- Photovoltage versus microprobe sheet resistance measurements on ultrashallow structures
[作者:Clarysse, T; Moussa, A; Parmentier, B; Bogdanowicz, J; Vandervorst, W; Bender, H; Pfeffer, M; Schellenberger, M; Nielsen, PF; Thorsteinsson, S; Lin, R; Petersen, D,期刊:Journal Of Vacuum Science & Technology B, 页码:C1C8-C1C14 , 文章类型: Article,,卷期:2010年28-1]
- Earlier work [T. Clarysse , Mater. Sci. Eng., B 114-115, 166 (2004); T. Clarysse , Mater. Res. Soc. Symp. Proc. 912, 197 (2006)] has shown that only few contemporary tools are able to measure reliably (within the interna...
- Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves
[作者:Bogdanowicz, J; Dortu, F; Clarysse, T; Vandervorst, W; Rosseel, E; Nguyen, ND; Shaughnessy, D; Salnik, A; Nicolaides, L,期刊:Journal Of Vacuum Science & Technology B, 页码:C1C1-C1C7 , 文章类型: Article,,卷期:2010年28-1]
- The ITRS Roadmap highlights the electrical characterization of the source and drain extension regions as a key challenge for future complimentary-metal-oxide-semiconductor technology. Presently, an accurate determination...
- Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
[作者:Giubertoni, D; Pepponi, G; Sahiner, MA; Kelty, SP; Gennaro, S; Bersani, M; Kah, M; Kirkby, KJ; Doherty, R; Foad, MA; Meirer, F; Streli, C; Woicik, JC; Pianetta, P,期刊:Journal Of Vacuum Science & Technology B, 页码:C1B1-C1B5 , 文章类型: Article,,卷期:2010年28-1]
- The use of nonequilibrium annealing approaches can produce very high levels of arsenic electrical activation in Si. However, subsequent thermal treatments between 500 and 800 degrees C easily deactivate the dopant to a l...
- Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
[作者:Pelaz, L; Marques, LA; Aboy, M; Santos, I; Lopez, P; Duffy, R,期刊:Journal Of Vacuum Science & Technology B, 页码:C1A1-C1A6 , 文章类型: Article,,卷期:2010年28-1]
- Ion implantation continues being the dominant technique to introduce dopants in Si devices. With the device feature size in the nanometer scale, the accurate and detailed description of as-implanted dopant and damage pro...
- Electron holography for analysis of deep submicron devices: Present status and challenges
[作者:Ikarashi, N; Toda, A; Uejima, K; Yako, K; Yamamoto, T; Hane, M; Sato, H,期刊:Journal Of Vacuum Science & Technology B, 页码:C1D5-C1D10 , 文章类型: Article,,卷期:2010年28-1]
- A potential distribution analysis of source/drain (SD) regions in sub-30-nm-gate-length metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented as an example of the present status of electron holography...
- Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
[作者:Kallesoe, C; Molhave, K; Larsen, KF; Engstrom, D; Hansen, TM; Boggild, P; Martensson, T; Borgstrom, M; Samuelson, L,期刊:Journal Of Vacuum Science & Technology B, 页码:21-26 , 文章类型: Article,,卷期:2010年28-1]
- Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires us...
- Sensitivity study of micro four-point probe measurements on small samples
[作者:Wang, F; Petersen, DH; Hansen, TM; Henriksen, TR; Boggild, P; Hansen, O,期刊:Journal Of Vacuum Science & Technology B, 页码:C1C34-C1C40 , 文章类型: Article,,卷期:2010年28-1]
- The authors calculate the sensitivities of micro four-point probe sheet resistance and Hall effect measurements to the local transport properties of nonuniform material samples. With in-line four-point probes, the measur...
- Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies
[作者:Herrmann, T; Flachowsky, S; Illgen, R; Klix, W; Stenzel, R; Hontschel, J; Feudel, T; Horstmann, M,期刊:Journal Of Vacuum Science & Technology B, 页码:C1G7-C1G11 , 文章类型: Article,,卷期:2010年28-1]
- Asymmetric halo and extension implantations are examined by simulation for their usability in 45 and 32 nm technology high performance silicon on insulator metal oxide semiconductor field effect transistors (SOI-MOSFETs)...
- Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
[作者:Mody, J; Duffy, R; Eyben, P; Goossens, J; Moussa, A; Polspoel, W; Berghmans, B; van Dal, MJH; Pawlak, BJ; Kaiser, M; Weemaes, RGR; Vandervorst, W,期刊:Journal Of Vacuum Science & Technology B, 页码:C1H5-C1H13 , 文章类型: Article,,卷期:2010年28-1]
- With emerging three-dimensional device architectures for advanced silicon devices such as fin field-effect-transistors (FinFETs), new metrology challenges are faced to characterize dopants. The ratio of dopant concentrat...
- Interaction of NiSi with dopants for metallic source/drain applications
[作者:Luo, J; Qiu, ZJ; Zhang, Z; Ostling, M; Zhang, SL,期刊:Journal Of Vacuum Science & Technology B, 页码:C1I1-C1I11 , 文章类型: Article,,卷期:2010年28-1]
- This work has a focus on NiSi as a possible metallic contact for aggressively scaled complementary metal oxide semiconductor devices. As the bulk work function of NiSi lies close to the middle of Si bandgap, the Schottky...
- Study of submelt laser induced junction nonuniformities using Therma-Probe
[作者:Rosseel, E; Bogdanowicz, J; Clarysse, T; Vandervorst, W; Ortolland, C; Hoffmann, T; Salnik, A; Nicolaides, L; Han, SH; Petersen, DH; Lin, R; Hansen, O,期刊:Journal Of Vacuum Science & Technology B, 页码:C1C21-C1C26 , 文章类型: Article,,卷期:2010年28-1]
- Submelt laser annealing is a promising technique to achieve the required sheet resistance and junction depth specifications for the 32 nm technology node and beyond. In order to obtain a production worthy process, it is ...
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