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  • Terahertz heterodyne spectrometer using a quantum cascade laser
    [作者:Ren, Y; Hovenier, JN; Higgins, R; Gao, JR; Klapwijk, TM; Shi, SC; Bell, A; Klein, B; Williams, BS; Kumar, S; Hu, Q; Reno, JL,期刊:Applied Physics Letters, 页码:161105-161105 , 文章类型: Article,,卷期:2010年97-16]
  • A terahertz (THz) heterodyne spectrometer is demonstrated based on a quantum cascade laser (QCL) as a local oscillator (LO) and an NbN hot electron bolometer as a mixer, and it is used to measure high-resolution molecula...
  • Ultrafast optical imaging by molecular wakes
    [作者:Wu, JA; Lu, PF; Liu, J; Li, H; Pan, HF; Zeng, HP,期刊:Applied Physics Letters, 页码:161106-161106 , 文章类型: Article,,卷期:2010年97-16]
  • Ultrafast optical imaging is demonstrated by ultrashort laser pulse induced impulsive molecular alignment, involving optical image storage in the created molecular wakes followed by periodic readout and display. For diat...
  • Nanoslot laser
    [作者:Kita, S; Hachuda, S; Nozaki, K; Babab, T,期刊:Applied Physics Letters, 页码:161108-161108 , 文章类型: Article,,卷期:2010年97-16]
  • We propose and demonstrate photonic crystal nanolaser with a nanoslot. Using high-aspect etching process, we succeed in fabricating a 30-nm-wide nanoslot device and room temperature lasing in both air and liquids. As an ...
  • Trapping in high-k dielectrics
    [作者:Rao, R; Simoncini, R; Irrera, F,期刊:Applied Physics Letters, 页码:163502-163502 , 文章类型: Article,,卷期:2010年97-16]
  • In this paper, an analytical model of trapping in high-k dielectrics is proposed. It starts from the general rate equation and relies on the hypothesis that the density of states involved in the capture mechanism follows...
  • Optically-addressed two-terminal multicolor photodetector
    [作者:Steenbergen, EH; DiNezza, MJ; Dettlaff, WHG; Lim, SH; Zhang, YH,期刊:Applied Physics Letters, 页码:161111-161111 , 文章类型: Article,,卷期:2010年97-16]
  • A two-terminal multicolor photodetector that is most advantageous for greater than two bands is proposed. This two-terminal design is particularly significant for focal plane arrays as it maximizes the fill factor and si...
  • X-ray detectors based on GaN Schottky diodes
    [作者:Duboz, JY; Frayssinet, E; Chenot, S; Reverchon, JL; Idir, M,期刊:Applied Physics Letters, 页码:163504-163504 , 文章类型: Article,,卷期:2010年97-16]
  • GaN Schottky diodes have been fabricated and tested as x-ray detectors in the range from 6 to 21 keV. The spectral response has been measured and is compared to its theoretical value. The study of the response and its te...