- Low-field and high-field electron transport in zinc blende InN - art. no. 022102
[作者:Polyakov, VM; Schwierz, F; Fuchs, F; Furthmuller, J; Bechstedt, F,期刊:Applied Physics Letters, 页码:22102-22102 , 文章类型: Article,,卷期:2009年94-2]
- We report on the electron transport in zinc blende InN simulated by the ensemble Monte Carlo method. To obtain the relevant band structure parameters, ab initio calculations have been carried out. Then, Monte Carlo trans...
- Infrared detectors based on InGaAsN/GaAs intersubband transitions - art. no. 022103
[作者:Duboz, JY; Hugues, M; Damilano, B; Nedelcu, A; Bois, P; Kheirodin, N; Julien, FH,期刊:Applied Physics Letters, 页码:22103-22103 , 文章类型: Article,,卷期:2009年94-2]
- InGaAsN/GaAs multiquantum well structures have been grown by molecular beam epitaxy with 1% nitrogen in the well. Intersubband transitions have been observed in the infrared region by transmission spectroscopy. Infrared ...
- Growth and characterization of stable SrO-terminated SrTiO3 surfaces - art. no. 022901
[作者:Radovic, M; Lampis, N; Granozio, FM; Perna, P; Ristic, Z; Salluzzo, M; Schleputz, CM; di Uccio, US,期刊:Applied Physics Letters, 页码:22901-22901 , 文章类型: Article,,卷期:2009年94-2]
- A simple technique for the growth of SrO-terminated SrTiO3 surfaces is reported. High quality SrTiO3 epitaxial films were grown by reflection high energy electron diffraction assisted pulsed laser deposition on suitably ...
- Study of efficient and stable organic light-emitting diodes with 2-methyl-9,10-di(2-naphthyl)anthracene as hole-transport material by admittance spectroscopy - art. no. 023306
[作者:Ho, MH; Hsieh, MT; Lin, KH; Chen, TM; Chen, JF; Chen, CH,期刊:Applied Physics Letters, 页码:23306-23306 , 文章类型: Article,,卷期:2009年94-2]
- An organic light-emitting device with enhanced efficiency sby employing 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) as hole-transport material (HTM) has been developed. The admittance spectroscopy studies indicate that...
- Electronic structure of In2O3 from resonant x-ray emission spectroscopy - art. no. 022105
[作者:Piper, LFJ; DeMasi, A; Cho, SW; Smith, KE; Fuchs, F; Bechstedt, F; Korber, C; Klein, A; Payne, DJ; Egdell, RG,期刊:Applied Physics Letters, 页码:22105-22105 , 文章类型: Article,,卷期:2009年94-2]
- The valence and conduction band structures of In2O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K-edge resonant x-ray emission spectroscopy, and O K-edge x-ray absorption sp...
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