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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共69条记录   Tactile objects based on an amplitude disturbed diffraction pattern method [作者：Liu, Y; Nikolovski, JP; Mechbal, N; Hafez, M; Verge, M,期刊：Applied Physics Letters, 页码：251904-251904 , 文章类型： Article，,卷期：2009年95-25] Tactile sensing is becoming widely used in human-computer interfaces. Recent advances in acoustic approaches demonstrated the possibilities to transform ordinary solid objects into interactive interfaces. This letter pro... Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11(2)over-bar2) GaN free standing substrates [作者：Tyagi, A; Wu, F; Young, EC; Chakraborty, A; Ohta, H; Bhat, R; Fujito, K; DenBaars, SP; Nakamura, S; Speck, JS,期刊：Applied Physics Letters, 页码：251905-251905 , 文章类型： Article，,卷期：2009年95-25] Misfit strain relaxation via misfit dislocation (MD) generation was observed in heteroepitaxially grown (Al,In) GaN layers on free-standing semipolar (11 (2) over bar2) GaN substrates. Cross-section transmission electron... Atomic structure evolution in bulk metallic glass under compressive stress [作者：Wang, G; Mattern, N; Pauly, S; Bednarcik, J; Eckert, J,期刊：Applied Physics Letters, 页码：251906-251906 , 文章类型： Article，,卷期：2009年95-25] The structural behavior of Cu64.5Zr35.5 bulk metallic glass under compressive stress was investigated by means of in situ high energy x-ray synchrotron diffraction. The topological and chemical short-range order of the g... Copolymer solution-based "smart window" [作者：Gong, XQ; Li, JX; Chen, SY; Wen, WJ,期刊：Applied Physics Letters, 页码：251907-251907 , 文章类型： Article，,卷期：2009年95-25] The authors report the design of a prototype smart window based on the phenomenon of the thermally induced aggregation of triblock copolymer poly (ethyleneoxide)-poly (propylene oxide)-poly (ethylene oxide) (EPE). Fluore... Characteristics of surface states and charge neutrality level in Ge [作者：Kuzum, D; Martens, K; Krishnamohan, T; Saraswat, KC,期刊：Applied Physics Letters, 页码：252101-252101 , 文章类型： Article，,卷期：2009年95-25] The characteristics of surface states on Ge are investigated using metal/insulator/semiconductor structures and the conductance technique. Evidence of acceptor-like and donor-like surface states on the valence band side ... Enhancement of electroluminescence from TiO2/p(+)-Si heterostructure-based devices through engineering of oxygen vacancies in TiO2 [作者：Zhang, YY; Ma, XY; Chen, PL; Li, DS; Pi, XD; Yang, DR; Coleman, PG,期刊：Applied Physics Letters, 页码：252102-252102 , 文章类型： Article，,卷期：2009年95-25] We report that electroluminescence (EL) from TiO2/p(+)-Si heterostructure-based devices can be significantly enhanced through a prior treatment of TiO2 films in argon (Ar) plasma. It is found that the Ar-plasma treatment... Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors [作者：Kim, CJ; Kim, S; Lee, JH; Park, JS; Kim, S; Park, J; Lee, E; Lee, J; Park, Y; Kim, JH; Shin, ST; Chung, UI,期刊：Applied Physics Letters, 页码：252103-252103 , 文章类型： Article，,卷期：2009年95-25] We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically. Adding of hafnium (Hf) element can suppress growing the columnar structur... Bandgap engineering of graphene: A density functional theory study [作者：Liu, L; Shen, ZX,期刊：Applied Physics Letters, 页码：252104-252104 , 文章类型： Article，,卷期：2009年95-25] Three ways of engineering the bandgap of graphene, i.e., surface bonding, isoelectronic codoping, and alternating electrical/chemical environment, are analyzed with the effective mass approximation and density-functional... Why