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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共78条记录   Botulinum toxin detection using AlGaN/GaN high electron mobility transistors - art. no. 262101 [作者：Wang, YL; Chu, BH; Chen, KH; Chang, CY; Lele, TP; Tseng, Y; Pearton, SJ; Ramage, J; Hooten, D; Dabiran, A; Chow, PP; Ren, F,期刊：Applied Physics Letters, 页码：62101-62101 , 文章类型： Article，,卷期：2008年93-26] Antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN/GaN ... Drift current dominated terahertz radiation from InN at low-density excitation - art. no. 262102 [作者：Lin, KI; Tsai, JT; Wang, TS; Hwang, JS; Chen, MC; Chi, GC,期刊：Applied Physics Letters, 页码：62102-62102 , 文章类型： Article，,卷期：2008年93-26] This letter investigates the polarity of terahertz radiation from indium nitride (InN) excited by femtosecond optical pulses wherein a central wavelength of around 790 nm is measured. The InN epilayers are grown by metal... Electron hole-phonon interaction, correlation of structure, and conductivity in single crystal La0.9Sr0.1FeO3-delta - art. no. 262103 [作者：Braun, A; Richter, J; Harvey, AS; Erat, S; Infortuna, A; Frei, A; Pomjakushina, E; Mun, BS; Holtappels, P; Vogt, U; Conder, K; Gauckler, LJ; Graule, T,期刊：Applied Physics Letters, 页码：62103-62103 , 文章类型： Article，,卷期：2008年93-26] The conductivity and structure of the hole-doped polaron conductor La0.9Sr0.1FeO3-delta are reported for elevated temperatures. The conductivity increases exponentially with temperature to a maximum and decreases for T>7... Influence of the illumination on weak antilocalization in an AlxGa1-xN/GaN heterostructure with strong spin-orbit coupling - art. no. 262104 [作者：Zhou, WZ; Lin, T; Shang, LY; Sun, L; Gao, KH; Zhou, YM; Yu, G; Tang, N; Han, K; Shen, B; Guo, SL; Gui, YS; Chu, JH,期刊：Applied Physics Letters, 页码：62104-62104 , 文章类型： Article，,卷期：2008年93-26] The weak antilocalization effects of the two-dimensional electron gas in a high mobility AlxGa1-xN/GaN heterostructure have been investigated by means of magnetotransport measurements before and after illumination. The z... Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect - art. no. 262105 [作者：Brown, GF; Ager, JW; Walukiewicz, W; Schaff, WJ; Wu, J,期刊：Applied Physics Letters, 页码：62105-62105 , 文章类型： Article，,卷期：2008年93-26] The surface contribution to the electrical transport properties of InN was directly measured and modulated by the electrolyte gated Hall effect. Undoped and Mg-doped films show different behaviors that can be effectively... In situ strain measurements on GaN/AlGaN Schottky diodes with variable bias - art. no. 262106 [作者：Mahadik, NA; Qadri, SB; Rao, MV,期刊：Applied Physics Letters, 页码：62106-62106 , 文章类型： Article，,卷期：2008年93-26] In situ high resolution x-ray diffraction measurements were performed on AlGaN/GaN Schottky diodes under variable bias conditions. The results show a linear variation in strain for the GaN channel with bias. For forward ... Very large anisotropy in the dc conductivity of epitaxial VO2 thin films grown on (011) rutile TiO2 substrates - art. no. 262107 [作者：Lu, JW; West, KG; Wolf, SA,期刊：Applied Physics Letters, 页码：62107-62107 , 文章类型： Article，,卷期：2008年93-26] In this letter, we reported a very large anisotropy in dc conductivity of epitaxial VO2 thin films deposited on a (011) TiO2 substrate. The VO2 film grew epitaxially on TiO2 and x-ray diffraction showed that VO2 had the ... Spin-wave confinement in rolled-up ferromagnetic tubes - art. no. 262501 [作者：Mendach, S; Podbielski, J; Topp, J; Hansen, W; Heitmann, D,期刊：Applied Physics Letters, 页码：62501-62501 , 文章类型： Article，,卷期：2008年93-26] We investigate the spin-wave dispersion in rolled-up Permalloy microtubes based on self-rolling strained semiconductor