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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共90条记录   n-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition - art. no. 041117 [作者：Kang, H; Park, J; Choi, T; Jung, H; Lee, KH; Im, S; Kim, H,期刊：Applied Physics Letters, 页码：41117-41117 , 文章类型： Article，,卷期：2012年100-4] Core-shell p-n junction diode was fabricated using the atomic layer deposition (ALD) of ZnO on p-Si nanowire (NW) array prepared by electroless etching method. I-V measurements have shown that the carrier concentrations ... Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers - art. no. 042102 [作者：Mahadik, NA; Stahlbush, RE; Ancona, MG; Imhoff, EA; Hobart, KD; Myers-Ward, RL; Eddy, CR; Gaskill, DK; Kub, FJ,期刊：Applied Physics Letters, 页码：42102-42102 , 文章类型： Article，,卷期：2012年100-4] Stacking fault (SF) expansion from basal plane dislocations (BPDs) confined in highly doped 4H-SiC buffer layers is observed under high-power ultraviolet illumination (>1000 W/cm(2)). Once the SFs reach the active drift ... Temperature dependence of microwave voltage emission associated to spin-transfer induced vortex oscillation in magnetic tunnel junction - art. no. 042408 [作者：Bortolotti, P; Dussaux, A; Grollier, J; Cros, V; Fukushima, A; Kubota, H; Yakushiji, K; Yuasa, S; Ando, K; Fert, A,期刊：Applied Physics Letters, 页码：42408-42408 , 文章类型： Article，,卷期：2012年100-4] The temperature dependence of a vortex-based nano-oscillator induced by spin transfer torque (STVO) in magnetic tunnel junctions (MTJ) is considered. We obtain emitted signals with large output power and good signal cohe... Decreasing high ion energy during transition in pulsed inductively coupled plasmas - art. no. 044105 [作者：Agarwal, A; Stout, PJ; Banna, S; Rauf, S; Collins, K,期刊：Applied Physics Letters, 页码：44105-44105 , 文章类型： Article，,卷期：2012年100-4] Pulsed RF plasmas sustained in electronegative gas mixtures are increasingly being employed for plasma etching at future technological nodes. During the plasma transition from the afterglow to the active-glow, ion energi... Growth sector dependence and mechanism of stress formation in epitaxial diamond growth - art. no. 041906 [作者：Fischer, M; Gsell, S; Schreck, M; Bergmaier, A,期刊：Applied Physics Letters, 页码：41906-41906 , 文章类型： Article，,卷期：2012年100-4] Stress generation in epitaxial diamond growth was investigated by l-Raman spectroscopy and high resolution x-ray diffraction. Intrinsic stress could be varied systematically from compressive to tensile covering a huge ra... Optical planar waveguide for cell counting - art. no. 043701 [作者：LeBlanc, J; Mueller, AJ; Prinz, A; Butte, MJ,期刊：Applied Physics Letters, 页码：43701-43701 , 文章类型： Article，,卷期：2012年100-4] Low cost counting of cells has medical applications in screening, military medicine, disaster medicine, and rural healthcare. In this report, we present a shallow, buried, planar waveguide fabricated by potassium ion exc... Origin of the enhanced polarization in La and Mg co-substituted BiFeO3 thin film during the fatigue process - art. no. 042902 [作者：Ke, QQ; Kumar, A; Lou, XJ; Zeng, KY; Wang, J,期刊：Applied Physics Letters, 页码：42902-42902 , 文章类型： Article，,卷期：2012年100-4] We have studied the polarization fatigue of La and Mg co-substituted BiFeO3 thin film, where a polarization peak is observed during the fatigue process. The origin of such anomalous behavior is analyzed on the basis of t... The bound states of Fe impurity in wurtzite GaN - art. no. 041904 [作者：Zhang, M; Zhou, TF; Zhang, YM; Li, B; Zheng, SN; Huang, J; Sun, YP; Ren, GQ; Wang, JF; Xu, K; Yang, H,期刊：Applied Physics Letters, 页码：41904-41904 , 文章类型： Article，,卷期：2012年100-4] A study on the bound states of Fe impurities in GaN by ultraviolet photoluminescence (PL) emissions is presented. Two elusive PL lines were observed at 3.463 