- Proton irradiation effects on AlN/GaN high electron mobility transistors
[作者:Lo, CF; Chang, CY; Chu, BH; Kim, HY; Kim, J; Cullen, DA; Zhou, L; Smith, DJ; Pearton, SJ; Dabiran, A; Cui, B; Chow, PP; Jang, S; Ren, F,期刊:Journal Of Vacuum Science & Technology B, 页码:L47-L51 , 文章类型: Article,,卷期:2010年28-5]
- AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2x10(11) to 2x10(15) protons/cm(2). Changes from 10% to 35% of the saturation drain current and the source-drain resi...
- Radioisotope-powered ion gauge with super high stability, long life, and large sensitivity range from ultrahigh vacuum to high pressure
[作者:Lu, YR; Lal, A,期刊:Journal Of Vacuum Science & Technology B, 页码:L52-L54 , 文章类型: Article,,卷期:2010年28-5]
- The authors report the radioisotope-powered ion gauge (RPIG) using the safe, low activity, planar radioactive Ni-63 beta thin-film source as the cold cathode. RPIG has both high stability and long lifetime with Ni-63 hal...
- Stabilization of a tungsten < 310 > cold field emitter
[作者:Kasuya, K; Katagiri, S; Ohshima, T; Kokubo, S,期刊:Journal Of Vacuum Science & Technology B, 页码:L55-L60 , 文章类型: Article,,卷期:2010年28-5]
- Cold-field-emission current from a tungsten < 310 > emitter in a scanning electron microscope (SEM) gun, evacuated by an ion pump and a supplementary nonevaporative getter pump, was stabilized. It was verified that the p...
- Integrated high-inductance three-dimensional toroidal inductors
[作者:Yu, L; Weon, DH; Kim, JI; Mohammadi, S,期刊:Journal Of Vacuum Science & Technology B, 页码:903-907 , 文章类型: Article,,卷期:2010年28-5]
- Fabrication, characterizations, and modeling of three-dimensional high-inductance value toroidal inductors are presented. The effect of substrate and number of turns on toroidal inductors with 16, 31, and 62 turn fabrica...
- InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates
[作者:Wu, M; Leach, JH; Ni, X; Li, X; Xie, J; Dogan, S; Ozgur, U; Morkoc, H; Paskova, T; Preble, E; Evans, KR; Lu, CZ,期刊:Journal Of Vacuum Science & Technology B, 页码:908-911 , 文章类型: Article,,卷期:2010年28-5]
- InAlN/GaN heterostructure field-effect transistors (HFETs) have been grown and fabricated on Fe-doped semi-insulating c-plane GaN substrates. The problematic parasitic leakage caused by interface charge between the epita...
- TiN thin film resistors for monolithic microwave integrated circuits
[作者:Malmros, A; Sudow, M; Andersson, K; Rorsman, N,期刊:Journal Of Vacuum Science & Technology B, 页码:912-915 , 文章类型: Article,,卷期:2010年28-5]
- Titanium nitride (TiN) thin film resistors (TFRs) have been fabricated by reactive sputter deposition. The TFRs were characterized in terms of composition, thickness, and resistance. Furthermore, a first assessment of th...
- Planarization of high aspect ratio p-i-n diode pillar arrays for blanket electrical contacts
[作者:Voss, LF; Shao, Q; Reinhardt, CE; Graff, RT; Conway, AM; Nikolic, RJ; Deo, N; Cheung, CL,期刊:Journal Of Vacuum Science & Technology B, 页码:916-920 , 文章类型: Article,,卷期:2010年28-5]
- Two planarization techniques for high aspect ratio three dimensional pillar structured p-i-n diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique a...
- Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
[作者:Petit-Etienne, C; Darnon, M; Vallier, L; Pargon, E; Cunge, G; Boulard, F; Joubert, O; Banna, S; Lill, T,期刊:Journal Of Vacuum Science & Technology B, 页码:926-934 , 文章类型: Article,,卷期:2010年28-5]
- Plasma oxidation of the c-Si substrate through a very thin gate oxide layer can be observed during HBr/O-2/Ar based plasma overetch steps of gate etch processes. This phenomenon generates the so-called silicon recess in ...
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