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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共185条记录   Damage evolution in GaN under MeV heavy ion implantation [作者：Gao, Y; Xue, JM; Zhang, DZ; Wang, ZL; Lan, CN; Yan, S; Wang, YG; Xu, FJ; Shen, B; Zhang, YW,期刊：Journal Of Vacuum Science & Technology B, 页码：2342-2346 , 文章类型： Article，,卷期：2009年27-6] Damage evaluation processes in patterned GaN implanted by 3 MeV Au2+ ions were investigated as a function of ion fluences and annealing temperatures. Surface swelling was observed by using atomic force microscopy and the... Focused-ion beam fabrication of nanometer orifices for leak detection [作者：Firpo, G; Repetto, L; de Mongeot, FB; Valbusa, U,期刊：Journal Of Vacuum Science & Technology B, 页码：2347-2350 , 文章类型： Article，,卷期：2009年27-6] The leak devices most frequently used to calibrate leak-detection instruments are permeation leaks. These devices are very sensitive to temperature and can only be used with helium. The physical-leak types that could ove... HBr based inductively coupled plasma etching of high aspect ratio nanoscale trenches in InP: Considerations for photonic applications [作者：Sultana, N; Zhou, W; LaFave, TP; MacFarlane, DL,期刊：Journal Of Vacuum Science & Technology B, 页码：2351-2356 , 文章类型： Article，,卷期：2009年27-6] Pure HBr based inductively coupled plasma vertical, anisotropic etching provides high aspect ratio (20-40) nanoscale trenches in InP at 165 degrees C processing temperatures. Since these temperatures are comparatively lo... Measuring interface electrostatic potential and surface charge in a scanning electron microscope [作者：Sychugov, I; Nakayama, Y; Mitsuishi, K,期刊：Journal Of Vacuum Science & Technology B, 页码：2357-2360 , 文章类型： Article，,卷期：2009年27-6] A novel method for electrostatic potential measurements at the interface is described. It involves placing a two-dimensional grid below the sample and observing it in a scanning electron microscope. Primary electron beam... Advanced silicon processing for active planar photonic devices [作者：Shearn, M; Diest, K; Sun, XK; Zadok, A; Atwater, H; Yariv, A; Scherer, A,期刊：Journal Of Vacuum Science & Technology B, 页码：3180-3182 , 文章类型： Article，,卷期：2009年27-6] Using high quality, anisotropically etched Si waveguides bonded to InGaAsP, the authors demonstrate a hybrid laser, whose optical profile overlaps both Si and III-V regions. Continuous wave laser operation was obtained u... Design of a multiple-electron-beam imaging technique for surface inspection [作者：Luo, T; Khursheed, A; Osterberg, M; Hoang, H,期刊：Journal Of Vacuum Science & Technology B, 页码：3256-3260 , 文章类型： Article，,卷期：2009年27-6] This article presents a multiple-electron-beam imaging technique, which is able to simultaneously process images from multiple scanning sources. The proposal is based on the detection of wide-angle BSEs, whose spectrum i... Void-free filling of spin-on dielectric in 22 nm wide ultrahigh aspect ratio Si trenches [作者：Trivedi, K; Floresca, C; Kim, S; Kim, H; Kim, D; Kim, J; Kim, MJ; Hu, W,期刊：Journal Of Vacuum Science & Technology B, 页码：3145-3148 , 文章类型： Article，,卷期：2009年27-6] The authors demonstrate fabrication of ultrahigh aspect ratio nanotrenches, made by nanoimprint lithography and dimension reduction, as test bed shallow trench isolation structures for the 22 nm semiconductor node. Polys... Subsurface damage from helium ions as a function of dose, beam energy, and dose rate [作者：Livengood, R; Tan, S; Greenzweig, Y; Notte, J; McVey, S,期刊：Journal Of Vacuum Science & Technology B, 页码：3244-3249 , 文章类型： Article，,卷期：2009年27-6] In recent years, helium ion microscopy has produced high resolution images with novel contrast mechanisms. However, when using any charged particle