- Improved characterization of Fourier transform infrared spectra analysis for post-etched ultra-low-kappa SiOCH dielectric using chemometric methods
[作者:Oszinda, T; Beyer, V; Schaller, M; Fischer, D; Bartsch, C; Schulz, SE,期刊:Journal Of Vacuum Science & Technology B, 页码:521-526 , 文章类型: Article,,卷期:2009年27-1]
- The structural changes due to post-ash and post-ash treatments on chemical vapor deposited ultra-low-kappa (ULK) SiOCH dielectric films were studied by Auger electron spectroscopy (AES) and Fourier transform infrared spe...
- Study on the characteristics of toluene-tetraethoxysilane hybrid plasma-polymer thin films
[作者:Cho, SJ; Bae, IS; Lee, S; Jung, D; Choi, WS; Boo, JH,期刊:Journal Of Vacuum Science & Technology B, 页码:527-530 , 文章类型: Article,,卷期:2009年27-1]
- This study investigated the interaction of varied plasma power with ultralow-k toluene-tetraethoxysilane (TEOS) hybrid plasma-polymer thin films, as well as changing electrical and mechanical properties with varied radio...
- Gas sensing materials based on TiO2 thin films
[作者:Iftimie, N; Luca, D; Lacomi, F; Girtan, M; Mardare, D,期刊:Journal Of Vacuum Science & Technology B, 页码:538-541 , 文章类型: Article,,卷期:2009年27-1]
- TiO2 thin films were prepared by spray pyrolysis using a solution of titanium tetrachloride and ethyl alcohol. The deposition was performed onto different substrates (silicon, quartz, glass) maintained at the same temper...
- Initial oxidation of Si(110) at studied by real-time synchrotron-radiation x-ray photomission spectroscopy
[作者:Suemitsu, M; Yamamoto, Y; Togashi, H; Enta, Y; Yoshigoe, A; Teraoka, Y,期刊:Journal Of Vacuum Science & Technology B, 页码:547-550 , 文章类型: Article,,卷期:2009年27-1]
- Initial oxidation processes of the Si(110) surface and the chemical bonding states of silicon atoms in the initial oxides have been investigated by using real-time synchrotron-radiation photoemission spectroscopy. Time e...
- Identification of interfacial defects in high-k gate stack films by spectroscopic ellipsometry
[作者:Price, J; Bersuker, G; Lysaght, PS,期刊:Journal Of Vacuum Science & Technology B, 页码:310-312 , 文章类型: Article,,卷期:2009年27-1]
- The authors present a spectroscopic study of defects in HfO2, Hf0.8Si0.2O2, Al2O3, and SiO2 dielectric gate stacks. The results indicate that all optically observable dielectric-related defects are associated with the in...
- Trap related dielectric absorption of HfSiO films in metal-insulator-semiconductor structures
[作者:Kerber, M; Fachmann, C; Heitmann, J; Kudelka, S; Schroder, U; Reisinger, H,期刊:Journal Of Vacuum Science & Technology B, 页码:321-324 , 文章类型: Article,,卷期:2009年27-1]
- Dielectric absorption in HfSiO has been investigated with transient floating potential measurements. This has been achieved by peripheral component interconnect-based recording after the application of conditioning pulse...
- InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases
[作者:Cico, K; Kuzmik, J; Liday, J; Husekova, K; Pozzovivo, G; Carlin, JF; Grandjean, N; Pogany, D; Vogrincic, P; Frohlich, K,期刊:Journal Of Vacuum Science & Technology B, 页码:218-222 , 文章类型: Article,,卷期:2009年27-1]
- Al2O3 thin films were deposited by a metal organic chemical vapour deposition on InAIN/GaN heterostructures using Ar or NH3 as a carrier gas. Effects of NH3 and Ar carrier gases on the electrical and structural propertie...
- Impact of a gamma-Al2O3(001) barrier on LaAlO3 metal-oxide-semiconductor capacitor electrical properties
[作者:Becerra, L; Merckling, C; El-Kazzi, M; Baboux, N; Vilquin, B; Saint-Girons, G; Plossu, C; Hollinger, G,期刊:Journal Of Vacuum Science & Technology B, 页码:384-388 , 文章类型: Article,,卷期:2009年27-1]
- Amorphous LaAlO3, high-kappa oxides were grown in a molecular beam epitaxy reactor on p-Si(001) employing a thin gamma-Al2O3 epitaxial layer as buffer. Interfaces are free of SiO2 and silicates and remain abrupt even aft...
- Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in HfO2/Dy2O3 gate stacks grown on Ge (100) substrates
[作者:Rahman, MS; Evangelou, EK; Androulidakis, II; Dimoulas, A; Mavrou, G; Tsipas, P,期刊:Journal Of Vacuum Science & Technology B, 页码:439-442 , 文章类型: Article,,卷期:2009年27-1]
- Germanium is a very promising material and has an extra advantage due to its higher mobility than silicon. At the same time, high-kappa gate dielectrics such as HfO2 are already used for the replacement of SiO2 in advanc...
- Frequency dispersion and dielectric relaxation of La2Hf2O7
[作者:Zhao, CZ; Taylor, S; Werner, M; Chalker, PR; Gaskell, JM; Jones, AC,期刊:Journal Of Vacuum Science & Technology B, 页码:333-337 , 文章类型: Article,,卷期:2009年27-1]
- Thin films of La2Hf2O7 have been deposited by liquid injection atomic layer deposition and post-deposition annealed at 900 degrees C. The dielectric frequency dispersion was more serious for thinner films which is attrib...
- Analytical modeling of tunneling current through SiO2-HfO2 stacks in metal oxide semiconductor structures
[作者:Coignus, J; Clerc, R; Leroux, C; Reimbold, G; Ghibaudo, G; Boulanger, F,期刊:Journal Of Vacuum Science & Technology B, 页码:338-345 , 文章类型: Article,,卷期:2009年27-1]
- This work presents an original approach to model direct tunneling current through high-K dielectrics including SiO2 interfacial oxide from electron inversion layers. Quantum confinement is taken into account by means of ...
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