- Externally triggered on-demand drug release and deep tumor penetration
[作者：Kong, SD; Zhang, WZ; Lee, JH; Choi, C; Khamwannah, J; Karin, M; Jin, SH,期刊：Journal Of Vacuum Science & Technology B, 页码：02C102-02C102 , 文章类型： Article，,卷期：2012年30-2]
- Hollow-sphere-shaped nanocapsules containing intentionally inserted magnetic nanoparticles and predefined anticancer drugs provide a powerful magnetic vector under moderate gradient magnetic fields. They enable the nanoc...
- Electrical properties and radiation detector performance of free-standing bulk n-GaN
[作者：Lee, IH; Polyakov, AY; Smirnov, NB; Govorkov, AV; Kozhukhova, EA; Zaletin, VM; Gazizov, IM; Kolin, NG; Pearton, SJ,期刊：Journal Of Vacuum Science & Technology B, 页码：21205-21205 , 文章类型： Article，,卷期：2012年30-2]
- Electrical properties and deep electron and hole trap spectra were measured for undoped n-GaN cut from a thick boule grown by hydride vapor phase epitaxy (HVPE). The material is characterized by a very low concentration ...
- InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
[作者：Lin, CA; Huang, ML; Chiu, PC; Lin, HK; Chyi, JI; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; Kwo, J; Hong, M,期刊：Journal Of Vacuum Science & Technology B, 页码：02B118-02B118 , 文章类型： Article，,卷期：2012年30-2]
- InAs MOS devices passivated with molecular beam epitaxy (MBE)-grown Gd2O3 2-3 monolayers thick followed by an Al2O3 cap have demonstrated excellent electrical performances and interfacial properties. Band offset energies...
- Process effects of copper film over a step etched with a plasma-based process
[作者：Lin, CC; Kuo, Y,期刊：Journal Of Vacuum Science & Technology B, 页码：21204-21204 , 文章类型： Article，,卷期：2012年30-2]
- The additive gas effect of a new plasma-based process for etching the copper film over a dielectric step has been investigated. The addition of different gases, such as Ar, N-2, and CF4, affected the copper vertical and ...
- Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substrates
[作者：Liu, XY; Smith, DJ; Cao, HL; Chen, YP; Fan, J; Zhang, YH; Pimpinella, RE; Dobrowolska, M; Furdyna, JK,期刊：Journal Of Vacuum Science & Technology B, 页码：02B103-02B103 , 文章类型： Article，,卷期：2012年30-2]
- Films of pseudohexagonal Bi(T)(2)e(3), Bi2Se3 and their alloys were successfully grown by molecular beam epitaxy on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated b...
- Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy
[作者：Luna, E; Hey, R; Trampert, A,期刊：Journal Of Vacuum Science & Technology B, 页码：02B108-02B108 , 文章类型： Article，,卷期：2012年30-2]
- (In,Ga)As/GaAs quantum wells (QWs) are successfully fabricated via a thermally induced structural transition from deposited amorphous material to epitaxial films, also known as solid-phase epitaxy (SPE). Although exact p...
- Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaN
[作者：Magdenko, L; Patriarche, G; Troadec, D; Mauguin, O; Morvan, E; di Forte-Poisson, MA; Pantzas, K; Ougazzaden, A; Martinez, A; Ramdane, A,期刊：Journal Of Vacuum Science & Technology B, 页码：22205-22205 , 文章类型： Article，,卷期：2012年30-2]
- Detailed investigation of Ohmic Cr/Ni/Au based contact formation to p-GaN was realized by scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy and compared to the Cr/Au bilayer metallization...
- Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 x 8) surface
[作者：Martin, AJ; Saucer, TW; Sun, K; Kim, SJ; Ran, G; Rodriguez, GV; Pan, XQ; Sih, V; Millunchick, J,期刊：Journal Of Vacuum Science & Technology B, 页码：02B112-02B112 , 文章类型： Article，,卷期：2012年30-2]
- Multilayer and single layer GaSb/GaAs(001) quantum dot structures were grown on an Sb-terminated (2 x 8) surface reconstruction and compared to those grown on an As-terminated (2 x 4) surface reconstruction. Uncapped qua...
- Comparison of tunnel junctions for cascaded InAs/GaSb superlattice light emitting diodes
[作者：Murray, LM; Norton, DT; Olesberg, JT; Boggess, TF; Prineas, JP,期刊：Journal Of Vacuum Science & Technology B, 页码：21203-21203 , 文章类型： Article，,卷期：2012年30-2]
- Tunnel junctions in cascaded structures must provide adequate barriers to prevent carriers from leaking from one emission region to the next without first recombining radiatively, while at the same time remain low in tun...
- Application of GaInNAs for the gain medium of a photonic crystal microcavity
[作者：Nagatomo, H; Kukita, K; Goto, H; Nakao, R; Nakano, K; Ishikawa, F; Morifuji, M; Kondow, M,期刊：Journal Of Vacuum Science & Technology B, 页码：02B127-02B127 , 文章类型： Article，,卷期：2012年30-2]
- The authors demonstrated the functionality of a circularly arranged submicron scale optical cavity with a GaInNAs gain medium and an AlOx cladding layer within a two-dimensional photonic crystal slab. The GaInNAs gain ha...
- Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy
[作者：Ouyang, L; Steenbergen, EH; Zhang, YH; Nunna, K; Huffaker, DL; Smith, DJ,期刊：Journal Of Vacuum Science & Technology B, 页码：02B106-02B106 , 文章类型： Article，,卷期：2012年30-2]
- Strain-balanced InAs/InAs1-xSbx type-II superlattices (SLs) have been proposed for possible long-wavelength infrared applications. This paper reports a detailed structural characterization study of InAs/InAs1-xSbx SLs wi...
- Influence of hydrogen on the thermionic electron emission from nitrogen-incorporated polycrystalline diamond films
[作者：Paxton, WF; Howell, M; Kang, WP; Davidson, JL,期刊：Journal Of Vacuum Science & Technology B, 页码：21202-21202 , 文章类型： Article，,卷期：2012年30-2]
- Although hydrogen has been shown to enhance the thermionic emission properties of nitrogen-incorporated diamond cathodes, the effect diminishes when these cathodes are heated to temperatures in excess of 700 degrees C, p...
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