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  • Electroluminescence from ZnO/Si-Nanotips Light-Emitting Diodes
    [作者:Hsieh, YP; Chen, HY; Lin, MZ; Shiu, SC; Hofmann, M; Chern, MY; Jia, XT; Yang, YJ; Chang, HJ; Huang, HM; Tseng, SC; Chen, LC; Chen, KH; Lin, CF; Liang, CT; Chen, YF,期刊:Nano Letters, 页码:1839-1843 , 文章类型: Letter,,卷期:2009年9-5]
  • A new and general approach to achieving efficient electrically driven light emission from a Si-based nano p-n junction array is introduced. A wafer-scale array of p-type silicon nanotips were formed by a single-step self...
  • Probing Flow Velocity with Silicon Nanowire Sensors
    [作者:Kim, DR; Lee, CH; Zheng, XL,期刊:Nano Letters, 页码:1984-1988 , 文章类型: Letter,,卷期:2009年9-5]
  • We report our experimental efforts to quantity the impact of fluidic and ionic transport on the conductance level of silicon nanowire (SiNW) sensors configured as field effect transistors (FETs). Specifically, the conduc...
  • Energy Dissipation in Graphene Field-Effect Transistors
    [作者:Freitag, M; Steiner, M; Martin, Y; Perebeinos, V; Chen, ZH; Tsang, JC; Avouris, P,期刊:Nano Letters, 页码:1883-1888 , 文章类型: Letter,,卷期:2009年9-5]
  • We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphen...