- Photocurrent in Ag-Si photodiodes modulated by plasmonic nanopatterns
[作者：Wang, YM; Su, XD; Zhu, YY; Wang, QJ; Zhu, DL; Zhao, JW; Chen, S; Huang, WX; Wu, S,期刊：Applied Physics Letters, 页码：241106-241106 , 文章类型： Article，,卷期：2009年95-24]
- We demonstrate that Ag-Si photodiodes allow photocurrents to be modulated by changing periods of nanopatterns on Ag film. The maximum and minimum photocurrents occur in certain periods corresponding to the excitation of ...
- Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power
[作者：Rahim, M; Fill, M; Felder, F; Chappuis, D; Corda, M; Zogg, H,期刊：Applied Physics Letters, 页码：241107-241107 , 文章类型： Article，,卷期：2009年95-24]
- Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at -172 degrees C were realized. Emission wavelength changes from ...
- Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers
[作者：Chung, HJ; Choi, RJ; Kim, MH; Han, JW; Park, YM; Kim, YS; Paek, HS; Sone, CS; Park, YJ; Kim, JK; Schubert, EF,期刊：Applied Physics Letters, 页码：241109-241109 , 文章类型： Article，,卷期：2009年95-24]
- Multi-layer barrier structure is suggested as an alternative approach to single-layer polarization matching barrier structure for the reduction of efficiency droop. Time resolved photoluminescence measurement showed that...
- Whispering gallery-mode lasing in ZnO microrods at room temperature
[作者：Dai, J; Xu, CX; Zheng, K; Lv, CG; Cui, YP,期刊：Applied Physics Letters, 页码：241110-241110 , 文章类型： Article，,卷期：2009年95-24]
- An individual hexagonal ZnO microrod was employed as a whispering-gallery mode (WGM) microcavity to obtain ultraviolet lasing at room temperature. The WGM lasing shows a low threshold, a high quality factor, and distinct...
- Dual band terahertz metamaterial absorber: Design, fabrication, and characterization
[作者：Wen, QY; Zhang, HW; Xie, YS; Yang, QH; Liu, YL,期刊：Applied Physics Letters, 页码：241111-241111 , 文章类型： Article，,卷期：2009年95-24]
- We report the design, simulation, and measurement of a dual-band metamaterial absorber in the terahertz region. Theoretical and experimental results show that the absorber has two distinct and strong absorption points ne...
- The effect of hydrogen charging on Ln-based amorphous materials
[作者：Chuang, CP; Huang, JH; Dmowski, W; Liaw, PK; Li, R; Zhang, T; Ren, Y,期刊：Applied Physics Letters, 页码：241901-241901 , 文章类型： Article，,卷期：2009年95-24]
- In present work, the effects of hydrogen charging on Ln-based (Ln=La,Ce) bulk-metallic glasses (BMG) are studied. The (La0.5Ce0.5)(65)Al10Co25 were charged with hydrogen by an electrochemical method in an alkali solution...
- Liquid Ge2Sb2Te5 studied by extended x-ray absorption
[作者：Kolobov, AV; Fons, P; Krbal, M; Simpson, RE; Hosokawa, S; Uruga, T; Tanida, H; Tominaga, J,期刊：Applied Physics Letters, 页码：241902-241902 , 文章类型： Article，,卷期：2009年95-24]
- We report on x-ray absorption studies of the structure of the liquid phase of a prototypical phase-change material Ge2Sb2Te5. We demonstrate that the local structure of liquid Ge2Sb2Te5 is very similar to that of amorpho...
- Comprehensive doping and temperature studies of spin relaxation in InSb
[作者：Guzun, D; DeCuir, EA; Kunets, VP; Mazur, YI; Salamo, GJ; Murphy, SQ; Jayathilaka, PARD; Mishima, TD; Santos, MB,期刊：Applied Physics Letters, 页码：241903-241903 , 文章类型： Article，,卷期：2009年95-24]
- Time resolved pump-probe measurements of the spin relaxation rate in thick epilayers and bulk InSb have been carried out for a wide range of doping concentrations (intrinsic-2x10(18) cm(-3)) and temperatures (20 to 300 K...
- Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials
[作者：Wang, XJ; Puttisong, Y; Tu, CW; Ptak, AJ; Kalevich, VK; Egorov, AY; Geelhaar, L; Riechert, H; Chen, WM; Buyanova, IA,期刊：Applied Physics Letters, 页码：241904-241904 , 文章类型： Article，,卷期：2009年95-24]
- Optically detected magnetic resonance measurements are carried out to study formation of Ga interstitial-related defects in Ga(In)NAs alloys. The defects, which are among dominant nonradiative recombination centers that ...
- Effect of annealing on atomic ordering of amorphous ZrTaTiNbSi alloy
[作者：Yang, TH; Huang, RT; Wu, CA; Chen, FR; Gan, JY; Yeh, JW; Narayan, J,期刊：Applied Physics Letters, 页码：241905-241905 , 文章类型： Article，,卷期：2009年95-24]
- In this letter, we have reported on initial stages of atomic ordering in ZrTaTiNbSi amorphous films during annealing. The atomic ordering and structure evolution were studied in Zr17Ta16Ti19Nb22Si26 amorphous films as a ...
- Photoluminescence induced by thermal annealing in SrTiO3 thin film
[作者：Rho, J; Jang, S; Ko, YD; Kang, S; Kim, DW; Chung, JS; Kim, M; Han, M; Choi, E,期刊：Applied Physics Letters, 页码：241906-241906 , 文章类型： Article，,卷期：2009年95-24]
- We have grown SrTiO3 thin films by rf-sputtering and studied its photoluminescence (PL) property after postannealing treatments. While the as-grown film does not show any PL signal, visible frequency PL emissions are ind...
- MnSe phase segregation during heteroepitaxy of Mn doped Ga2Se3 on Si(001)
[作者：Lovejoy, TC; Yitamben, EN; Heald, SM; Ohuchi, FS; Olmstead, MA,期刊：Applied Physics Letters, 页码：241907-241907 , 文章类型： Article，,卷期：2009年95-24]
- Heteroepitaxial thin films of Mn-doped Ga2Se3 are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1-2 nm, after which oriented islands with flat tops are observed by scanning tunne...
- Effects of nanowire coalescence on their structural and optical properties on a local scale
[作者：Consonni, V; Knelangen, M; Jahn, U; Trampert, A; Geelhaar, L; Riechert, H,期刊：Applied Physics Letters, 页码：241910-241910 , 文章类型： Article，,卷期：2009年95-24]
- The effects of GaN nanowire coalescence have been investigated on a local scale by combining high-resolution transmission electron microscopy imaging with spatially resolved cathodoluminescence measurements. Coalescence ...
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