- N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping - art. no. 171104
[作者:Verma, J; Simon, J; Protasenko, V; Kosel, T; Xing, HG; Jena, D,期刊:Applied Physics Letters, 页码:71104-71104 , 文章类型: Article,,卷期:2011年99-17]
- Nitrogen-polar III-nitride heterostructures present unexplored advantages over Ga(metal)-polar crystals for optoelectronic devices. This work reports N-polar III-nitride quantum-well ultraviolet light-emitting diodes gro...
- Polarization dependent study of gain anisotropy in semipolar InGaN lasers - art. no. 171105
[作者:Rass, J; Wernicke, T; Ploch, S; Brendel, M; Kruse, A; Hangleiter, A; Scheibenzuber, W; Schwarz, UT; Weyers, M; Kneissl, M,期刊:Applied Physics Letters, 页码:71105-71105 , 文章类型: Article,,卷期:2011年99-17]
- The optical gain of single quantum well laser structures on semipolar (11 (2) over bar2)-GaN in dependence of the optical polarization and the resonator orientation has been studied by variable stripe length method. The ...
- Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers - art. no. 171106
[作者:Wang, CH; Chang, SP; Ku, PH; Li, JC; Lan, YP; Lin, CC; Yang, HC; Kuo, HC; Lu, TC; Wang, SC; Chang, CY,期刊:Applied Physics Letters, 页码:71106-71106 , 文章类型: Article,,卷期:2011年99-17]
- Graded-composition multiple quantum barriers (GQB) were designed and incorporated in c-plane InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrate to improve hole transport and efficiency droop. The ...
- Spin-orbit coupling effect on bismuth donor lasing in stressed silicon - art. no. 171108
[作者:Zhukavin, RK; Kovalevsky, KA; Tsyplenkov, VV; Shastin, VN; Pavlov, SG; Hubers, HW; Riemann, H; Abrosimov, NV; Ramdas, AK,期刊:Applied Physics Letters, 页码:71108-71108 , 文章类型: Article,,卷期:2011年99-17]
- We report a study on terahertz lasing from optically excited Bi donors in axially compressed silicon crystal. The laser frequency and the radiated power were measured versus stress applied along the [100] crystal axis. A...
- Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si - art. no. 171110
[作者:Reshchikov, MA; Willyard, AG; Behrends, A; Bakin, A; Waag, A,期刊:Applied Physics Letters, 页码:71110-71110 , 文章类型: Article,,卷期:2011年99-17]
- We report on the fabrication of GaN co-doped with silicon and zinc by metalorganic vapor phase epitaxy and a detailed study of photoluminescence in this material. We observe an exceptionally high absolute internal quantu...
- High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes - art. no. 171113
[作者:Farrell, RM; Haeger, DA; Hsu, PS; Schmidt, MC; Fujito, K; Feezell, DF; DenBaars, SP; Speck, JS; Nakamura, S,期刊:Applied Physics Letters, 页码:71113-71113 , 文章类型: Article,,卷期:2011年99-17]
- We demonstrate AlGaN-cladding-free (ACF) m-plane InGaN/GaN laser diodes (LDs) with peak output powers and estimated front facet optical power densities that are comparable to the state-of-the-art single-stripe emitter c-...
- Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors - art. no. 172901
[作者:Galatage, RV; Dong, H; Zhernokletov, DM; Brennan, B; Hinkle, CL; Wallace, RM; Vogel, EM,期刊:Applied Physics Letters, 页码:72901-72901 , 文章类型: Article,,卷期:2011年99-17]
- The interface trap density (D-it) and bonding of the HfO2/InP interface is investigated. The energy distribution of interface states extracted using capacitance-voltage measurements show a peak near midgap in InP and a t...
- Facile fabrication of lateral nanowire wrap-gate devices with improved performance - art. no. 173101
[作者:Dhara, S; Sengupta, S; Solanki, HS; Maurya, A; Pavan, A; Gokhale, MR; Bhattacharya, A; Deshmukh, MM,期刊:Applied Physics Letters, 页码:73101-73101 , 文章类型: Article,,卷期:2011年99-17]
- We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step and does no...
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