- Controlled growth of (100) or (111) CdTe epitaxial layers on (100) GaAs by molecular beam epitaxy and study of their electron spin relaxation times
[作者:Zhang, Q; Li, YP; Pagliero, D; Charles, W; Shen, AD; Meriles, CA; Tamargo, MC,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- The authors demonstrate control of the crystalline orientation [(100) or (111)] of molecular beam epitaxy-grown CdTe films on (100) ZnSe/GaAs substrates. Reflection high-energy electron diffraction is used to observe the...
- Study of rapid thermal annealing effect on CdZnO thin films grown on Si substrate
[作者:Li, L; Yang, Z; Zuo, Z; Kong, JY; Liu, JL,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- CdZnO thin films were grown on Si (100) substrates by plasma-assisted molecular beam epitaxy. As-grown samples show near band edge emissions at 1.87, 2.03, and 2.16 eV, respectively, while the emission peak energy dramat...
- Optical study of strongly coupled CdSe quantum dots
[作者:Zhang, SK; Myint, T; Wang, WB; Das, BB; Perez-Paz, N; Lu, H; Tamargo, MC; Shen, A; Alfano, RR,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- Electronic coupling of vertically stacked CdSe quantum dots is investigated by photoluminescence (PL), time-resolved photoluminescence (t-PL) techniques and Raman techniques. Five samples with each containing 30 layers o...
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