nitrogen cannot lead to p-type conductivity in ZnO [作者：Lyons, JL; Janotti, A; Van de Walle, CG,期刊：Applied Physics Letters, 页码：252105-252105 , 文章类型： Article，,卷期：2009年95-25] Based on electronic structure and atomic size considerations, nitrogen has been regarded as the most suitable impurity for p-type doping in ZnO. However, numerous experimental efforts by many different groups have not re... p-type conduction in beryllium-implanted hexagonal boron nitride films [作者：He, B; Zhang, WJ; Yao, ZQ; Chong, YM; Yang, Y; Ye, Q; Pan, XJ; Zapien, JA; Bello, I; Lee, ST; Gerhards, I; Zutz, H; Hofsass, H,期刊：Applied Physics Letters, 页码：252106-252106 , 文章类型： Article，,卷期：2009年95-25] p-type conduction in hexagonal boron nitride (hBN) films was achieved by beryllium implantation and subsequent rapid thermal annealing treatment. The dependence of phase composition and electrical properties of hBN films... Millisecond flash lamp annealing of shallow implanted layers in Ge [作者：Wundisch, C; Posselt, M; Schmidt, B; Heera, V; Schumann, T; Mucklich, A; Grotzschel, R; Skorupa, W; Clarysse, T; Simoen, E; Hortenbach, H,期刊：Applied Physics Letters, 页码：252107-252107 , 文章类型： Article，,卷期：2009年95-25] Shallow n(+) layers in Ge are formed by phosphorus implantation and subsequent millisecond flash lamp annealing. Present investigations are focused on the dependence of P redistribution, diffusion and electrical activati... Enhanced shot noise in carbon nanotube field-effect transistors [作者：Betti, A; Fiori, G; Iannaccone, G,期刊：Applied Physics Letters, 页码：252108-252108 , 文章类型： Article，,卷期：2009年95-25] We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the nonequ... Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation [作者：Pandian, R; Kooi, BJ; Oosthoek, JLM; van den Dool, P; Palasantzas, G; Pauza, A,期刊：Applied Physics Letters, 页码：252109-252109 , 文章类型： Article，,卷期：2009年95-25] We show that polarity-dependent resistance switching in GeSbTe thin films depends strongly on Sb composition by comparing current-voltage characteristics in Sb-excess Ge2Sb2+xTe5 and stoichiometric Ge2Sb2Te5 samples. Thi... Vortex domain wall chirality rectification due to the interaction with end domain spin structures in permalloy nanowires [作者：Wilhelm, ES; McGrouther, D; Heyne, L; Bisig, A; Klaui, M,期刊：Applied Physics Letters, 页码：252501-252501 , 文章类型： Article，,卷期：2009年95-25] The interaction of vortex domain walls with the end domain spin structure present at the rectangular end of a ferromagnetic nanowire is investigated using Lorentz transmission electron microscopy. When vortex walls are m... The influence of the antiferromagnetic boundary on the magnetic property of La2NiMnO6 [作者：Wang, XJ; Sui, Y; Li, Y; Li, L; Zhang, XQ; Wang, Y; Liu, ZG; Su, WH; Tang, JK,期刊：Applied Physics Letters, 页码：252502-252502 , 文章类型： Article，,卷期：2009年95-25] Polycrystalline La2NiMnO6 compounds were fabricated at different temperatures and their magnetic properties were investigated. Although the antiferromagnetic antisite disorder degree changes a little, the antiferromagnet... High magnetic field matching effects in NbN films induced by template grown dense ferromagnetic nanowires arrays [作者：Hallet, X; Matefi-Tempfli, M; Michotte, S; Piraux, L; Vanacken, J; Moshchalkov, VV; Matefi-Tempfli, S,期刊：Applied Physics Letters, 页码：252503-252503 , 文章类型： Article，,卷期：2009年95-25] Dense arrays of ordered ferromagnetic nanowires have been used to create periodic magnetic pinning centers in thin superconducting NbN films. The nanowires were electrodeposited in a highly ordered porous alumina membran...