- Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices - art. no. 232902
[作者:Ahn, J; Geppert, I; Gunji, M; Holland, M; Thayne, I; Eizenberg, M; McIntyre, PC,期刊:Applied Physics Letters, 页码:32902-32902 , 文章类型: Article,,卷期:2011年99-23]
- We describe the electrical properties of atomic layer deposited TiO2/Al2O3 bilayer gate oxides which simultaneously achieve high gate capacitance density and low gate leakage current density. Crystallization of the initi...
- Suppression of vacancy defects in epitaxial La-doped SrTiO3 films - art. no. 232905
[作者:Keeble, DJ; Jalan, B; Ravelli, L; Egger, W; Kanda, G; Stemmer, S,期刊:Applied Physics Letters, 页码:32905-32905 , 文章类型: Article,,卷期:2011年99-23]
- Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy clus...
- Surface effects in a semiconductor photonic nanowire and spectral stability of an embedded single quantum dot - art. no. 233106
[作者:Yeo, I; Malik, NS; Munsch, M; Dupuy, E; Bleuse, J; Niquet, YM; Gerard, JM; Claudon, J; Wagner, E; Seidelin, S; Auffeves, A; Poizat, JP; Nogues, G,期刊:Applied Physics Letters, 页码:33106-33106 , 文章类型: Article,,卷期:2011年99-23]
- We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an o...
- Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures - art. no. 233508
[作者:Kornblum, L; Paska, Y; Rothschild, JA; Haick, H; Eizenberg, M,期刊:Applied Physics Letters, 页码:33508-33508 , 文章类型: Article,,卷期:2011年99-23]
- A method is proposed for characterization of the electrostatics of self-assembled monolayers (SAMs). The method is based on the extraction of the metal's effective work function in metal-oxide-semiconductor capacitors, w...
- Surface enhanced Raman scattering of aged graphene: Effects of annealing in vacuum - art. no. 233103
[作者:Wang, YY; Ni, ZH; Li, AZ; Zafar, Z; Zhang, Y; Ni, ZH; Qu, SL; Qiu, T; Yu, T; Shen, ZX,期刊:Applied Physics Letters, 页码:33103-33103 , 文章类型: Article,,卷期:2011年99-23]
- In this paper, we report a simple method to recover the surface enhanced Raman scattering activity of aged graphene. The Raman signals of Rhodamine molecules absorbed on aged graphene are dramatically increased after vac...
- Transient capacitance of light-emitting electrochemical cells - art. no. 233306
[作者:Davis, YA; Crooker, PP; Haegel, NM; Yoshioka, Y; MacKenzie, JD,期刊:Applied Physics Letters, 页码:33306-33306 , 文章类型: Article,,卷期:2011年99-23]
- We present time-dependent measurements of the capacitance, current, and optical emission of light-emitting electrochemical cells as a constant voltage bias is applied and removed. We find that the capacitance increases m...
- Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes - art. no. 233507
[作者:Gobato, YG; Galeti, HVA; dos Santos, LF; Lopez-Richard, V; Cesar, DF; Marques, GE; Brasil, MJSP; Orlita, M; Kunc, J; Maude, DK; Henini, M; Airey, RJ,期刊:Applied Physics Letters, 页码:33507-33507 , 文章类型: Article,,卷期:2011年99-23]
- We have investigated the polarized-resolved photoluminescence from the contact layers and the quantum-well in an n-type GaAs/GaAlAs resonant tunneling diode for magnetic fields up to 19 T. The optical emission from the G...
- Thermal conductance modulator based on folded graphene nanoribbons - art. no. 233101
[作者:Ouyang, T; Chen, YP; Xie, YE; Stocks, GM; Zhong, JX,期刊:Applied Physics Letters, 页码:33101-33101 , 文章类型: Article,,卷期:2011年99-23]
- Based on folded graphene nanoribbons, we report a thermal conductance modulator which performs analogous operations as the rheostat in electronic circuits. This fundamental device can controllably and reversibly modulate...
- Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot - art. no. 233108
[作者:Shi, Z; Simmons, CB; Prance, JR; Gamble, JK; Friesen, M; Savage, DE; Lagally, MG; Coppersmith, SN; Eriksson, MA,期刊:Applied Physics Letters, 页码:33108-33108 , 文章类型: Article,,卷期:2011年99-23]
- We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field and identify the spin of the lowest three eigenstates in an effective two-electron regime. We extract the singlet-tr...
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