- Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs
[作者:Wang, L; Wang, J; Gao, C; Hu, J; Li, P; Li, WJ; Yang, SHY,期刊:IEEE Transactions on Computers, 页码:492-498 , 文章类型: Article,,卷期:2009年56-3]
- This paper presents a physical description of two specific aspects in drain-extended MOS transistors, i.e., quasi-saturation and impact-ionization effects. The 2-D device simulator Medici provides the physical insights, ...
- Comparison of Long-Wave Infrared Quantum-Dots-in-a-Well and Quantum-Well Focal Plane Arrays
[作者:Andrews, JR; Restaino, SR; Vandervelde, TE; Brown, JS; Sharma, YD; Lee, SJ; Teare, SW; Reisinger, A; Sundaram, M; Krishna, S,期刊:IEEE Transactions on Computers, 页码:512-516 , 文章类型: Article,,卷期:2009年56-3]
- This paper reports on a comparison between a commercially available quantum-well infrared focal plane array (FPA) and a custom quantum-dot (QD)-in-a-well (DWELL) infrared FPA in the long-wave infrared (LWIR). The DWELL d...
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