- Comparison between GaN thin film grown by femtosecond and nanosecond pulsed laser depositions
[作者:Tong, XL; Jiang, DS; Liu, L; Dai, H,期刊:Journal Of Vacuum Science & Technology B, 页码:1398-1403 , 文章类型: Article,,卷期:2008年26-4]
- GaN thin films have been grown by femtosecond and nanosecond pulsed laser depositions (PLDs), respectively. X-ray diffraction, atomic force microscopy, micro-Raman spectroscopy, fluorescence spectra, scanning electronic ...
- Surface roughness generated by plasma etching processes of silicon
[作者:Martina, M; Cunge, G,期刊:Journal Of Vacuum Science & Technology B, 页码:1281-1288 , 文章类型: Article,,卷期:2008年26-4]
- The authors used atomic force microscopy to analyze the roughness generated on c-Si (100) surfaces when etched in high-density plasmas over a wide range of conditions (pressure, rf power) using SF6, CF4, Cl-2, and HBr ch...
- System-level line-edge roughness limits in extreme ultraviolet lithography
[作者:Naulleau, PP; Niakoula, D; Zhang, GJ,期刊:Journal Of Vacuum Science & Technology B, 页码:1289-1293 , 文章类型: Article,,卷期:2008年26-4]
- As critical dimensions shrink, line-edge roughness (LER) and linewidth roughness become of increasing concern. Traditionally, LER is viewed as a resist-limited effect; however, as critical dimensions shrink and LER requi...
- A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application
[作者:Kim, J; Kwon, S; Hong, Y; Song, I; Ju, B,期刊:Journal Of Vacuum Science & Technology B, 页码:1363-1367 , 文章类型: Article,,卷期:2008年26-4]
- The authors have developed a thermocompressive bonding method using a sputtered Au layer and applied it to the coplanar waveguide (CPW) package. The bonding temperature is 350 degrees C, the bonding pressure is 63 MPa, a...
- Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density
[作者:Ewing, DJ; Derenge, MA; Shah, PB; Lee, U; Zheleva, TS; Jones, KA,期刊:Journal Of Vacuum Science & Technology B, 页码:1368-1372 , 文章类型: Article,,卷期:2008年26-4]
- The electrical characteristics of AlGaN/GaN heterostructures and GaN Schottky diodes were correlated with dislocations and other material defects. GaN epitaxial films were grown using conventional metal organic chemical ...
- Effect of contact metals on the piezoelectric properties of aluminum nitride thin films
[作者:Harman, J; Kabulski, A; Pagan, VR; Famouri, P; Kasarla, KR; Rodak, LE; Hensel, JP; Korakakis, D,期刊:Journal Of Vacuum Science & Technology B, 页码:1417-1419 , 文章类型: Article,,卷期:2008年26-4]
- The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top el...
- Highly reliable growth process of carbon nanowalls using radical injection plasma-enhanced chemical vapor deposition
[作者:Kondo, S; Hori, M; Yamakawa, K; Den, S; Kano, H; Hiramatsu, M,期刊:Journal Of Vacuum Science & Technology B, 页码:1294-1300 , 文章类型: Article,,卷期:2008年26-4]
- Two-dimensional carbon nanostructures, carbon nanowalls (CNWs), were fabricated on a Si substrate using radical injection plasma-enhanced chemical vapor deposition, employing fluorocarbon (C2F6) and hydrogen (H-2) mixtur...
- Stable field emission from screen-printed ZnO-tetrapod emitters
[作者:Hou, K; Li, C; Lei, W; Zhang, XB; Qu, K; Yang, XX; Zhao, ZW; Wang, BP,期刊:Journal Of Vacuum Science & Technology B, 页码:1305-1308 , 文章类型: Article,,卷期:2008年26-4]
- This article describes a study on field emission properties of ZnO tetrapods, which were synthesized by rapid heating metal zinc pellets at 900 degrees C in air. A diode configuration with a screen-printed cathode was us...
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