- Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping
[作者:Park, JS; Curtin, M; Hydrick, JM; Carroll, M; Fiorenza, JG; Lochtefeld, A; Novak, S,期刊:Journal Of Vacuum Science & Technology B, 页码:1740-1744 , 文章类型: Article,,卷期:2008年26-5]
- The authors investigate growth behavior, morphology, and doping of Ge grown selectively on silicon in submicron SiO2 trenches, in comparison with growth on blanket Si. Based on the surface morphology of Ge in trenches, i...
- Large areas of periodic nanoholes perforated in multistacked films produced by lift-off
[作者:Wu, W; Dey, D; Katsnelson, A; Memis, OG; Mohseni, H,期刊:Journal Of Vacuum Science & Technology B, 页码:1745-1747 , 文章类型: Article,,卷期:2008年26-5]
- The authors report a low-cost and high-throughput method-nanosphere photolithography, for generating periodic subwavelength holes in metals/dielectrics. By combining the self-assembled and focus properties of micro-/nano...
- Self-aligned metal-contact and passivation technique for submicron ridge waveguide laser fabrication
[作者:Teng, JH; Lim, EL; Chua, SJ; Ang, SS; Chong, LF; Dong, JR; Yin, R,期刊:Journal Of Vacuum Science & Technology B, 页码:1748-1752 , 文章类型: Article,,卷期:2008年26-5]
- One challenge in fabricating submicron ridge waveguide photonic devices is the formation of metal contacts and passivation. In this article, the authors report a self-aligned metal-contact and passivation technique suita...
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