- Fabrication of metal nanowires by ion-beam irradiation of oxides through high aspect ratio resist masks - art. no. 021013
[作者:Gurovich, BA; Prikhod'ko, KE; Taldenkov, AN; Chumakov, NK; Fedorov, GE; Yakubovsky, AY; Bogdanov, AL,期刊:Journal Of Vacuum Science & Technology B, 页码:21013-21013 , 文章类型: Article,,卷期:2011年29-2]
- A method of ion-beam-induced reduction in oxides is used to produce metal-bismuth nanowires embedded into a matrix of a highly insulating dielectric-bismuth oxide. The metal film is formed in the process of reduction of ...
- Silicon nanostructure solar cells with excellent photon harvesting - art. no. 021014
[作者:Chen, C; Jia, R; Yue, HH; Li, HF; Liu, XY; Ye, TC; Kasai, S; Tamotsu, H; Wu, NJ; Wang, SL; Chu, JH; Xu, BS,期刊:Journal Of Vacuum Science & Technology B, 页码:21014-21014 , 文章类型: Article,,卷期:2011年29-2]
- Silicon (Si) nanostructure solar cells have been synthesized using a nanowire (NW) array as the surface texturing. Optical-reflection measurement exhibits an excellent photon-harvesting property for the Si-NW-array textu...
- Formation of 10-mu m-level patterned organic thin film using microthermal evaporation - art. no. 021016
[作者:Choi, JH; Zoulkarneev, A; Noh, TY; Lee, YG; Il Kim, S; Park, SS; Baik, CW; Choi, BL; Kim, M; Yi, GC; Kim, JM,期刊:Journal Of Vacuum Science & Technology B, 页码:21016-21016 , 文章类型: Article,,卷期:2011年29-2]
- This article reports the fabrication of 10-mu m-level stripe patterns on an organic layer using microthermal evaporation. During this process, an organic layer is coated on a glass substrate with a bridge-type microheate...
- Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage - art. no. 021018
[作者:Li, WL; Jia, R; Chen, C; Li, HF; Liu, XY; Yue, HH; Ding, WC; Ye, TC; Kasai, S; Hashizume, T; Wu, NJ; Xu, BS,期刊:Journal Of Vacuum Science & Technology B, 页码:21018-21018 , 文章类型: Article,,卷期:2011年29-2]
- Annealing thin films of silicon containing HfO2 films deposited by an electron-beam coevaporation produces silicon nanocrystals embedded in high-kappa dielectric HfO2. Such films can be used to fabricate nonvolatile memo...
- Direct patterning of coplanar polyethylene glycol alkylsilane monolayers by deep-ultraviolet photolithography as a general method for high fidelity, long-term cell patterning and culture - art. no. 021020
[作者:Wilson, K; Stancescu, M; Das, M; Rumsey, J; Hickman, J,期刊:Journal Of Vacuum Science & Technology B, 页码:21020-21020 , 文章类型: Article,,卷期:2011年29-2]
- This manuscript details a general method for patterning coplanar alkylsilane monolayers using deep-ultraviolet photolithography that has broad application for high fidelity patterning of cells of varying phenotype in lon...
- Effects of channel dimensions on performance of a-InGaZnO4 thin-film transistors - art. no. 021203
[作者:Heo, YW; Cho, KM; Sun, SY; Kim, SY; Lee, JH; Kim, JJ; Norton, DP; Pearton, SJ,期刊:Journal Of Vacuum Science & Technology B, 页码:21203-21203 , 文章类型: Article,,卷期:2011年29-2]
- The authors report an investigation of the effects of channel dimensions on the properties of amorphous-InGaZnO4 (a-IGZO) thin-film transistors (TFTs) that are associated with surface depletion and surface/volume ratio. ...
- Rapid fabrication of bilayer graphene devices using direct laser writing photolithography - art. no. 021204
[作者:Leon, JA; Alves, ES; Elias, DC; Brant, JC; Barbosa, TC; Malard, LM; Pimenta, MA; Ribeiro, GM; Plentz, F,期刊:Journal Of Vacuum Science & Technology B, 页码:21204-21204 , 文章类型: Article,,卷期:2011年29-2]
- In this work the authors establish the use of the photolithography technique by direct laser writing for fabrication of devices on bilayer graphene coated with a photoresist. This technique is simple to use, versatile, r...
- Photonic crystal structures with ultrahigh aspect ratio in lithium niobate fabricated by focused ion beam milling - art. no. 021205
[作者:Si, GY; Danner, AJ; Teo, SL; Teo, EJ; Teng, JH; Bettiol, AA,期刊:Journal Of Vacuum Science & Technology B, 页码:21205-21205 , 文章类型: Article,,卷期:2011年29-2]
- Lithium niobate (LiNbO3, LN) is an important material which is widely applied in fabricating photonic and acoustic devices. However, it is difficult to either wet etch or dry etch LN due to the material's properties. Her...
- Strong enhancement of ultraviolet emission from ZnO films by V implantation - art. no. 021207
[作者:Kim, CO; Shin, DH; Choi, SH; Belay, K; Elliman, RG,期刊:Journal Of Vacuum Science & Technology B, 页码:21207-21207 , 文章类型: Article,,卷期:2011年29-2]
- ZnO films were prepared on Si(100) wafers by rf sputtering and subsequently implanted with V ions to fluences of (1,2.5,5,10) x 10(15) cm(-2). The room-temperature ultraviolet photoluminescence (PL) intensity of the impl...
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