- Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation
[作者:Dasika, VD; Song, JD; Choi, WJ; Cho, NK; Lee, JI; Goldman, RS,期刊:Applied Physics Letters, 页码:163114-163114 , 文章类型: Article,,卷期:2009年95-16]
- We have investigated the influence of alloy buffer and capping layers on the shape, size, and density of self-assembled InAs/GaAs quantum dots. Cross-sectional scanning tunneling microscopy (XSTM) images reveal ellipse-s...
- 10 mu m minority-carrier diffusion lengths in Si wires synthesized by Cu-catalyzed vapor-liquid-solid growth
[作者:Putnam, MC; Turner-Evans, DB; Kelzenberg, MD; Boettcher, SW; Lewis, NS; Atwater, HA,期刊:Applied Physics Letters, 页码:163116-163116 , 文章类型: Article,,卷期:2009年95-16]
- The effective electron minority-carrier diffusion length, L-n,L-eff, for 2.0 mu m diameter Si wires that were synthesized by Cu-catalyzed vapor-liquid-solid growth was measured by scanning photocurrent microscopy. In dar...
- Vertical hybrid microcavity based on a polymer layer sandwiched between porous silicon photonic crystals
[作者:Sychev, FY; Razdolski, IE; Murzina, TV; Aktsipetrov, OA; Trifonov, T; Cheylan, S,期刊:Applied Physics Letters, 页码:163301-163301 , 文章类型: Article,,卷期:2009年95-16]
- A vertical hybrid microcavity is fabricated by sandwiching a polymer layer between distributed Bragg reflectors (DBRs) composed of porous silicon photonic crystals. The DBRs are made by electrochemical etching of Si and ...
- Performance improvement in transparent organic thin-film transistors with indium tin oxide/fullerene source/drain contact
[作者:Li, YC; Lin, YJ; Wei, CY; Lin, ZX; Wen, TC; Chang, MY; Tsai, CL; Wang, YH,期刊:Applied Physics Letters, 页码:163303-163303 , 文章类型: Article,,卷期:2009年95-16]
- With the use of fullerene (C-60)/indium tin oxide (ITO) source/drain electrode, the performance of a transparent thin-film transistor could be enhanced dramatically. The drain current can be increased by a factor of more...
- Mechanism of carrier injection in (Ni/Au)/p-AlxGa1-xN:MgO(0 <= X < 0.1) Ohmic contacts
[作者:Nikishin, S; Chary, I; Borisov, B; Kuryatkov, V; Kudryavtsev, Y; Asomoza, R; Karpov, SY; Holtz, M,期刊:Applied Physics Letters, 页码:163502-163502 , 文章类型: Article,,卷期:2009年95-16]
- We report the mechanism of current injection in (Ni/Au)/p-AlxGa1-xN:MgO(0 <= x<0.1) Ohmic contacts based on the temperature dependence of hole concentrations (p) and specific contact resistance (rho(c)). The injection me...
- Efficiency droop behavior of direct current aged GaN-based blue light-emitting diodes
[作者:Shao, XJ; Lu, H; Chen, DJ; Xie, ZL; Zhang, R; Zheng, YD,期刊:Applied Physics Letters, 页码:163504-163504 , 文章类型: Article,,卷期:2009年95-16]
- By direct current (dc) stressing, GaN-based blue light-emitting diodes (LEDs) with different density of nonradiative recombination centers in the active region of InGaN/GaN multiple quantum wells were obtained and studie...
- Remediation of Cr(VI) by biogenic magnetic nanoparticles: An x-ray magnetic circular dichroism study
[作者:Telling, ND; Coker, VS; Cutting, RS; van der Laan, G; Pearce, CI; Pattrick, RAD; Arenholz, E; Lloyd, JR,期刊:Applied Physics Letters, 页码:163701-163701 , 文章类型: Article,,卷期:2009年95-16]
- Biologically synthesized magnetite (Fe3O4) nanoparticles are studied using x-ray absorption and x-ray magnetic circular dichroism following exposure to hexavalent Cr solution. By examining their magnetic state, Cr cation...
- Identification and lattice location of oxygen impurities in alpha-Si3N4
[作者:Idrobo, JC; Oxley, MP; Walkosz, W; Klie, RF; Ogut, S; Mikijelj, B; Pennycook, SJ; Pantelides, ST,期刊:Applied Physics Letters, 页码:164101-164101 , 文章类型: Article,,卷期:2009年95-16]
- For over 40 years impurities have been believed to stabilize the ceramic alpha-Si3N4 but there is no direct evidence for their identity or lattice location. In bulk materials electron microscopy can generally image heavy...
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