- Boron impurity at the Si/SiO2 interface in SOI wafers and consequences for piezoresistive MEMS devices - art. no. 015034
[作者:Nafari, A; Karlen, D; Rusu, C; Svensson, K; Enoksson, P,期刊:Journal of Micromechanics and Microengineering, 页码:15034-15034 , 文章类型: Article,,卷期:2009年19-1]
- In this work, the electrical performance of piezoresistive devices fabricated on thinned SOI wafers has been investigated. Specifically, SOI wafers manufactured with the standard bond-and-etch back method (BESOI), common...
- Low-temperature bonding of poly-(methyl methacrylate) microfluidic devices under an ultrasonic field - art. no. 015035
[作者:Li, SW; Xu, JH; Wang, YJ; Lu, YC; Luo, GS,期刊:Journal of Micromechanics and Microengineering, 页码:15035-15035 , 文章类型: Article,,卷期:2009年19-1]
- High bond strength at low temperature without shape distortion is a major goal in microfluidic device fabrication. In this paper, we present a new easy bonding method for poly-(methyl methacrylate) ( PMMA) microdevices a...
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