- Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors - art. no. 060603
[作者:Liu, L; Ren, F; Pearton, SJ; Fitch, RC; Walker, DE; Chabak, KD; Gillespie, JK; Kossler, M; Trejo, M; Via, D; Crespo, A,期刊:Journal Of Vacuum Science & Technology B, 页码:60603-60603 , 文章类型: Article,,卷期:2011年29-6]
- The temperature dependence of sub-threshold drain current versus gate voltage at a constant drain bias voltage were used to determine the trap densities in AlGaN/GaN high electron mobility transistors (HEMTs) before and ...
- Semiconductor nanopores formed by chemical vapor deposition of heteroepitaxial SiC films on SOI(100) substrates - art. no. 062001
[作者:Ikoma, Y; Yahaya, H; Kuriyama, K; Sakita, H; Nishino, Y; Motooka, T,期刊:Journal Of Vacuum Science & Technology B, 页码:62001-62001 , 文章类型: Article,,卷期:2011年29-6]
- The authors investigated the formation of nanometer-scale pore (nanopore) arrays by chemical vapor deposition (CVD) of heteroepitaxial SiC films on Si(100) membranes prepared by anisotropic etching of silicon on insulato...
- Probe field enhancement in photonic crystals by upconversion nanoparticles - art. no. 06F403
[作者:Zhang, JY; Pick, TE; Gargas, D; Dhuey, S; Chan, EM; Wu, Y; Liang, XG; Schuck, PJ; Olynick, DL; Helms, BA; Cabrini, S,期刊:Journal Of Vacuum Science & Technology B, 页码:F6403-F6403 , 文章类型: Article,,卷期:2011年29-6]
- Lanthanide-doped upconverting nanoparticles, converting low frequency light to high frequency light through a multiphoton process, have shown interesting properties for bioimaging. Here, the authors describe a method to ...
- Room temperature nanoimprinting using spin-coated hydrogen silsesquioxane with high boiling point solvent - art. no. 06FC03
[作者:Kang, Y; Okada, M; Omoto, S; Haruyama, Y; Kanda, K; Matsui, S,期刊:Journal Of Vacuum Science & Technology B, 页码:FC603-FC603 , 文章类型: Article,,卷期:2011年29-6]
- The authors have previously used two methods for nanoimprinting hydrogen silsesquioxane (HSQ) patterns. In the casting method, the HSQ pattern was replicated at a low imprinting pressure of less than 1 MPa, however, the ...
- Towards an all-track 300 mm process for directed self-assembly - art. no. 06F203
[作者:Liu, CC; Thode, CJ; Delgadillo, PAR; Craig, GSW; Nealey, PF; Gronheid, R,期刊:Journal Of Vacuum Science & Technology B, 页码:F6203-F6203 , 文章类型: Article,,卷期:2011年29-6]
- This study modifies the authors' previously reported directed self-assembly (DSA) process of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) in order to meet the throughput and material-related requirements of a ...
- Pulsed helium ion beam induced deposition: A means to high growth rates - art. no. 06FG05
[作者:Alkemade, PFA; Miro, H; van Veldhoven, E; Maas, DJ; Smith, DA; Rack, PD,期刊:Journal Of Vacuum Science & Technology B, 页码:FG605-FG605 , 文章类型: Article,,卷期:2011年29-6]
- The sub-nanometer beam of a helium ion microscope was used to study and optimize helium-ion beam induced deposition of PtC nanopillars with the (CH3)(3)Pt(CPCH3) precursor. The beam current, beam dwell time, precursor re...
- Suspended, micron-scale corner cube retroreflectors as ultra-bright optical labels - art. no. 06FA01
[作者:Sherlock, T; Nasrullah, A; Litvinov, J; Cacao, E; Knoop, J; Kemper, S; Kourentzi, K; Kar, A; Ruchhoeft, P; Willson, R,期刊:Journal Of Vacuum Science & Technology B, 页码:FA601-FA601 , 文章类型: Article,,卷期:2011年29-6]
- Corner cube retroreflectors are objects with three mutually perpendicular reflective surfaces that return light directly to its source and are therefore extremely bright and easy to detect. In this work, we have fabricat...
- Review Article: Rare-earth monosulfides as durable and efficient cold cathodes - art. no. 06F602
[作者:Cahay, M; Boolchand, P; Fairchild, SB; Grazulis, L; Murray, PT; Back, TC; Semet, V; Binh, VT; Wu, XH; Poitras, D; Lockwood, DJ; Yu, F; Kuppa, V,期刊:Journal Of Vacuum Science & Technology B, 页码:F6602-F6602 , 文章类型: Review,,卷期:2011年29-6]
- In their rocksalt structure, rare-earth monosulfides offer a more stable alternative to alkali metals to attain low or negative electron affinity when deposited on various III-V and II-VI semiconductor surfaces. In this ...
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