- Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric
[作者：Kaelblein, D; Weitz, RT; Bottcher, HJ; Ante, F; Zschieschang, U; Kern, K; Klauk, H,期刊：Nano Letters, 页码：5309-5315 , 文章类型： Article，,卷期：2011年11-12]
- A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature hydrothermal method is reported. The gate dielectric of these transis...
- Toward Efficient Carbon Nanotube/P3HT Solar Cells: Active Layer Morphology, Electrical, and Optical Properties
[作者：Ren, SQ; Bernardi, M; Lunt, RR; Bulovic, V; Grossman, JC; Gradecak, S,期刊：Nano Letters, 页码：5316-5321 , 文章类型： Article，,卷期：2011年11-12]
- We demonstrate single-walled carbon nanotube (SWCNT)/P3HT polymer bulk heterojunction solar cells with an AM1.5 efficiency of 0.72%, significantly higher than previously reported (0.05%). A key step in achieving high eff...
- Tracking Iridium Atoms with Electron Microscopy: First Steps of Metal Nanocluster Formation in One-Dimensional Zeolite Channels
[作者：Aydin, C; Lu, J; Liang, AJ; Chen, CY; Browning, ND; Gates, BC,期刊：Nano Letters, 页码：5537-5541 , 文章类型： Article，,卷期：2011年11-12]
- Using aberration-corrected scanning transmission electron microscopy (STEM), we imaged iridium atoms in isolated iridium complexes in the one-dimensional nonintersecting 14-ring channels of zeolite SSZ-53. STEM allows tr...
- Transformations of Carbon Adsorbates on Graphene Substrates under Extreme Heat
[作者：Westenfelder, B; Meyer, JC; Biskupek, J; Kurasch, S; Scholz, F; Krill, CE; Kaiser, U,期刊：Nano Letters, 页码：5123-5127 , 文章类型： Article，,卷期：2011年11-12]
- We describe new phenomena of structural reorganization of carbon adsorbates as revealed by in situ atomic-resolution transmission electron microscopy (TEM) performed on specimens at extreme temperatures. In our investiga...
- Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors
[作者：Yi, KS; Trivedi, K; Floresca, HC; Yuk, H; Hu, W; Kim, MJ,期刊：Nano Letters, 页码：5465-5470 , 文章类型： Article，,卷期：2011年11-12]
- Quantum confinement of carriers has a substantial impact on nanoscale device operations. We present electrical transport analysis for lithographically fabricated sub-5 nm thick Si nanowire field-effect transistors and sh...
- Surface Plasmon-Enhanced Nanopillar Photodetectors
[作者：Senanayake, P; Hung, CH; Shapiro, J; Lin, A; Liang, BL; Williams, BS; Huffaker, DL,期刊：Nano Letters, 页码：5279-5283 , 文章类型： Article，,卷期：2011年11-12]
- We demonstrate nanopillar- (NP) based plasmon-enhanced photodetectors (NP-PEPDs) operating in the near-infrared spectral regime. A novel fabrication technique produces subwavelength elongated nanoholes in a metal surface...
- Surfactant Ligand Removal and Rational Fabrication of Inorganically Connected Quantum Dots
[作者：Zhang, HT; Hu, B; Sun, LF; Hovden, R; Wise, FW; Muller, DA; Robinson, RD,期刊：Nano Letters, 页码：5356-5361 , 文章类型： Article，,卷期：2011年11-12]
- A novel method is reported to create inorganically connected nanocrystal (NC) assemblies for both II-VI and IV-VI semiconductors by removing surfactant ligands using (NTH4)(2)S. This surface modification process differs ...
- Photoluminescence from Chemically Exfoliated MoS2
[作者：Eda, G; Yamaguchi, H; Voiry, D; Fujita, T; Chen, MW; Chhowalla, M,期刊：Nano Letters, 页码：5111-5116 , 文章类型： Article，,卷期：2011年11-12]
- A two-dimensional crystal of molybdenum disulfide (MoS2) monolayer is a photoluminescent direct gap semiconductor in striking contrast to its bulk counterpart. Exfoliation of bulk MoS2 via Li intercalation is an attracti...
- Reversal of Hall-Petch Effect in Structural Stability of PbTe Nanocrystals and Associated Variation of Phase Transformation
[作者：Quan, ZW; Wang, YX; Bae, IT; Loc, WS; Wang, CY; Wang, ZW; Fang, JY,期刊：Nano Letters, 页码：5531-5536 , 文章类型： Article，,卷期：2011年11-12]
- Using an in situ synchrotron X-ray diffraction technique, a pressure-induced phase transformation of PbTe nanocrystals with sizes of 13 and 5 rim up to similar to 20 GPa was studied. Upon an increase of pressure, we obse...
- Room-Temperature Tunnel Magnetoresistance in Self-Assembled Chemically Synthesized Metallic Iron Nanoparticles
[作者：Dugay, J; Tan, RP; Meffre, A; Blon, T; Lacroix, LM; Carrey, J; Fazzini, PF; Lachaize, S; Chaudret, B; Respaud, M,期刊：Nano Letters, 页码：5128-5134 , 文章类型： Article，,卷期：2011年11-12]
- We report on room temperature magnetoresistance in networks of chemically synthesized metallic Fe nanoparticles surrounded by two types of organic barriers. Electrical properties, featuring Coulomb blockade, and magnetot...
- Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon
[作者：Gasseller, M; DeNinno, M; Loo, R; Harrison, JF; Caymax, M; Rogge, S; Tessmer, SH,期刊：Nano Letters, 页码：5208-5212 , 文章类型： Article，,卷期：2011年11-12]
- Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of na...
- Spin Relaxation in InGaN Quantum Disks in GaN Nanowires
[作者：Banerjee, A; Dogan, F; Heo, J; Manchon, A; Guo, W; Bhattacharya, P,期刊：Nano Letters, 页码：5396-5400 , 文章类型： Article，,卷期：2011年11-12]
- The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order ...
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