- GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
[作者:Smakman, EP; Garleff, JK; Young, RJ; Hayne, M; Rambabu, P; Koenraad, PM,期刊:Applied Physics Letters, 页码:142116-142116 , 文章类型: Article,,卷期:2012年100-14]
- We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relax...
- Highly ionized physical vapor deposition plasma source working at very low pressure
[作者:Stranak, V; Herrendorf, AP; Drache, S; Cada, M; Hubicka, Z; Tichy, M; Hippler, R,期刊:Applied Physics Letters, 页码:141604-141604 , 文章类型: Article,,卷期:2012年100-14]
- Highly ionized discharge for physical vapor deposition at very low pressure is presented in the paper. The discharge is generated by electron cyclotron wave resonance (ECWR) which assists with ignition of high power impu...
- Ultrafast excited state dynamics and dispersion studies of nonlinear optical properties in dinaphthoporphycenes
[作者:Swain, D; Anusha, PT; Prashant, TS; Tewari, SP; Sarma, T; Panda, PK; Rao, SV,期刊:Applied Physics Letters, 页码:141109-141109 , 文章类型: Article,,卷期:2012年100-14]
- Ultrafast excited state dynamics of dinaphthoporphycenes were investigated using femtosecond and picosecond degenerate pump-probe techniques at 600 nm and 800 nm, respectively. Femtosecond pump-probe data indicated photo...
- Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer
[作者:Trinh, TT; Nguyen, VD; Nguyen, HH; Jang, J; Jang, K; Baek, K; Dao, VA; Yi, J,期刊:Applied Physics Letters, 页码:143502-143502 , 文章类型: Article,,卷期:2012年100-14]
- Influence of Schottky contact between source/drain electrodes and high conductivity a-InGaZnO active layer to the performance of nonvolatile memory devices was first proposed. The Schottky barrier devices faced to the di...
- Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions
[作者:Thoan, NH; Jivanescu, M; O'Sullivan, BJ; Pantisano, L; Gordon, I; Afanas'ev, VV; Stesmans, A,期刊:Applied Physics Letters, 页码:142101-142101 , 文章类型: Article,,卷期:2012年100-14]
- Low-temperature (77 K) capacitance-voltage measurements are proposed as a technique to quantify the densities of traps in c-Si/a-Si:H heterojunction solar cell structures. By comparing the inferred trap densities to the ...
- Automated markerless full field hard x-ray microscopic tomography at sub-50 nm 3-dimension spatial resolution
[作者:Wang, J; Chen, YCK; Yuan, QX; Tkachuk, A; Erdonmez, C; Hornberger, B; Feser, M,期刊:Applied Physics Letters, 页码:143107-143107 , 文章类型: Article,,卷期:2012年100-14]
- A full field transmission x-ray microscope (TXM) has been developed and commissioned at the National Synchrotron Light Source at Brookhaven National Laboratory. The capabilities we developed in auto-tomography, local tom...
- Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride
[作者:Wang, SL; Liu, HX; Gao, B; Cai, HM,期刊:Applied Physics Letters, 页码:142105-142105 , 文章类型: Article,,卷期:2012年100-14]
- This paper presents the theoretical analysis of the diffusivity of electrons in wurtzite (WZ) indium nitride (InN) using an ensemble Monte Carlo (EMC) method. The electron diffusion coefficient D(E,d,omega) as the functi...
- Free carrier accumulation at cubic AlGaN/GaN heterojunctions
[作者:Wei, QY; Li, T; Huang, JY; Ponce, FA; Tschumak, E; Zado, A; As, DJ,期刊:Applied Physics Letters, 页码:142108-142108 , 文章类型: Article,,卷期:2012年100-14]
- Cubic Al0.3Ga0.7N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained usin...
- Few electron double quantum dot in an isotopically purified Si-28 quantum well
[作者:Wild, A; Kierig, J; Sailer, J; Ager, JW; Haller, EE; Abstreiter, G; Ludwig, S; Bougeard, D,期刊:Applied Physics Letters, 页码:143110-143110 , 文章类型: Article,,卷期:2012年100-14]
- We present a few electron double quantum dot device defined in an isotopically purified Si-28 quantum well (QW). An electron mobility of 5.5 . 10(4)cm(2)(Vs)(-1) is observed in the QW, which is the highest mobility ever ...
- Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure
[作者:Wu, PH; Dumcenco, D; Huang, YS; Hsu, HP; Lai, CH; Lin, TY; Chrastina, D; Isella, G; Gatti, E; Tiong, KK,期刊:Applied Physics Letters, 页码:141905-141905 , 文章类型: Article,,卷期:2012年100-14]
- Photoluminescence (PL) of a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well (MQW) structure was studied above room temperature, in the range of 300-440 K. Both direct and indirect radiative recombination PL feat...
- Production of high-density high-temperature plasma by collapsing small solid-density plasma shell with two ultra-intense laser pulses
[作者:Xu, H; Yu, W; Yu, MY; Wong, AY; Sheng, ZM; Murakami, M; Zhang, J,期刊:Applied Physics Letters, 页码:144101-144101 , 文章类型: Article,,卷期:2012年100-14]
- Three-dimensional particle-in-cell simulations show that the anisotropic collapse of a plasma microshell by impact of two oppositely directed intense laser pulses can create at the center of the shell cavity a submicron-...
- The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals
[作者:Yang, XB; Fujiwara, K; Abrosimov, NV; Gotoh, R; Nozawa, J; Koizumi, H; Kwasniewski, A; Uda, S,期刊:Applied Physics Letters, 页码:141601-141601 , 文章类型: Article,,卷期:2012年100-14]
- Crystal-melt interface morphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V-c) for the interf...
- Enhancement-mode nanowire (nanobelt) field-effect-transistors with Schottky-contact source and drain electrodes
[作者:Yu, B; Ye, Y; Wu, PC; Dai, Y; Zhang, H; Dai, L,期刊:Applied Physics Letters, 页码:143509-143509 , 文章类型: Article,,卷期:2012年100-14]
- Enhancement-mode (E-mode) field-effect-transistors (FETs) have advantages in making high-speed and low power consumption devices. However, most reported nano-FETs work in the depletion-mode, because E-mode nano-FETs are ...
- Observation of the photoinduced anomalous Hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature
[作者:Yu, JL; Chen, YH; Jiang, CY; Liu, Y; Ma, H; Zhu, LP,期刊:Applied Physics Letters, 页码:142109-142109 , 文章类型: Article,,卷期:2012年100-14]
- The photocurrent spectra of inter-band photoinduced anomalous Hall effect (AHE) in insulating InGaAs/AlGaAs quantum wells have been observed at room temperature. The AHE current changes linearly with longitudinal electri...
- Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors
[作者:Yuan, Z; Nainani, A; Bennett, BR; Boos, JB; Ancona, MG; Saraswat, KC,期刊:Applied Physics Letters, 页码:143503-143503 , 文章类型: Article,,卷期:2012年100-14]
- Performance degradation due to interfacial traps is generally considered as one of the main challenges for III-V metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this work, we have investigated the suppre...
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