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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共180条记录   In situ x-ray absorption near-edge structure analysis for extreme ultraviolet lithography projection optics contamination [作者：Niibe, M; Kakutani, Y; Koida, K; Matsunari, S; Aoki, T; Terashima, S; Takase, H; Murakami, K; Fukuda, Y,期刊：Journal Of Vacuum Science & Technology B, 页码：2118-2122 , 文章类型： Article，,卷期：2007年25-6] A contamination evaluation system for extreme ultraviolet (EUV) lithography projection optics was developed in the NewSUBARU SR facility, in which in situ surface analysis and elemental concentration mapping were carried... Bit-array patterns with density over 1 Tbit/in.(2) fabricated by extreme ultraviolet interference lithography [作者：Solak, HH; Ekinci, Y,期刊：Journal Of Vacuum Science & Technology B, 页码：2123-2126 , 文章类型： Article，,卷期：2007年25-6] The use of patterned magnetic media in future data storage devices requires the fabrication of two-dimensional periodic patterns with resolution well below 35 nm in terms of the pattern period. The authors have used extr... Extreme ultraviolet lithography at IMEC: Shadowing compensation and flare mitigation strategy [作者：Lorusso, GF; Goethals, AM; Jonckheere, R; Hermans, J; Ronse, K; Myers, AM; Niroomand, A; Kim, I; Niroomand, A; Iwamoto, F; Ritter, D,期刊：Journal Of Vacuum Science & Technology B, 页码：2127-2131 , 文章类型： Article，,卷期：2007年25-6] The extreme ultraviolet lithography (EUVL) program at IMEC is aimed to tackle many unsolved critical issues of EUV lithography as the technology moves towards production, by focusing specifically on tool, resist, and mas... Advanced resist testing using the SEMATECH Berkeley extreme ultraviolet microfield exposure tool [作者：Naulleau, PP; Anderson, CN; Dean, K; Denham, P; Goldberg, KA; Hoef, B; Niakoula, D; La Fontaine, B; Wallow, T,期刊：Journal Of Vacuum Science & Technology B, 页码：2132-2135 , 文章类型： Article，,卷期：2007年25-6] Recent upgrades made to the SEMATECH Berkeley microfield exposure tool are summarized and some of the latest resist characterization results are presented. Tool illumination uniformity covering the full 200x600 mu m(2) w... Optimizing nanoimprint and transfer-bonding techniques for three-dimensional polymer microstructures [作者：Park, H; Li, HF; Cheng, X,期刊：Journal Of Vacuum Science & Technology B, 页码：2325-2328 , 文章类型： Article，,卷期：2007年25-6] Successful fabrication of three-dimensional multilayer microstructures in thermoplastic polymers using optimized layer-transfer and transfer-bonding techniques are reported in this work. For successful multilayer fabrica... Fabrication of terahertz holograms [作者：Walsby, ED; Alton, J; Worrall, CH; Beere, HE; Ritchie, DA; Leach, J; Padgett, M; Cumming, DRS,期刊：Journal Of Vacuum Science & Technology B, 页码：2329-2332 , 文章类型： Article，,卷期：2007年25-6] The authors demonstrate the fabrication of polypropylene eight-level holograms with arbitrary patterns for use in terahertz beam forming and imaging applications. They make a binary master in silicon using multistage dee... UV-nanoimprint with the assistance of gas condensation at atmospheric environmental pressure [作者：Hiroshima, H; Komuro, M,期刊：Journal Of Vacuum Science & Technology B, 页码：2333-2336 , 文章类型： Article，,卷期：2007年25-6] Nanoimprint should be carried out in an ordinary environment from the standpoint of cost-performance. However, bubble defects arise when the process is done in air and the problem can become worse with large patterns and... Geometry impact on ultrahigh resolution pattern collapse [作者：Jouve, A; Simon, J; Gonon, L; Tortai, JH,期刊：Journal Of Vacuum Science & Technology B, 页码：2504-2507 , 文章类型： Article，,卷期：2007年25-6] Pattern collapse is one critical issue that lithography must overcome to address future high resolution nodes (32 and 22 nm). Published