- Effects of molecular functionalization sequence on mesoporous silica film properties - art. no. 010602
[作者:Singh, B; Garg, S; Jain, A; Moore, R; Ramanath, G,期刊:Journal Of Vacuum Science & Technology B, 页码:10602-10602 , 文章类型: Article,,卷期:2011年29-1]
- Functionalizing mesoporous silica (MPS) films with multiple organosilanes is attractive for tailoring stable low permittivity (low k) dielectrics for nanodevice wiring applications. Here, the authors show that the organo...
- Temperature hysteresis of the capacitance dependence C(T) for ferroelectric ceramics - art. no. 01A501
[作者:Dedyk, A; Pavlova, Y; Karmanenko, S; Semenov, A; Semikin, D; Pakhomov, O; Starkov, A; Starkov, I,期刊:Journal Of Vacuum Science & Technology B, 页码:A1501-A1501 , 文章类型: Article,,卷期:2011年29-1]
- The influence of applied electric field, temperature variation rate, and free charge carrier density on the hysteresis of C(T) dependence is investigated on ferroelectric ceramic capacitors. The measurements were perform...
- Properties of SiO2 and Si3N4 as gate dielectrics for printed ZnO transistors - art. no. 01A601
[作者:Walther, S; Polster, S; Meyer, B; Jank, MPM; Ryssel, H; Frey, L,期刊:Journal Of Vacuum Science & Technology B, 页码:A1601-A1601 , 文章类型: Article,,卷期:2011年29-1]
- In this article, the authors report on thin film transistors based on gas phase synthesized ZnO nanoparticles using low temperature deposited silicon dioxide and silicon nitride as gate dielectrics. For bottom gate trans...
- Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3-based metal-insulator-metal capacitors grown by atomic layer deposition - art. no. 01AC04
[作者:Garcia, H; Castan, H; Gomez, A; Duenas, S; Bailon, L; Kukli, K; Kariniemi, M; Kemell, M; Niinisto, J; Ritala, M; Leskela, M,期刊:Journal Of Vacuum Science & Technology B, 页码:AC104-AC104 , 文章类型: Article,,卷期:2011年29-1]
- SrTiO3 thin films were grown to thicknesses in the range of 18-30 nm by atomic layer deposition using Sr((Pr3Cp)-Pr-i)(2) and (CpMe5)Ti(OMe)(3) as strontium and titanium precursors at 250 and 300 degrees C. Water or ozon...
- Deposit profiles characterized by the seed layer in Cu pulse-reverse plating on a patterned substrate - art. no. 011004
[作者:Cho, SK; Kim, MJ; Lim, T; Kwon, OJ; Kim, JJ,期刊:Journal Of Vacuum Science & Technology B, 页码:11004-11004 , 文章类型: Article,,卷期:2011年29-1]
- The Cu deposit profile from pulse-reverse plating is affected by the characteristics of the Cu seed layer. When a reverse current is applied to a patterned structure, the sidewall Cu film was dissolved preferentially in ...
- Nanoimprint replication of nonplanar nanostructure fabricated by focused-ion-beam chemical vapor deposition - art. no. 011005
[作者:Kang, YJ; Omoto, S; Nakai, Y; Okada, M; Kanda, K; Haruyama, Y; Matsui, S,期刊:Journal Of Vacuum Science & Technology B, 页码:11005-11005 , 文章类型: Article,,卷期:2011年29-1]
- Nanoimprint lithography (NIL) is a very useful technique for replicating planar nanostructures at low cost with high throughput, but an expansion from planar to nonplanar will probably be required to enhance the function...
- Metallic oxygen barrier diffusion applied to high-kappa deposition - art. no. 01A701
[作者:Rauwei, E; Rauwel, P; Ducroquet, F; Matko, I; Lourenco, AC,期刊:Journal Of Vacuum Science & Technology B, 页码:A1701-A1701 , 文章类型: Article,,卷期:2011年29-1]
- A thin metallic interlayer was deposited on Si and Si/SiO2 substrate prior to the sputtering of HfO2 films. The metallic interlayer, in fact, acts as an oxygen barrier during the HfO2 deposition, preventing the formation...
- Epitaxial growth of Dy2O3 films on SrTiO3(001) substrates by molecular beam epitaxy - art. no. 01A801
[作者:Bhuiyan, MNK; Menghini, M; Locquet, JP; Seo, JW; Dieker, C; Jager, W; Marchiori, C,期刊:Journal Of Vacuum Science & Technology B, 页码:A1801-A1801 , 文章类型: Article,,卷期:2011年29-1]
- Epitaxial Dy2O3 thin films are grown on SrTiO3(001) substrates by molecular beam epitaxy. Structural, morphological, and interfacial properties of the Dy2O3 film are investigated by in situ reflection high-energy electro...
- Interfacial properties of HfO2 dielectric film on Ge substrate - art. no. 01A802
[作者:He, DW; Cheng, XH; Xu, DW; Wang, ZJ; Yu, YH; Sun, QQ; Zhang, DW,期刊:Journal Of Vacuum Science & Technology B, 页码:A1802-A1802 , 文章类型: Article,,卷期:2011年29-1]
- HfO2 dielectric films were grown on Ge substrate and annealed. High resolution transmission electron microscopy indicated that postdeposition annealing promoted further crystallization of HfO2 films and aggravated interf...
- Applicability of molecular beam deposition for the growth of high-k oxides - art. no. 01AC05
[作者:Grube, M; Martin, D; Weber, WM; Mikolajick, T; Bierwagen, O; Geelhaar, L; Riechert, H,期刊:Journal Of Vacuum Science & Technology B, 页码:AC105-AC105 , 文章类型: Article,,卷期:2011年29-1]
- Following the demand of replacing conventional dielectrics in the semiconductor industry, a material screening for new high-k dielectrics is necessary. In this article, the molecular beam deposition is presented as a ver...
- Evaluation of the electrical and physical properties of thin calcium titanate high-k insulators for capacitor applications - art. no. 01AC07
[作者:Krause, A; Weber, W; Jahn, A; Richter, K; Pohl, D; Rellinghaus, B; Schroder, U; Heitmann, J; Mikolajick, T,期刊:Journal Of Vacuum Science & Technology B, 页码:AC107-AC107 , 文章类型: Article,,卷期:2011年29-1]
- Thin calcium titanate (CaTiO3) films are investigated as promising insulator materials with very high-k values for future microelectronic devices such as metal-insulator-metal (MIM) capacitors and field-effect transistor...
|