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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共93条记录   Spin-polarized charge carrier injection by tunneling from ferromagnetic contacts into organic semiconductors [作者：Yunus, M; Ruden, PP; Smith, DL,期刊：Applied Physics Letters, 页码：223304-223304 , 文章类型： Article，,卷期：2010年97-22] Tunnel-injection of spin-polarized charge carriers from ferromagnetic contacts into organic semiconductors is modeled. Tunneling matrix elements and transition rates for the two spin types are calculated using a transfer... Enhanced performance of inverted polymer solar cells with cathode interfacial tuning via water-soluble polyfluorenes [作者：Na, SI; Kim, TS; Oh, SH; Kim, J; Kim, SS; Kim, DY,期刊：Applied Physics Letters, 页码：223305-223305 , 文章类型： Article，,卷期：2010年97-22] Enhanced performance of inverted polymer solar cells (PSCs) is demonstrated by indium tin oxide (ITO) interfacial tuning via a water-soluble polyfluorene (WPF-6-oxy-F). Kelvin probe studies and dark current-voltage curve... Single-mode waveguiding in bundles of self-assembled semiconductor nanowires [作者：Zhang, J; Lutich, AA; Susha, AS; Rogach, AL; Jackel, F; Feldmann, J,期刊：Applied Physics Letters, 页码：221915-221915 , 文章类型： Article，,卷期：2010年97-22] We report on waveguiding in bundles of parallel oriented semiconductor nanowires, self-assembled from colloidal CdTe nanocrystals in solution at room temperature. Individual bundles, as narrow as 170 nm, act as single-mo... Investigation on the formation mechanism of p-type Li-N dual-doped ZnO [作者：Zhang, BY; Yao, B; Li, YF; Zhang, ZZ; Li, BH; Shan, CX; Zhao, DX; Shen, DZ,期刊：Applied Physics Letters, 页码：222101-222101 , 文章类型： Article，,卷期：2010年97-22] Lithium and nitrogen dual-doped ZnO films [ZnO:(Li,N)] with Li concentrations of 0%-11.2% were grown on sapphire by plasma-assisted molecular beam epitaxy, and a stable p-type ZnO:(Li, N) film was obtained by doping 6.1%... Effect of top metal contact on electrical transport through individual multiwalled carbon nanotubes [作者：Kulshrestha, N; Misra, A; Srinivasan, S; Hazra, KS; Bajpai, R; Roy, S; Vaidya, G; Misra, DS,期刊：Applied Physics Letters, 页码：222102-222102 , 文章类型： Article，,卷期：2010年97-22] The effect of position of top metal contact on the electrical transport through individual multiwalled carbon nanotubes (MWNTs) has been investigated using gas injection system in situ in scanning electron microscope to ... Trapping effect evaluation of gateless AlGaN/GaN heterojunction field-effect transistors using transmission-line-model method [作者：Hu, CY; Hashizume, T; Ohi, K; Tajima, M,期刊：Applied Physics Letters, 页码：222103-222103 , 文章类型： Article，,卷期：2010年97-22] An electric-field-dependent trapping effect was observed in our AlGaN/GaN transmission-line-model (TLM) structure. Therefore, we adopted a "gradual voltage stress" scheme to induce a similar trapping effect, that is, a s... Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures [作者：Higashiwaki, M; Chowdhury, S; Swenson, BL; Mishra, UK,期刊：Applied Physics Letters, 页码：222104-222104 , 文章类型： Article，,卷期：2010年97-22] The effects of oxidation on the surface structure and chemical bonding states of AlGaN/GaN heterostructures were investigated using x-ray photoelectron spectroscopy (XPS). In comparing Al 2p core-level XPS spectra among ... Schottky and tunneling behavior of Fe/MgO/Ge(100) structures [作者：Laloe, JB; Hickey, MC; Chang, J; Moodera, JS,期刊：Applied Physics Letters, 页码：222105-222105 , 文章类型： Article，,卷期：2010年97-22] We investigated interface and electrical properties of Ge-based Schottky and tunnel diodes with crystalline MgO barriers. Following a simple cleaning procedure not requiring a high-temperature anneal, x-ray data indicate... Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming [作者：Bory, BF; Meskers, SCJ; Janssen, RAJ; Gomes, HL; de Leeuw, DM,期刊：Applied Physics Letters, 页码：222106-222106 , 文章类型： Article，,卷期：2010年97-22] Metal oxide-polymer diodes require electroforming before they act as nonvolatile resistive switching memory diodes. Here we investigate the early stages of the electroforming process in Al/Al2O3/poly(spirofluorene)/Ba/Al... Dual dielectric tunnel barrier in silicon-rich silicon nitride charge-trap nonvolatile memory [作者：Kim, E; Yim, T; An, S; Cho, WJ; Park, K,期刊：Applied Physics Letters, 页码：222107-222107 , 文章类型： Article，,卷期：2010年97-22] We investigated a tunnel barrier with dual (SiO2 and SiNx) dielectric layers in charge-trap nonvolatile memories to improve the program/erase speed and charge retention characteristics. Threshold voltage shift measuremen... Mechanism of ultrahigh Mn concentration in epitaxially grown wurtzite Ga1-xMnxN [作者：Chen, ZT; Wang, L; Yang, XL; Wang, CD; Zhang, GY,期刊：Applied Physics Letters, 页码：222108-222108 , 文章类型： Article，,卷期：2010年97-22] The mechanism of Mn doping in epitaxially grown wurtzite Ga1-xMnxN has been investigated by using first-principles calculations. Although the Mn solubility limit is calculated to be as low as 0.032% under thermodynamical... Thermal nonlinear effects in hybrid optical microresonators [作者：Choi, HS; Armani, AM,期刊：Applied Physics Letters, 页码：223306-223306 , 文章类型： Article，,卷期：2010年97-22] The inherent material properties of silica reduce the susceptibility of silica optical microcavities to many nonlinear phenomena, enabling the development of devices with improved stability. However, large nonlinear coef... Polymer space-charge-limited transistor as a solid-state vacuum tube triode [作者：Chao, YC; Ku, MC; Tsai, WW; Zan, HW; Meng, HF; Tsai, HK; Horng, SF,期刊：Applied Physics Letters, 页码：223307-223307 , 文章类型： Article，,卷期：2010年97-22] We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3 x 10(5) at a low operation voltage of 1.5 V by using... Extreme dielectric strength in boron doped homoepitaxial diamond [作者：Volpe, PN; Muret, P; Pernot, J; Omnes, F; Teraji, T; Koide, Y; Jomard, F; Planson, D; Brosselard, P; Dheilly, N; Vergne, B; Scharnholz, S,期刊：Applied Physics Letters, 页码：223501-223501 , 文章类型： Article，,卷期：2010年97-22] The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finit... Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale [作者：Lin, CH; Doutt, DR; Mishra, UK; Merz, TA; Brillson, LJ,期刊：Applied Physics Letters, 页码：223502-223502 , 文章类型： Article，,卷期：2010年97-22] Nanoscale Kelvin probe force microscopy and depth-resolved cathodoluminescence spectroscopy reveal an electronic defect evolution inside operating AlGaN/GaN high electron mobility transistors with degradation under elect... Strain response of La0.7Sr0.3CoO3 epitaxial thin films probed by SrTiO3 crystalline microcantilevers [作者：Biasotti, M; Pellegrino, L; Bellingeri, E; Manca, N; Siri, AS; Marre, D,期刊：Applied Physics Letters, 页码：223503-223503 , 文章类型： Article，,卷期：2010年97-22] We investigate the effect of tensile strain on the resistivity of La0.7Sr0.3CoO3 thin films grown on SrTiO3 microcantilevers. Strain is applied by bending the microcantilevers both mechanically through an atomic force mi...