanced Andreev transport in InAs nanowires [作者：Sand-Jespersen, T; Aagesen, M; Sorensen, CB; Lindelof, PE; Nygard, J,期刊：Journal Of Vacuum Science & Technology B, 页码：1609-1612 , 文章类型： Article，,卷期：2008年26-4] The effect of Kondo correlations on the subgap structure of a quantum dot contacted by superconducting leads is investigated experimentally in indium-arsenide nanowires. When the zero-bias Kondo effect is suppressed by t... Other one-dimensional systems and thermal properties [作者：Dresselhaus, MS; Dresselhaus, G; Hofmann, M,期刊：Journal Of Vacuum Science & Technology B, 页码：1613-1618 , 文章类型： Article，,卷期：2008年26-4] Since the ICON 2007 conference was heavily focused on nanowires, one session was devoted to providing a broader picture of one-dimensional systems and how thermal properties are enhanced in these low-dimensional systems.... Ion beam synthesis of Ni nanoparticles embedded in quartz [作者：Kumar, P; Kumar, R; Kanjilal, D; Knobel, M; Thakur, P; Chae, KH,期刊：Journal Of Vacuum Science & Technology B, 页码：L36-L40 , 文章类型： Letter，,卷期：2008年26-4] Fabrication and fluence dependent growth of Ni nanoparticles in quartz matrix using a low energy ion implantation followed by thermal annealing are reported. 100 keV Ni ions are implanted (at room temperature) in quartz ... Gas-assisted focused electron beam and ion beam processing and fabrication [作者：Utke, I; Hoffmann, P; Melngailis, J,期刊：Journal Of Vacuum Science & Technology B, 页码：1197-1276 , 文章类型： Review，,卷期：2008年26-4] Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent d... Interface structure and transport of complex oxide junctions [作者：Nelson-Cheeseman, BB; Wong, F; Chopdekar, RV; Chi, M; Arenholz, E; Browning, ND; Suzuki, Y,期刊：Journal Of Vacuum Science & Technology B, 页码：1521-1525 , 文章类型： Article，,卷期：2008年26-4] The interface structure and magnetism of hybrid magnetic tunnel junction-spin filter devices have been investigated and correlated with their transport properties. Magnetic tunnel junctions made of a spinel NiMn2O4 tunne... Atomic scale dielectric constant near the SiO2/Si(001) interface [作者：Wakui, S; Nakamura, J; Natori, A,期刊：Journal Of Vacuum Science & Technology B, 页码：1579-1584 , 文章类型： Article，,卷期：2008年26-4] The authors evaluated the local dielectric constant for the ultrathin beta-quartz (0001) films and the ideal quartz/Si(001) interface and studied the effect of oxygen vacancy on the local dielectric constant, using first...