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  • Settling the "Dead Layer" Debate in Nanoscale Capacitors
    [作者:Chang, LW; Alexe, M; Scott, JF; Gregg, JM,期刊:ADVANCED MATERIALS, 页码:4911-4911 , 文章类型: Article,,卷期:2009年21-48]
  • Permittivity peaks in single crystal thin film capacitors are strongly suppressed compared to bulk in the case of Pt/SrTiO3/Pt, but are relatively unaffected in Pt/BaTiO3/Pt structures. This is consistent with the recent...
  • Electronic and Mechanical Coupling in Bent ZnO Nanowires
    [作者:Han, XB; Kou, LZ; Lang, XL; Xia, JB; Wang, N; Qin, R; Lu, J; Xu, J; Liao, ZM; Zhang, XZ; Shan, XD; Song, XF; Gao, JY; Guo, WL; Yu, DP,期刊:ADVANCED MATERIALS, 页码:4937-4937 , 文章类型: Article,,卷期:2009年21-48]
  • A red shift of the exciton of ZnO nanowires is efficiently produced by bending strain, as demonstrated by a low-temperature (81 K) cathodoluminescence (CL) study of ZnO nanowires bent into L- or S-shapes. The figure show...