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  • Platform for Controlled Supramolecular Nanoassembly
    [作者:Czolkos, I; Hannestad, JK; Jesorka, A; Kumar, R; Brown, T; Albinsson, B; Orwar, O,期刊:Nano Letters, 页码:2482-2486 , 文章类型: Letter,,卷期:2009年9-6]
  • We here present a two-dimensional (2D) micro/nano-fluidic technique where reactant-doped liquid-crystal films spread and mix on micro- and nanopatterned substrates. Surface-supported phospholipid monolayers are individua...
  • Nanoparticle Assemblies as Memristors
    [作者:Kim, TH; Jang, EY; Lee, NJ; Choi, DJ; Lee, KJ; Jang, JT; Choi, JS; Moon, SH; Cheon, J,期刊:Nano Letters, 页码:2229-2233 , 文章类型: Letter,,卷期:2009年9-6]
  • Recently a memristor (Chua, L. O. IEEE Trans. Circuit Theory 1971, 18, 507), the fourth fundamental passive circuit element, has been demonstrated as thin film device operations (Strukov, D. B.; Snider, G. S.; Stewart, D...
  • Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon
    [作者:Gao, L; Woo, RL; Liang, B; Pozuelo, M; Prikhodko, S; Jackson, M; Goel, N; Hudait, MK; Huffaker, DL; Goorsky, MS; Kodambaka, S; Hicks, RF,期刊:Nano Letters, 页码:2223-2228 , 文章类型: Letter,,卷期:2009年9-6]
  • Vertical indium phosphide nanowires have been grown epitaxially on silicon (111) by metalorganic vapor-phase epitaxy. Liquid indium droplets were formed in situ and used to catalyze deposition. For growth at 350 degrees ...
  • Self-Aligned Nanolithography in a Nanogap
    [作者:Lin, YC; Bai, JW; Huang, Y,期刊:Nano Letters, 页码:2234-2238 , 文章类型: Letter,,卷期:2009年9-6]
  • A self-aligned nanolithography approach is reported to form a nanoscale via hole in a nanogap. Field emission between two opposite electrodes of a nanogap is used to expose the polymer resist within the nanogap region. A...