pattern collapse models showed that lines collapse when the capillary pressure exert... Pixelated chemically amplified resists: Investigation of material structure on the spatial distribution of photoacids and line edge roughness [作者：La, YH; Park, SM; Meagley, RP; Leolukman, M; Gopalan, P; Nealey, PF,期刊：Journal Of Vacuum Science & Technology B, 页码：2508-2513 , 文章类型： Article，,卷期：2007年25-6] Preorganized pixel-forming photoresists were prepared to investigate the effect of well-defined material structures and the spatial distribution of photoacid on line edge roughness of chemically amplified photoresists. A... Direct measurement of the spatial extent of the in situ developed latent image by neutron reflectivity [作者：Prabhu, VM; Vogt, BD; Kang, S; Rao, A; Lin, EK; Satija, SK,期刊：Journal Of Vacuum Science & Technology B, 页码：2514-2520 , 文章类型： Article，,卷期：2007年25-6] The spatial distribution of polymer photoresist and deuterium labeled base developer highlights a fraction of the line edge that swells but does not dissolve. This residual swelling fraction remains swollen during both t... High throughput defect detection with multiple parallel electron beams [作者：Van Himbergen, HMP; Nijkerk, MD; De Jager, PWH; Hosman, TC; Kruit, P,期刊：Journal Of Vacuum Science & Technology B, 页码：2521-2525 , 文章类型： Article，,卷期：2007年25-6] A new concept for high throughput defect detection with multiple parallel electron beams is described. As many as 30 000 beams can be placed on a footprint of a in.(2), each beam having its own microcolumn and detection ... Optimized plasma-deposited fluorocarbon coating for dry release and passivation of thin SU-8 cantilevers [作者：Keller, S; Haefliger, D; Boisen, A,期刊：Journal Of Vacuum Science & Technology B, 页码：1903-1908 , 文章类型： Article，,卷期：2007年25-6] Plasma-deposited fluorocarbon coatings are introduced as a convenient method for the dry release of polymer structures. In this method, the passivation process in a deep reactive ion etch reactor was used to deposit hydr... Structural characteristics of single-crystal nanowires grown by self-catalytic chemical vapor deposition method [作者：He, MQ; Mohammad, SN,期刊：Journal Of Vacuum Science & Technology B, 页码：1909-1915 , 文章类型： Article，,卷期：2007年25-6] Physical characteristics of III-V nitride nanowires grown by the self-catalytic chemical vapor deposition method have been studied. The nanowire shape (uniform or tapered) and nanowire branching are found to depend on a ... Atomic diffusion and electronic structure in Al0.52In0.48P/GaAs heterostructures [作者：Smith, PE; Lueck, M; Ringel, SA; Brillson, LJ,期刊：Journal Of Vacuum Science & Technology B, 页码：1916-1921 , 文章类型： Article，,卷期：2007年25-6] In order to investigate the relationship between atomic diffusion and electronic structure in the epitaxial AlInP/GaAs system, the authors have performed cross-sectional cathodoluminescence spectroscopy and secondary ion... Effects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performance [作者：Lee, CT; Henderson, CL; Wang, MX; Gonsalves, KE; Yueh, W,期刊：Journal Of Vacuum Science & Technology B, 页码：2136-2139 , 文章类型： Article，,卷期：2007年25-6] The need for chemically amplified resists (CARs) that can resolve sub-65-nm node features with sufficient linewidth roughness (LWR) control and sensitivity to meet the requirements outlined in the International Technolog... Influence of solubility switching mechanism on resist performance in molecular glass resists [作者：Lawson, RA; Lee, CT; Henderson, CL; Whetsell, R; Tolbert, L; Yueh, W,期刊：Journal Of Vacuum Science & Technology B, 页码：2140-2144 , 文章类型： Article，,卷期：2007年25-6] Five different molecular glass chemically amplified photoresists which utilized different solubility switching mechanisms and chemistries, based on a tris(4-hydroxyphenyl)ethane (THPE) core, were synthesized and their pe...