- Integration of thin film transistors and vertical thin film field emitter arrays using ion-induced bending - art. no. 032205
[作者:Yoshida, T; Nishi, T; Nagao, M; Shimizu, T; Kanemaru, S,期刊:Journal Of Vacuum Science & Technology B, 页码:32205-32205 , 文章类型: Article,,卷期:2011年29-3]
- A vertical thin film field emitter array (VTF-FEA) was integrated with a thin film transistor (TFT) through a simple fabrication process that is compatible with the existing TFT manufacturing process. Specifically, the a...
- Comprehensive comparison of electrical and reliability characteristics of various copper barrier films - art. no. 031207
[作者:Cheng, YL; Wu, J; Chiu, TJ; Chen, SA; Wang, YL,期刊:Journal Of Vacuum Science & Technology B, 页码:31207-31207 , 文章类型: Article,,卷期:2011年29-3]
- The physical, electrical, and reliability characteristics of various Copper (Cu) barrier films, including SiC, SiCN, SiCO, SiCNO, and SiN, were investigated. The experimental results indicate that the SiN film is the bes...
- Epitaxial growth of CoxMnySiz (111) thin films in the compositional range around the Heusler alloy Co2MnSi - art. no. 03C124
[作者:He, L; Collins, BA; Tsui, F; Chu, YS,期刊:Journal Of Vacuum Science & Technology B, 页码:C3124-C3124 , 文章类型: Article,,卷期:2011年29-3]
- Epitaxial growth and structural properties of CoxMnySiz thin films on Ge (111) substrates, including the Heusler alloy Co2MnSi (111), have been studied using combinatorial molecular beam epitaxy (MBE) techniques. In situ...
- Surface stiffness modification by e-beam irradiation for stem cell growth control - art. no. 030604
[作者:Lu, BR; Lanniel, M; Alexandar, M; Liu, R; Chen, YF; Huq, E,期刊:Journal Of Vacuum Science & Technology B, 页码:30604-30604 , 文章类型: Article,,卷期:2011年29-3]
- This article reports a novel method to effectively modify the surface stiffness for the differentiation of stem cell growth. To achieve large range of surface hardness, focused electron beam is first employed to radiate ...
- Growth and optical properties of InP nanowires formed by Au-assisted metalorganic chemical vapor deposition: Effect of growth temperature - art. no. 030603
[作者:Guo, JW; Huang, H; Ren, XM; Yan, X; Cai, SW; Wang, W; Wang, Q; Huang, YQ; Zhang, X,期刊:Journal Of Vacuum Science & Technology B, 页码:30603-30603 , 文章类型: Article,,卷期:2011年29-3]
- Vertical indium phosphide nanowires (NWs) were grown at different temperatures by metalorganic chemical vapor deposition via a gold (Au)-assisted vapor-liquid-solid mechanism. At a low growth temperature (420 degrees C),...
- Transfer of carbon nanosheet films to nongrowth, zero thermal budget substrates - art. no. 030602
[作者:Quinlan, RA; Javier, A; Foos, EE; Buckley, L; Zhu, MY; Hou, K; Widenkvist, E; Drees, M; Jansson, U; Holloway, BC,期刊:Journal Of Vacuum Science & Technology B, 页码:30602-30602 , 文章类型: Article,,卷期:2011年29-3]
- Carbon-based nanostructures and materials have become a popular subject of research due to their unique thermal, mechanical, electrical, and optical properties. For example, the strong C-C bonds of graphene-based systems...
- Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas - art. no. 030601
[作者:Choi, KH; Lee, SH; Park, JH; Sohn, KY; Lee, JW; Pearton, SJ,期刊:Journal Of Vacuum Science & Technology B, 页码:30601-30601 , 文章类型: Article,,卷期:2011年29-3]
- Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas using only mechanical pumping is reported. The mean pulsed dc voltage on the cathode was used as a process variable in the experiment. When the mean pulsed...
- Fabrication of high-aspect-ratio lightpipes - art. no. 031206
[作者:Ye, WN; Duane, P; Wober, M; Crozier, KB,期刊:Journal Of Vacuum Science & Technology B, 页码:31206-31206 , 文章类型: Article,,卷期:2011年29-3]
- The authors report the development of two fabrication processes for creating high-aspect-ratio lightpipes in a 10 mu m thick SiO2 layer, with smooth, uniform, and straight vertical sidewalls. Both processes require only ...
- Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors - art. no. 031205
[作者:Lo, CF; Ren, F; Chang, CY; Pearton, SJ; Chen, SH; Chang, CM; Wang, SY; Chyi, JI; Kravchenko, II,期刊:Journal Of Vacuum Science & Technology B, 页码:31205-31205 , 文章类型: Article,,卷期:2011年29-3]
- A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga0.58As0.77Sb0.23/In0.53Ga0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants w...
- Antireflection properties and solar cell application of silicon nanostructures - art. no. 031208
[作者:Yue, HH; Jia, R; Chen, C; Ding, WC; Meng, YL; Wu, DQ; Wu, DW; Chen, W; Liu, XY; Jin, Z; Wang, WW; Ye, TC,期刊:Journal Of Vacuum Science & Technology B, 页码:31208-31208 , 文章类型: Article,,卷期:2011年29-3]
- Silicon nanowire (Si NW) arrays were fabricated on polished and pyramids textured mono-crystalline Si (mc-Si) using an aqueous chemical etching method. The Si NWs and a hybrid texture of NWs and pyramids both show strong...
- Analysis of charging effects on highly resistive materials under electron irradiation by using transient-absorbed-current method - art. no. 031209
[作者:Tsuno, N; Ominami, Y; Ohta, H; Shinada, H; Makino, H; Kimura, Y,期刊:Journal Of Vacuum Science & Technology B, 页码:31209-31209 , 文章类型: Article,,卷期:2011年29-3]
- Accumulation and relaxation properties of charge in highly resistive materials under electron irradiation were investigated by using an absorption current stimulated by sequential two-pulse electron beams. The amount of ...
- Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors - art. no. 031211
[作者:Lo, CF; Kang, TS; Liu, L; Ren, F; Pearton, SJ; Kim, J; Jang, S; Laboutin, O; Cao, Y; Johnson, JW,期刊:Journal Of Vacuum Science & Technology B, 页码:31211-31211 , 文章类型: Article,,卷期:2011年29-3]
- The effects of plasma enhanced vapor deposited silicon nitride (SiNx) passivation layer thickness and the spacing between the contact windows openings in the SiNx layer on the isolation-blocking voltage of nitrogen ion i...
|