- Polarized Raman microscopy of anisotropic stress relaxation in strained-Si-on-insulator stripes - art. no. 191911
[作者:Poborchii, V; Tada, T; Usuda, K; Kanayama, T,期刊:Applied Physics Letters, 页码:91911-91911 , 文章类型: Article,,卷期:2011年99-19]
- Using a high-numerical-aperture lens, we studied strain relaxation in the [110]-oriented strained-silicon-on-insulator (SSOI) stripes. A complete set of Si optical phonon Raman bands was observed. For a 50 nm thick SSOI,...
- Study on transport pathway in oxide nanowire growth by using spacing-controlled regular array - art. no. 193105
[作者:Klamchuen, A; Yanagida, T; Kanai, M; Nagashima, K; Oka, K; Rahong, S; Gang, M; Horprathum, M; Suzuki, M; Hidaka, Y; Kai, S; Kawai, T,期刊:Applied Physics Letters, 页码:93105-93105 , 文章类型: Article,,卷期:2011年99-19]
- Metal oxide nanowires formed via vapor-liquid-solid (VLS) process are promising nanoscale building blocks. Although understanding material transport pathways across three phases is crucial to realize well-defined oxide n...
- Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition - art. no. 193505
[作者:Molle, A; Lamagna, L; Grazianetti, C; Brammertz, G; Merckling, C; Caymax, M; Spiga, S; Fanciulli, M,期刊:Applied Physics Letters, 页码:93505-93505 , 文章类型: Article,,卷期:2011年99-19]
- Tuning the desorption temperature of an As cap layer allows to achieve In0.53Ga0.47As(001) surfaces with (2 x 4) and (4 x 2) reconstructions which exhibit different chemical reactivity upon exposure in atmospheric pressu...
- Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions - art. no. 193504
[作者:Ganguly, S; Verma, J; Li, GW; Zimmermann, T; Xing, HL; Jena, D,期刊:Applied Physics Letters, 页码:93504-93504 , 文章类型: Article,,卷期:2011年99-19]
- Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of investigating scaling properties...
- Surface effect on resistive switching behaviors of ZnO - art. no. 192106
[作者:Ke, JJ; Liu, ZJ; Kang, CF; Lin, SJ; He, JH,期刊:Applied Physics Letters, 页码:92106-92106 , 文章类型: Article,,卷期:2011年99-19]
- The interaction between chemisorbed oxygen adatoms (O-2(ad)(-)) and oxygen vacancies associated with the formation/rupture of conductive filaments dominates the switching yield of ZnO, which is also confirmed by the fact...
- Probing the metal-insulator transition of NdNiO3 by electrostatic doping - art. no. 192107
[作者:Son, J; Jalan, B; Kajdos, AP; Balents, L; Allen, SJ; Stemmer, S,期刊:Applied Physics Letters, 页码:92107-92107 , 文章类型: Article,,卷期:2011年99-19]
- Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator...
- Solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a silicon integrated-circuit - art. no. 193103
[作者:Serrels, KA; Farrell, C; Lundquist, TR; Reid, DT; Vedagarbha, P,期刊:Applied Physics Letters, 页码:93103-93103 , 文章类型: Article,,卷期:2011年99-19]
- By inducing two-photon absorption within the active layer of a proprietary silicon test chip, we demonstrate here solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a 500-MHz ring oscillator circuit a...
- Transmission electron microscopy study of GaInNAs(Sb) thin films grown by atomic hydrogen-assisted molecular beam epitaxy - art. no. 191907
[作者:Oshima, R; Huang, JY; Miyashita, N; Matsubara, K; Okada, Y; Ponce, FA,期刊:Applied Physics Letters, 页码:91907-91907 , 文章类型: Article,,卷期:2011年99-19]
- The quaternary GaInNAs is a promising material system for use in next generation multijunction photovoltaic devices. We have investigated the effect of introducing antimony on the growth by using transmission electron mi...
- Single-molecule measurement of strand breaks on large DNA induced by atmospheric pressure plasma jet - art. no. 191504
[作者:Kurita, H; Nakajima, T; Yasuda, H; Takashima, K; Mizuno, A; Wilson, JIB; Cunningham, S,期刊:Applied Physics Letters, 页码:91504-91504 , 文章类型: Article,,卷期:2011年99-19]
- We report a single-molecule-based analysis of strand breakages on large DNA molecules induced by an atmospheric pressure plasma jet. We exposed DNA solution to an argon plasma jet; single-molecule observation that involv...
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