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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共40条记录   Room-temperature, atmospheric plasma needle reduces adenovirus gene expression in HEK 293A host cells - art. no. 253703 [作者：Xiong, Z; Lu, X; Cao, Y; Ning, Q; Ostrikov, K; Lu, Y; Zhou, X; Liu, J,期刊：Applied Physics Letters, 页码：53703-53703 , 文章类型： Article，,卷期：2011年99-25] Room-temperature, atmospheric-pressure plasma needle treatment is used to effectively minimize the adenovirus (AdV) infectivity as quantified by the dramatic reduction of its gene expression in HEK 293A primary human emb... Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes - art. no. 253506 [作者：Shan, QF; Meyaard, DS; Dai, Q; Cho, J; Schubert, EF; Son, JK; Sone, C,期刊：Applied Physics Letters, 页码：53506-53506 , 文章类型： Article，,卷期：2011年99-25] The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by temperature dependent current-voltage measurements. At low temperature, the leakage current is attributed to variable-range-hopping conduct... Tunable and collimated terahertz radiation generation by femtosecond laser pulses - art. no. 251101 [作者：Malik, HK; Malik, AK,期刊：Applied Physics Letters, 页码：51101-51101 , 文章类型： Article，,卷期：2011年99-25] A mechanism is proposed for the generation of tunable terahertz (THz) radiation under the application of two femtosecond laser pulses and an external magnetic field, where quick tunnel ionization is achieved that leads t... Size dependent biexciton binding energies in GaN quantum dots - art. no. 251903 [作者：Amloy, S; Yu, KH; Karlsson, KF; Farivar, R; Andersson, TG; Holtz, PO,期刊：Applied Physics Letters, 页码：51903-51903 , 文章类型： Article，,卷期：2011年99-25] Single GaN/Al(Ga)N quantum dots (QDs) have been investigated by means of microphotoluminescence. Emission spectra related to excitons and biexcitons have been identified by excitation power dependence and polarization re... Quantum efficiency control of InGaN/GaN multi-quantum-well structures using Ag/SiO2 core-shell nanoparticles - art. no. 251114 [作者：Jang, LW; Sahoo, T; Jeon, DW; Kim, M; Jeon, JW; Jo, DS; Kim, MK; Yu, YT; Polyakov, AY; Lee, IH,期刊：Applied Physics Letters, 页码：51114-51114 , 文章类型： Article，,卷期：2011年99-25] Photoluminescence (PL) efficiency increase up to 2.8 times was observed for GaN/InGaN multi-quantum-well (MQW) structures as a result of deposition of a thin layer of about 40-nm-diameter Ag nanoparticles (NPs) surrounde... Strain enhanced electron cooling in a degenerately doped semiconductor - art. no. 251908 [作者：Prest, MJ; Muhonen, JT; Prunnila, M; Gunnarsson, D; Shah, VA; Richardson-Bullock, JS; Dobbie, A; Myronov, M; Morris, RJH; Whall, TE; Parker, EHC; Leadley, DR,期刊：Applied Physics Letters, 页码：51908-51908 , 文章类型： Article，,卷期：2011年99-25] Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 mu m(3). The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an un... Thermal rectification in multi-walled carbon nanotubes: A molecular dynamics study - art. no. 251901 [作者：Gordiz, K; Allaei, SMV; Kowsary, F,期刊：Applied Physics Letters, 页码：51901-51901 , 文章类型： Article，,卷期：2011年99-25] Using nonequilibrium molecular dynamics simulations, we show if a multi-walled carbon nanotube (MWNT) is heated asymmetrically, an evident thermal rectification can be detected. We attribute the observed rectification to... Modal dependence of dissipation in silicon nitride drum resonators - art. no. 253103 [作者：Adiga, VP; Ilic, B; Barton, RA; Wilson-Rae, I; Craighead, HG; Parpia, JM,期刊：Applied Physics Letters, 页码：53103-53103 , 文章类型： Article，,卷期：2011年99-25] We have fabricated large (<= 400 mu m diameter) high tensile stress SiN membrane mechanical resonators and measured the resonant frequency and quality factors (Q) of different modes of oscillation