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  • Exposure of Epitaxial Graphene on SiC(0001) to Atomic Hydrogen
    [作者:Guisinger, NP; Rutter, GM; Crain, JN; First, PN; Stroscio, JA,期刊:Nano Letters, 页码:1462-1466 , 文章类型: Letter,,卷期:2009年9-4]
  • Graphene films on SiC exhibit coherent transport properties that suggest the potential for novel carbon-based nanoelectronics applications. Recent studies suggest that the role of the interface between single layer graph...
  • Intrinsic Response of Graphene Vapor Sensors
    [作者:Dan, YP; Lu, Y; Kybert, NJ; Luo, ZT; Johnson, ATC,期刊:Nano Letters, 页码:1472-1475 , 文章类型: Letter,,卷期:2009年9-4]
  • Graphene is a two-dimensional material with extremely favorable chemical sensor properties. Conventional nanolithography typically leaves a resist residue on the graphene surface, whose impact on the sensor characteristi...
  • Properties of One-Dimensional Molybdenum Nanowires in a Confined Environment
    [作者:Meunier, V; Muramatsu, H; Hayashi, T; Kim, YA; Shimamoto, D; Terrones, H; Dresselhaus, MS; Terrones, M; Endo, M; Sumpter, BG,期刊:Nano Letters, 页码:1487-1492 , 文章类型: Letter,,卷期:2009年9-4]
  • The atomistic mechanism for the self-assembly of molybdenum into one-dimensional metallic nanowires; in a confined environment such as a carbon nanotube is investigated using quantum mechanical calculations. We find that...
  • Carbon Nanomaterials as Catalysts for Hydrogen Uptake and Release in NaAlH4
    [作者:Berseth, PA; Harter, AG; Zidan, R; Blomqvist, A; Araujo, CM; Scheicher, RH; Ahuja, R; Jena, P,期刊:Nano Letters, 页码:1501-1505 , 文章类型: Letter,,卷期:2009年9-4]
  • A synergistic approach involving experiment and first-principles theory not only shows that carbon nanostructures can be used as catalysts for hydrogen uptake and release in complex metal hydrides such as sodium alanate,...
  • Method for Suppression of Stacking Faults in Wurtzite III-V Nanowires
    [作者:Shtrikman, H; Popovitz-Biro, R; Kretinin, A; Houben, L; Heiblum, M; Bukala, M; Galicka, M; Buczko, R; Kacman, P,期刊:Nano Letters, 页码:1506-1510 , 文章类型: Letter,,卷期:2009年9-4]
  • The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by ...
  • Vertical Epitaxial Wire-on-Wire Growth of Ge/Si on Si(100) Substrate
    [作者:Shimizu, T; Zhang, Z; Shingubara, S; Senz, S; Gosele, U,期刊:Nano Letters, 页码:1523-1526 , 文章类型: Letter,,卷期:2009年9-4]
  • Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed ...
  • Evolution of Dendritic Platinum Nanosheets into Ripening-Resistant Holey Sheets
    [作者:Song, YJ; Hickner, MA; Challa, SR; Dorin, RM; Garcia, RM; Wang, HR; Jiang, YB; Li, P; Qiu, Y; van Swol, F; Medforth, CJ; Miller, JE; Nwoga, T; Kawahara, K; Li, W; Shelnutt, JA,期刊:Nano Letters, 页码:1534-1539 , 文章类型: Letter,,卷期:2009年9-4]
  • Under electron-beam irradiation, dendritic platinum nanosheets; structurally evolve into metastable "holey" nanosheets. Monte Carlo simulations of this structural transformation agree well with electron microscope images...