- Magnetoresistance in an ultrathin Bi2Se3 film between two ferromagnetic insulators - art. no. 182101
[作者:Yang, YY; Xu, Z; Sheng, L; Shen, R; Xing, DY,期刊:Applied Physics Letters, 页码:82101-82101 , 文章类型: Article,,卷期:2011年99-18]
- We theoretically investigate the magnetoresistance effect of an ultrathin Bi2Se3 film sandwiched between two ferromagnetic insulators (FIs). It is found that the conductance is quantized to be e(2)/h and vanishing, respe...
- Characterization of high-kappa LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition - art. no. 182103
[作者:Yang, S; Huang, S; Chen, HW; Schnee, M; Zhao, QT; Schubert, J; Chen, KJ,期刊:Applied Physics Letters, 页码:82103-82103 , 文章类型: Article,,卷期:2011年99-18]
- We report the study of high-dielectric-constant (high-kappa) dielectric LaLuO3 (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN he...
- Electronic structures in single self-assembled InAs quantum dashes detected by nanogap metal electrodes - art. no. 182104
[作者:Shibata, K; Seki, K; Luukko, PJJ; Rasanen, E; Cha, KM; Horiuchi, I; Hirakawa, K,期刊:Applied Physics Letters, 页码:82104-82104 , 文章类型: Article,,卷期:2011年99-18]
- We have investigated electronic structures in single self-assembled InAs quantum dashes (QDHs) coupled to metal nanogap electrodes. The fabricated QDH samples operate as single electron transistors, exhibiting high diffe...
- Large rectifying leakage current in Pt/BaTiO3/Nb:SrTiO3/Pt structure - art. no. 182106
[作者:Zhang, TJ; Pan, RK; Ma, ZJ; Duan, MG; Wang, DF; He, M,期刊:Applied Physics Letters, 页码:82106-82106 , 文章类型: Article,,卷期:2011年99-18]
- 20-nm-thickness epitaxial BaTiO3 (BTO) thin films were prepared on the Nb-doped SrTiO3 single-crystal substrates by RF magnetron sputtering technology. The rectifying characteristic current-voltage curves were observed a...
- Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements - art. no. 182107
[作者:Ma, N; Wang, XQ; Liu, ST; Feng, L; Chen, G; Xu, FJ; Tang, N; Lu, LW; Shen, B,期刊:Applied Physics Letters, 页码:82107-82107 , 文章类型: Article,,卷期:2011年99-18]
- Temperature-dependent electron transport properties in electron accumulation layers of InN are quantified by using the multilayer model. Room temperature electron densities in the electron accumulation layers are 5.83 x ...
- Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes - art. no. 182109
[作者:Boucherit, M; Soltani, A; Monroy, E; Rousseau, M; Deresmes, D; Berthe, M; Durand, C; De Jaeger, JC,期刊:Applied Physics Letters, 页码:82109-82109 , 文章类型: Article,,卷期:2011年99-18]
- AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 mu m to 4 mu m. The current-voltage characteristics were carried ou...
- Light emission enhancement in blue InGaAlN/InGaN quantum well structures - art. no. 181101
[作者:Park, SH; Moon, YT; Han, DS; Park, JS; Oh, MS; Ahn, D,期刊:Applied Physics Letters, 页码:81101-81101 , 文章类型: Article,,卷期:2011年99-18]
- Optical properties of blue AlInGaN/InGaN quantum well (QW) structures with a quaternary AlInGaN well layer were investigated by using the non-Markovian gain model with many-body effects. The band-gap expression of the Al...
- High-performance, long-wave (similar to 10.2 mu m) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping - art. no. 181102
[作者:Chakrabarti, S; Adhikary, S; Halder, N; Aytac, Y; Perera, AGU,期刊:Applied Physics Letters, 页码:81102-81102 , 文章类型: Article,,卷期:2011年99-18]
- A high-performance InGaAs/GaAs vertical quantum dot infrared photodetector (QDIP) with combined barrier of quaternary In0.21Al0.21Ga0.58As and GaAs was investigated in this study. A dominant long wavelength (similar to 1...
|