- Scanning tunneling microscope-cathodoluminescence measurement of the GaAs/AlGaAs heterostructure
[作者:Watanabe, K; Nakamura, Y; Ichikawa, M; Kuboya, S; Katayama, R; Onabe, K,期刊:Journal Of Vacuum Science & Technology B, 页码:1874-1880 , 文章类型: Article,,卷期:2009年27-4]
- The authors studied local optical properties of GaAs/AlGaAs heterostructure by scanning tunneling microscope-cathodoluminescence (STM-CL) spectroscopy, where low-energy (similar to 100 eV) electrons field emitted from ST...
- Violet light-emitting diodes grown on crack-free AlGaN templates
[作者:Wang, TW; Chen, NC; Lien, WC; Wu, MC; Shih, CF,期刊:Journal Of Vacuum Science & Technology B, 页码:1881-1885 , 文章类型: Article,,卷期:2009年27-4]
- This study investigates the violet light-emitting diodes (LEDs) grown on crack-free AlGaN templates, which were prepared on GaN and AlN nucleation layers (NLs) over sapphire substrates by metal-organic chemical-vapor dep...
- p-type behavior of nitrogen doped, lithium doped, and nitrogen-lithium codoped Zn0.11Mg0.89O thin films
[作者:Qiu, MX; Gu, XQ; Ye, ZZ; Lu, JG; He, HP; Zhang, YZ; Zhao, BH,期刊:Journal Of Vacuum Science & Technology B, 页码:1897-1900 , 文章类型: Article,,卷期:2009年27-4]
- N-doped, Li-doped, and Li-N doped Zn0.89Mg0.11O thin films have been prepared by pulsed laser deposition. Hall-effect measurements indicate that the doping technique plays an important role in the p-type behavior of ZnMg...
- n-type, p-type and semi-insulating ZnO:N thin film growth by metal organic chemical vapor deposition with NH3 doping
[作者:Zaidi, T; Melton, A; Fenwick, WE; Ferguson, I,期刊:Journal Of Vacuum Science & Technology B, 页码:1904-1908 , 文章类型: Article,,卷期:2009年27-4]
- p-type, n-type and semi-insulating ZnO:N thin films were successfully grown by metal organic chemical vapor deposition on c-plane sapphire using diethyl zinc and O-2 precursors, N-2 carrier gas, and NH3 as dopant. NH3 fl...
- Inductively coupled plasma etching of GaAs suspended photonic crystal cavities
[作者:Braive, R; Le Gratiet, L; Guilet, S; Patriarche, G; Lemaitre, A; Beveratos, A; Robert-Philip, I; Sagnes, I,期刊:Journal Of Vacuum Science & Technology B, 页码:1909-1914 , 文章类型: Article,,卷期:2009年27-4]
- The authors studied the dry-etching process by chlorine-based inductively coupled plasma for fabricating GaAs suspended photonic crystal cavities. To achieve low optical loss in such resonators, the photonic crystal hole...
- Feature filling modeling for step and flash imprint lithography
[作者:Chauhan, S; Palmieri, F; Bonnecaze, RT; Willson, CG,期刊:Journal Of Vacuum Science & Technology B, 页码:1926-1932 , 文章类型: Article,,卷期:2009年27-4]
- The authors analyze the feature filling phenomena for step and flash imprint lithography (SFIL) via diffusion of a gas, entrapped in the features, through liquid imprint resist. The model and simulation for the dynamics ...
- Evaluation of extreme-ultraviolet lithography mask absorber pattern on multilayer phase defect using extreme-ultraviolet microscope
[作者:Hamamoto, K; Sakaya, N; Hosoya, M; Kureishi, M; Ohkubo, R; Shoki, T; Nagarekawa, O; Kishimoto, J; Watanabe, T; Kinoshita, H,期刊:Journal Of Vacuum Science & Technology B, 页码:1938-1942 , 文章类型: Article,,卷期:2009年27-4]
- This article concerns the observation of phase defects in an extreme-ultraviolet lithography (EUVL) mask with an extreme-ultraviolet (EUV) microscope developed by the University of Hyogo. The influence of phase defects i...
- Effects of nitrogen doping of ZnO during or after deposition
[作者:Yen, TF; DiNezza, M; Haungs, A; Kim, SJ; Anderson, WA; Cartwright, AN,期刊:Journal Of Vacuum Science & Technology B, 页码:1943-1948 , 文章类型: Article,,卷期:2009年27-4]
- Effects of nitrogen doping of ZnO (ZnO:N) during deposition and after postdeposition annealing have been studied by optical techniques, electronic properties, and the application to metal-semiconductor-metal photodetecto...
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