eV (L1) and 3.447 eV (L2), respectively. The intensities of th... High magnetic field annealing effect on visible photoluminescence enhancement of TiO2 nanotube arrays - art. no. 043106 [作者：Yang, MJ; Liu, W; Sun, JL; Zhu, JL,期刊：Applied Physics Letters, 页码：43106-43106 , 文章类型： Article，,卷期：2012年100-4] TiO2 nanotube arrays with remarkable visible photoluminescence were prepared by high magnetic field annealing in air at 450 degrees C due to the involvement of oxygen vacancies (OVs). A field with the intensities of 0, 2... Parabolic tapered photonic crystal cavity in silicon - art. no. 041112 [作者：Desiatov, B; Goykhman, I; Levy, U,期刊：Applied Physics Letters, 页码：41112-41112 , 文章类型： Article，,卷期：2012年100-4] We demonstrate the design, fabrication, transmission spectrum measurement, and near-field characterization of a parabolic tapered one-dimensional photonic crystal cavity in silicon. The results shows a relatively high qu... The influence of Al composition on point defect incorporation in AlGaN - art. no. 043509 [作者：Henry, TA; Armstrong, A; Allerman, AA; Crawford, MH,期刊：Applied Physics Letters, 页码：43509-43509 , 文章类型： Article，,卷期：2012年100-4] The effects of point defects in AlxGa1-xN (x=0-0.33) films with similar threading dislocation densities were investigated. The epitaxial layers were grown under conditions applicable to laser-diode quantum wells, barrier... High-temperature thermoelectric properties of Cu1-xInTe2 with a chalcopyrite structure - art. no. 042108 [作者：Kosuga, A; Plirdpring, T; Higashine, R; Matsuzawa, M; Kurosaki, K; Yamanaka, S,期刊：Applied Physics Letters, 页码：42108-42108 , 文章类型： Article，,卷期：2012年100-4] We investigated the high-temperature thermoelectric properties of Cu1-xInTe2 (x=0, 0.05, 0.1, 0.2) at 310-710K. The electrical properties of this system were optimized by the presence of substoichiometric amounts of copp... Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers - art. no. 041905 [作者：Hsu, HP; Wu, PH; Huang, YS; Chrastina, D; Isella, G; von Kanel, H; Tiong, KK,期刊：Applied Physics Letters, 页码：41905-41905 , 文章类型： Article，,卷期：2012年100-4] Photoreflectance (PR) was used to study the direct-gap interband transitions in strain-compensated Ge/SiGe multiple quantum well (MQW) structures with Ge-rich SiGe barriers grown by low-energy plasma-enhanced chemical va... Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO - art. no. 042107 [作者：Zhang, Z; Knutsen, KE; Merz, T; Kuznetsov, AY; Svensson, BG; Brillson, LJ,期刊：Applied Physics Letters, 页码：42107-42107 , 文章类型： Article，,卷期：2012年100-4] We used depth-resolved cathodoluminescence spectroscopy (DRCLS) to describe the strong dependence of Li acceptor formation on thermal treatment in Li-doped ZnO. Within a 500-600 degrees C annealing temperature range, sub... Time-dynamics of the two-color emission from vertical-external-cavity surface-emitting lasers - art. no. 041114 [作者：Chernikov, A; Wichmann, M; Shakfa, MK; Scheller, M; Moloney, JV; Koch, SW; Koch, M,期刊：Applied Physics Letters, 页码：41114-41114 , 文章类型： Article，,卷期：2012年100-4] The temporal stability of a two-color vertical-external-cavity surface-emitting laser is studied using single-shot streak-camera measurements. The collected data is evaluated via quantitative statistical analysis schemes... Direct imaging of both ferroelectric and antiferromagnetic domains in multiferroic BiFeO3 single crystal using x-ray photoemission electron microscopy - art. no. 042406 [作者：Moubah, R; Elzo, M; El Moussaoui, S; Colson, D; Jaouen, N; Belkhou, R; Viret, M,期刊：Applied Physics Letters, 页码：42406-42406 , 文章类型： Article，,卷期：2012年100-4] In this work, we propose to study the magnetic and ferroelectric configurations in ferroelectric multidomain BiFeO3 single crystals. Using x-ray (magnetic) linear dichroism in a photoemission electron microscope (X-PEEM)...