beam, one must consider the potential for sample damage. In this article... Nanoimprint lithography stamp modification utilizing focused ion beams [作者：Wanzenboeck, HD; Waid, S; Bertagnolli, E; Muehlberger, M; Bergmair, I; Schoeftner, R,期刊：Journal Of Vacuum Science & Technology B, 页码：2679-2685 , 文章类型： Article，,卷期：2009年27-6] Nanoimprint lithography (NIL) has been established as a high-throughput technique to fabricate sub-25-nm patterns at a low cost. The fabrication of NIL templates with features in the submicrometer range is currently a bo... Ion beam sharpening of diamond tools having small apex angle without facet and ripple formations [作者：Nagase, T; Kato, H; Pahlovy, SA; Miyamoto, I; Nakamura, Y,期刊：Journal Of Vacuum Science & Technology B, 页码：2686-2690 , 文章类型： Article，,卷期：2009年27-6] The sharpening of diamond tools with small apex angles by low energy (1.0 keV) ion beam faces great challenges because of facet formation at the cutting edge of the tools. Adding to the problem is the formation of ripple... Fabrication of complementary metal-oxide-semiconductor integrated nanomechanical devices by ion beam patterning [作者：Rius, G; Llobet, J; Borrise, X; Mestres, N; Retolaza, A; Merino, S; Perez-Murano, F,期刊：Journal Of Vacuum Science & Technology B, 页码：2691-2697 , 文章类型： Article，,卷期：2009年27-6] The authors present a novel approach to fabricate nanomechanical devices integrated into complementary metal-oxide-semiconductor (CMOS) circuits. It is based on focused ion beam patterning using two different processes: ... Evaluations of the hopping growth characteristics on three-dimensional nanostructure fabrication using focused ion beam [作者：Kometani, R; Warisawa, S; Ishihara, S,期刊：Journal Of Vacuum Science & Technology B, 页码：2698-2701 , 文章类型： Article，,卷期：2009年27-6] Hopping growth characteristics were examined to clarify the growth mechanism of three-dimensional nanostructures fabricated using focused-ion-beam chemical-vapor deposition (FIB-CVD). In this study, the gas density distr... Charged particle nanopatterning [作者：Platzgummer, E; Loeschner, H,期刊：Journal Of Vacuum Science & Technology B, 页码：2707-2710 , 文章类型： Article，,卷期：2009年27-6] Charged particle nanopatterning techniques based on electron and ion multibeam projection techniques are finding increased industrial interest for the fabrication of leading-edge complex masks, nanoimprint templates, and... Evaluation of chamber contamination in a scanning electron microscope [作者：Roediger, P; Wanzenboeck, HD; Hochleitner, G; Bertagnolli, E,期刊：Journal Of Vacuum Science & Technology B, 页码：2711-2717 , 文章类型： Article，,卷期：2009年27-6] In any scanning electron microscope (SEM) organic contamination of the vacuum chamber leads to undesired material deposition resulting in artifacts in imaging or compromises focused electron beam induced processes like e... Grazing incident small angle x-ray scattering: A metrology to probe nanopatterned surfaces [作者：Hofmann, T; Dobisz, E; Ocko, BM,期刊：Journal Of Vacuum Science & Technology B, 页码：3238-3243 , 文章类型： Article，,卷期：2009年27-6] Grazing incident small angle x-ray scattering (GISAXS) and transmission small angle x-ray scattering studies have been carried out on periodic patterns on silicon substrates in order to determine the average morphology a... Real time scatterometry for profile control during resist trimming process [作者：El Kodadi, M; Soulan, S; Besacier, M; Schiavone, P,期刊：Journal Of Vacuum Science & Technology B, 页码：3232-3237 , 文章类型： Article，,卷期：2009年27-6] In situ and real time control of the different process steps in semiconductor device manufacturing becomes a critical challenge, especially for the lithography and plasma etching processes. Dynamic scatterometry is among...