layers. Using microwave absorption spectroscopy we find that these structures exhibit a characteristi... Substrate orientation dependence of ferromagnetism in (Ga,Mn)As - art. no. 262502 [作者：Wilson, MJ; Xiang, G; Sheu, BL; Schiffer, P; Samarth, N; May, SJ; Bhattacharya, A,期刊：Applied Physics Letters, 页码：62502-62502 , 文章类型： Article，,卷期：2008年93-26] We describe a comprehensive study of the properties of both ordered and random alloy Ga1-xMnxAs grown on (001), (311), (201), and (110) GaAs substrates. Magnetization measurements show a systematic variation in the Curie... Fraunhofer regime of operation for superconducting quantum interference filters - art. no. 262503 [作者：Shadrin, AV; Constantinian, KY; Ovsyannikov, GA; Shitov, SV; Soloviev, II; Kornev, VK; Mygind, J,期刊：Applied Physics Letters, 页码：62503-62503 , 文章类型： Article，,卷期：2008年93-26] Series arrays of superconducting quantum interference devices (SQUIDs) with incommensurate loop areas, so-called superconducting quantum interference filters (SQIFs), are investigated in the kilohertz and the gigahertz f... High domain wall velocities induced by current in ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy - art. no. 262504 [作者：Moore, TA; Miron, IM; Gaudin, G; Serret, G; Auffret, S; Rodmacq, B; Schuhl, A; Pizzini, S; Vogel, J; Bonfim, M,期刊：Applied Physics Letters, 页码：62504-62504 , 文章类型： Article，,卷期：2008年93-26] Current-induced domain wall (DW) displacements in an array of ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy have been directly observed by wide field Kerr microscopy. DWs in all wires in the array wer... Effects of donor doping on Ga1-xMnxAs - art. no. 262505 [作者：Cho, YJ; Yu, KM; Liu, X; Walukiewicz, W; Furdyna, JK,期刊：Applied Physics Letters, 页码：62505-62505 , 文章类型： Article，,卷期：2008年93-26] We investigate the effect compensating Mn acceptors in Ga1-xMnxAs films by doping with Si donors. For Ga1-xMnxAs with low Mn content (e.g., x < 0.033), doping by Si decreases the Curie temperature T-C compared to undoped... Raman spectroscopy of (K,Na)NbO3 and (K,Na)(1-x)LixNbO3 - art. no. 262901 [作者：Trodahl, HJ; Klein, N; Damjanovic, D; Setter, N; Ludbrook, B; Rytz, D; Kuball, M,期刊：Applied Physics Letters, 页码：62901-62901 , 文章类型： Article，,卷期：2008年93-26] We report Raman spectroscopy in all four phases of a (K0.5+delta Na0.5-delta)NbO3 (delta similar to 0.03) crystal and ((K0.5+delta Na0.5-delta)(1-x)Li-x)NbO3 for x=0.02 and 0.03. The phase transitions in the Li-free crys... The radial distribution of defects in a percolation path - art. no. 262902 [作者：Li, X; Tung, CH; Pey, KL,期刊：Applied Physics Letters, 页码：62902-62902 , 文章类型： Article，,卷期：2008年93-26] Our results show that the defect distribution within a nanometer size percolation path is nonuniform. The defects, which are shown as oxygen vacancies, spread out radially from the center of the percolation path. The con... Cation ordering in epitaxial lead zirconate titanate films - art. no. 262903 [作者：Zhang, LC; Vasiliev, AL; Misirlioglu, IB; Ramesh, R; Alpay, SP; Aindow, M,期刊：Applied Physics Letters, 页码：62903-62903 , 文章类型： Article，,卷期：2008年93-26] Electron diffraction and atom location by channeling enhanced microanalysis were used to show that epitaxial PbZr0.2Ti0.8O3 films grown on (001) SrTiO3 substrates by pulsed laser deposition exhibit long-range order on th... Domain control in ferroelectric nanodots through surface charges - art. no. 262904 [作者：Wang, J; Kamlah, M,期刊：Applied Physics Letters, 页码：62904-62904 , 文章类型： Article，,卷期：2008年93-26] Stable polarization distributions of freestanding ferroelectric nanodots with different surface charges are investigated numerically using a phase field model. The out-of-plane components of polarizations are found to be...