using optical interfero... Negative capacitor paves the way to ultra-broadband metamaterials - art. no. 254103 [作者：Hrabar, S; Krois, I; Bonic, I; Kiricenko, A,期刊：Applied Physics Letters, 页码：54103-54103 , 文章类型： Article，,卷期：2011年99-25] Experimental demonstration of the overcoming of basic dispersion-energy constraints in metamaterials with the help of active non-Foster negative capacitors is reported. The experimental metamaterial operates in RF regime... Optical lattices of InGaN quantum well excitons - art. no. 251103 [作者：Chaldyshev, VV; Bolshakov, AS; Zavarin, EE; Sakharov, AV; Lundin, WV; Tsatsulnikov, AF; Yagovkina, MA; Kim, T; Park, Y,期刊：Applied Physics Letters, 页码：51103-51103 , 文章类型： Article，,卷期：2011年99-25] We demonstrate optical Bragg lattices formed by quasi-two-dimensional excitons in periodic systems of the InGaN quantum wells separated by the GaN barriers. When the Bragg resonance and exciton-polariton resonance are tu... Nonlinear behavior of photoluminescence from silicon particles under two-photon excitation - art. no. 251105 [作者：Xu, XS; Yokoyama, S,期刊：Applied Physics Letters, 页码：51105-51105 , 文章类型： Article，,卷期：2011年99-25] Two-photon excited fluorescence (TPEF) under continuous-wave excitation from silicon particles produced by a pulsed laser is investigated. Spectra and images of TPEF from silicon particles are studied under different exc... Optoelectronic behaviors and carrier dynamics of individual localized luminescent centers in InGaN quantum-well light emitting diodes - art. no. 251911 [作者：De, SM; Das, DK; Layek, A; Raja, A; Singh, MK; Bhattacharya, A; Dhar, S; Chowdhury, A,期刊：Applied Physics Letters, 页码：51911-51911 , 文章类型： Article，,卷期：2011年99-25] Spatially, spectrally, and temporally resolved photoluminescence (PL) microscopy was performed on InGaN quantum-well light emitting diodes to probe individual localized luminescent centers arising from disorder induced p... Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions - art. no. 252507 [作者：Gan, HD; Sato, H; Yamanouchi, M; Ikeda, S; Miura, K; Koizumi, R; Matsukura, F; Ohno, H,期刊：Applied Physics Letters, 页码：52507-52507 , 文章类型： Article，,卷期：2011年99-25] We have investigated a tunnel magnetoresistance (TMR) ratio of CoFeB/MgO perpendicular magnetic tunnel junctions (p-MTJs) with a 40 nm diameter as a function of an annealing temperature T-a. The TMR ratio at room tempera... Nucleation and propagation of voids in microbumps for 3 dimensional integrated circuits - art. no. 251913 [作者：Hsu, HH; Huang, SY; Chang, TC; Wu, AT,期刊：Applied Physics Letters, 页码：51913-51913 , 文章类型： Article，,卷期：2011年99-25] The shrinking solder dimensions greatly impact the reliability of devices and increase entire failure modes. Limited solder volumes can be consumed completely and transformed into intermetallic compound (IMC) microbumps.... Metal-oxide-oxide-metal granular tunnel diodes fabricated by anodization - art. no. 252101 [作者：Fan, WB; Dolph, MC; Lu, JW; Wolf, SA,期刊：Applied Physics Letters, 页码：52101-52101 , 文章类型： Article，,卷期：2011年99-25] A metal-oxide-oxide-metal (MO-OM) junction was fabricated based on anodized Al and Ta granular metal-oxide tunnel junctions. Electrical transport properties of the MO-OM junction were investigated at various temperatures... Morphology-dependent low-frequency Raman scattering in ultrathin spherical, cubic, and cuboid SnO2 nanocrystals - art. no. 251902 [作者：Liu, LZ; Wu, XL; Li, TH; Xiong, SJ; Chen, HT; Chu, PK,期刊：Applied Physics Letters, 页码：51902-51902 , 文章类型： Article，,卷期：2011年99-25] Nanoscale spherical, cubic, and cuboid SnO2 nanocrystals (NCs) are used to investigate morphology-dependent low-frequency Raman scattering. A double-peak structure in which the linewidths and energy separation between tw...