- Enhancement of the zero phonon line emission from a single nitrogen vacancy center in a nanodiamond via coupling to a photonic crystal cavity
[作者:Wolters, J; Schell, AW; Kewes, G; Nusse, N; Schoengen, M; Doscher, H; Hannappel, T; Lochel, B; Barth, M; Benson, O,期刊:Applied Physics Letters, 页码:141108-141108 , 文章类型: Article,,卷期:2010年97-14]
- Using a nanomanipulation technique a nanodiamond with a single nitrogen vacancy center is placed directly on the surface of a gallium phosphide photonic crystal cavity. A Purcell-enhancement of the fluorescence emission ...
- 1.54 mu m emitters based on erbium doped InGaN p-i-n junctions
[作者:Dahal, R; Ugolini, C; Lin, JY; Jiang, HX; Zavada, JM,期刊:Applied Physics Letters, 页码:141109-141109 , 文章类型: Article,,卷期:2010年97-14]
- We present here on the growth, fabrication and electroluminescence (EL) characteristics of light emitting diodes (LEDs) based on Er-doped InGaN active layers. The p-i-n structures were grown using metal organic chemical ...
- Concentration dependence of the transport energy level for charge carriers in organic semiconductors
[作者:Oelerich, JO; Huemmer, D; Weseloh, M; Baranovskii, SD,期刊:Applied Physics Letters, 页码:143302-143302 , 文章类型: Article,,卷期:2010年97-14]
- The concept of the transport energy (TE) has proven to be one of the most powerful theoretical approaches to describe charge transport in organic semiconductors. In the recent paper L. Li, G. Meller, and H. Kosina [Appl....
- Operation stability enhancement in organic photovoltaic device by a metal doped organic exciton blocking layer
[作者:Lo, MF; Ng, TW; Lai, SL; Wong, FL; Fung, MK; Lee, ST; Lee, CS,期刊:Applied Physics Letters, 页码:143304-143304 , 文章类型: Article,,卷期:2010年97-14]
- While metal diffusion in organic layers have been considered as causes for performance degradation in organic light-emitting devices, we show that suitable metal doping can instead improve physical stability of organic f...
- Experimental verification of improving high-power microwave window breakdown thresholds by resonant magnetic field
[作者:Chang, C; Fang, JY; Zhang, ZQ; Chen, CH; Tang, CX; Jin, QL,期刊:Applied Physics Letters, 页码:141501-141501 , 文章类型: Article,,卷期:2010年97-14]
- Recently, high-power microwave (HPM) dielectric multipactor is theoretically discovered to be suppressed by utilizing external resonant magnetic field. This paper gives the related experimental demonstration of increasin...
- DNA oxidation by singlet delta oxygen produced by atmospheric pressure microdischarges
[作者:Sousa, JS; Bauville, G; Lacour, B; Puech, V; Touzeau, M; Ravanat, JL,期刊:Applied Physics Letters, 页码:141502-141502 , 文章类型: Article,,卷期:2010年97-14]
- Arrays of microcathode sustained discharges were developed for the production of singlet delta oxygen (SDO) at atmospheric pressure. SDO densities higher than 3.5 x 10(16) cm(-3) have been efficiently produced and transp...
- Broadband negative refraction in stacked fishnet metamaterial
[作者:Wei, ZY; Cao, Y; Han, J; Wu, C; Fan, YC; Li, HQ,期刊:Applied Physics Letters, 页码:141901-141901 , 文章类型: Article,,卷期:2010年97-14]
- We demonstrate a scheme to utilize the stacked fishnet metamaterial for all-angle negative refraction and subwavelength imaging within a wide frequency range starting from zero frequency. The theoretical predictions are ...
- High-performance n-type organic field-effect transistors with ionic liquid gates
[作者:Ono, S; Minder, N; Chen, Z; Facchetti, A; Morpurgo, AF,期刊:Applied Physics Letters, 页码:143307-143307 , 文章类型: Article,,卷期:2010年97-14]
- High-performance n-type organic field-effect transistors were developed with ionic-liquid gates and N, N ''-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements ...
- Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
[作者:Ali, A; Madan, HS; Kirk, AP; Zhao, DA; Mourey, DA; Hudait, MK; Wallace, RM; Jackson, TN; Bennett, BR; Boos, JB; Datta, S,期刊:Applied Physics Letters, 页码:143502-143502 , 文章类型: Article,,卷期:2010年97-14]
- N-type and p-type GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) and plasma-enhanced-ALD (PEALD) Al2O3 dielectrics are studied to identify the optimum surface preparation and oxide ...
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