- Enhanced Rashba effect in transverse magnetic fields observed on InGaAs/GaAsSb resonant tunneling diodes at temperatures up to T=180 K - art. no. 152107
[作者:de Sousa, JS; Detz, H; Klang, P; Gornik, E; Strasser, G; Smoliner, J,期刊:Applied Physics Letters, 页码:52107-52107 , 文章类型: Article,,卷期:2011年99-15]
- A huge Rashba splitting enhanced by an in-plane magnetic field is observed in non-magnetic InGaAs resonant tunneling diodes with GaAsSb barriers. At T = 4 K, the current resonances split by the Rashba effect reveal peak ...
- Mn segregation in Ge/Mn5Ge3 heterostructures: The role of surface carbon adsorption - art. no. 151908
[作者:Dau, MT; Thanh, VL; Le, TG; Spiesser, A; Petit, M; Michez, LA; Daineche, R,期刊:Applied Physics Letters, 页码:51908-51908 , 文章类型: Article,,卷期:2011年99-15]
- Mn5Ge3 compound, with its room-temperature ferromagnetism and possibility to epitaxially grow on Ge, acts as a potential spin injector into group-IV semiconductors. However, the realization of Ge/Mn5Ge3 multilayers is hi...
- Compressibility and hardness of Co-based bulk metallic glass: A combined experimental and density functional theory study - art. no. 151911
[作者:Wang, JF; Li, R; Xiao, RJ; Xu, T; Li, Y; Liu, ZQ; Huang, L; Hua, NB; Li, G; Li, YC; Zhang, T,期刊:Applied Physics Letters, 页码:51911-51911 , 文章类型: Article,,卷期:2011年99-15]
- An incompressible Co54Ta11B35 bulk metallic glass (BMG) was investigated using in situ high-pressure synchrotron diffraction and nanoindendation. The elastic constants were deduced from the experiments based on the isotr...
- Influence of copper excess on the absorber quality of CuInSe2 - art. no. 151912
[作者:Gutay, L; Regesch, D; Larsen, JK; Aida, Y; Depredurand, V; Siebentritt, S,期刊:Applied Physics Letters, 页码:51912-51912 , 文章类型: Article,,卷期:2011年99-15]
- The compositional dependence of the optoelectronic quality of CuInSe2 thin film absorbers is investigated on single-and poly-crystalline films with varying [Cu]/[In]-ratios. We quantify the quality of the absorbers by th...
- Ion impact crater asymmetry determines surface ripple orientation - art. no. 151913
[作者:Hossain, MZ; Das, K; Freund, JB; Johnson, HT,期刊:Applied Physics Letters, 页码:51913-51913 , 文章类型: Article,,卷期:2011年99-15]
- Ion bombardment causes surface instabilities on a range of materials including metals, semiconductors, and insulators. However, the proposed mechanisms for these instabilities have yet to explain the rich range of nanome...
- Raman study on the interlayer interactions and the band structure of bilayer graphene synthesized by alcohol chemical vapor deposition - art. no. 151916
[作者:Okano, M; Matsunaga, R; Matsuda, K; Masubuchi, S; Machida, T; Kanemitsu, Y,期刊:Applied Physics Letters, 页码:51916-51916 , 文章类型: Article,,卷期:2011年99-15]
- We investigated the electronic band structure and interlayer interactions in graphene synthesized by alcohol-chemical vapor deposition (a-CVD) using microprobe Raman spectroscopy and tight-binding band-structure calculat...
- Epitaxial oxide growth on polar (111) surfaces - art. no. 151917
[作者:Blok, JL; Wan, X; Koster, G; Blank, DHA; Rijnders, G,期刊:Applied Physics Letters, 页码:51917-51917 , 文章类型: Article,,卷期:2011年99-15]
- Obtaining-atomically smooth surfaces and interfaces of perovskite oxide materials on polar (111) surfaces presents a particular challenge as these surfaces and interfaces will reconstruct. Here, the effect of the use of ...
- High-reflectivity II-VI-based distributed Bragg reflectors for the blue-violet spectral range - art. no. 151101
[作者:Klembt, S; Dartsch, H; Anastasescu, M; Gartner, M; Kruse, C,期刊:Applied Physics Letters, 页码:51101-51101 , 文章类型: Article,,卷期:2011年99-15]
- We report on the realization of a high quality distributed Bragg reflector for the blue-violet spectral range, with both high and low refractive index layers lattice matched to the GaAs substrate. Our structure is grown ...
- Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy - art. no. 151102
[作者:Sodabanlu, H; Yang, JS; Tanemura, T; Sugiyama, M; Shimogaki, Y; Nakano, Y,期刊:Applied Physics Letters, 页码:51102-51102 , 文章类型: Article,,卷期:2011年99-15]
- Intersubband absorption saturation at 1.57 mu m wavelength was observed in a 400-mu m long Si3N4-rib AlN-based waveguide with GaN/AlN multiple quantum wells (MQWs) fabricated by metalorganic vapor phase epitaxy (MOVPE). ...
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