- Surface structure characterization of nanodiamond thin film for electronic field emission applications
[作者:Xie, FY; Xie, WG; Chen, J; Liu, X; Lu, DY; Zhang, WH,期刊:Journal Of Vacuum Science & Technology B, 页码:102-105 , 文章类型: Article,,卷期:2008年26-1]
- The nanodiamond thin film is deposited on a single crystal silicon substrate by a dip-coating technique from the pretreated nanodiamond suspension. The surface structures of the as-prepared thin film and the annealed sam...
- Low-temperature c-axis oriented growth of nanocrystalline ZnO thin films on Si substrates by plasma assisted pulsed laser deposition
[作者:Shao, J; Shen, YQ; Sun, J; Xu, N; Yu, D; Lu, YF; Wu, JD,期刊:Journal Of Vacuum Science & Technology B, 页码:214-218 , 文章类型: Article,,卷期:2008年26-1]
- Nanocrystalline zinc oxide (nc-ZnO) thin films with c-axis orientation were deposited on Si (100) substrates at a temperature lower than 100 degrees C by plasma assisted pulsed laser deposition from metallic zinc. Oxygen...
- Mechanistic study of plasma damage of low k dielectric surfaces
[作者:Bao, J; Shi, H; Liu, J; Huang, H; Ho, PS; Goodner, MD; Moinpour, M; Kloster, GM,期刊:Journal Of Vacuum Science & Technology B, 页码:219-226 , 文章类型: Article,,卷期:2008年26-1]
- Plasma damage to low k dielectric materials was investigated from a mechanistic point of view. Low k dielectric films were treated by Ar, O-2, N-2, N-2/H-2, and H-2 plasmas in a standard reactive ion etching chamber and ...
- Structural and electrical investigation of laser annealed (Pb,Sr)TiO3 thin films
[作者:Wang, JL; Lai, YS; Liou, SC; Chiou, BS; Jan, CK; Cheng, HC,期刊:Journal Of Vacuum Science & Technology B, 页码:41-46 , 文章类型: Article,,卷期:2008年26-1]
- Material and electrical characteristics of (Pb,Sr)TiO3 (PSrT) films irradiated by various laser pulses and laser fluences are investigated in this work. Enhanced crystallinity can be obtained after excimer laser annealin...
- Optical properties of n-doped Ga1-xMnxN epitaxial layers grown by metal-organic chemical-vapor deposition in mid and far (5-50 mu m) IR range
[作者:Weerasekara, AB; Hu, ZG; Dietz, N; Perera, AGU; Asghar, A; Kane, MH; Strassburg, M; Ferguson, IT,期刊:Journal Of Vacuum Science & Technology B, 页码:52-55 , 文章类型: Article,,卷期:2008年26-1]
- Optical properties of n-doped (Si) hexagonal Ga1-xMnxN films (x=0.015) grown by metal-organic chemical-vapor deposition (MOCVD) on c-plane sapphire substrates have been studied by infrared reflectance spectroscopy. The e...
- GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers
[作者:Yu, SQ; Cao, Y; Johnson, SR; Zhang, YH; Huang, YZ,期刊:Journal Of Vacuum Science & Technology B, 页码:56-61 , 文章类型: Article,,卷期:2008年26-1]
- Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 mu m cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2....
- Facet formation and lateral overgrowth of selective Ge epitaxy on SiO2-patterned Si(001) substrates
[作者:Park, JS; Bai, J; Curtin, M; Carroll, M; Lochtefeld, A,期刊:Journal Of Vacuum Science & Technology B, 页码:117-121 , 文章类型: Article,,卷期:2008年26-1]
- Faceting and lateral overgrowth have been investigated for Ge selectively grown on Si(001) substrates in trench regions bound by SiO2 sidewalls. In wet-etched large trenches with sloped sidewalls, Ge faceting behavior wa...
- Electrical conductivity of ultra-thin silicon nanowires
[作者:Rochdi, N; Tonneau, D; Jandard, F; Dallaporta, H; Safarov, V; Gautier, J,期刊:Journal Of Vacuum Science & Technology B, 页码:159-163 , 文章类型: Article,,卷期:2008年26-1]
- The authors present results on fabricating ultra-thin silicon nanowires on insulators and characterizing their electrical conductivity. The silicon nanowires were fabricated by atomic force microscopy lithography on ultr...
- Erbium silicide formation and its contact properties on Si(100)
[作者:Huang, W; Ru, GP; Jiang, YL; Qu, XP; Li, BZ; Liu, R; Lu, F,期刊:Journal Of Vacuum Science & Technology B, 页码:164-170 , 文章类型: Article,,卷期:2008年26-1]
- Erbium silicide formation and its contact properties on Si(100) have been studied in this work. With sputtering and rapid thermal annealing, the deposited Er was found to react with the Si(100) substrate upon 300 degrees...
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