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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共171条记录   Fabrication of metal patterns on freestanding graphenoid nanomembranes [作者：Beyer, A; Turchanin, A; Nottbohm, CT; Mellech, N; Schnietz, M; Golzhauser, A,期刊：Journal Of Vacuum Science & Technology B, 页码：C6D5-C6D10 , 文章类型： Article，,卷期：2010年28-6] Metallic patterns on freestanding ultrathin supports are desirable for many applications in modern optics or nanomechanics. The authors present four fabrication paths to create gold patterns that are supported by 1 nm th... Effects of salty-developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense pattern transfer [作者：Yan, M; Lee, J; Ofuonye, B; Choi, S; Jang, JH; Adesida, I,期刊：Journal Of Vacuum Science & Technology B, 页码：C6S23-C6S27 , 文章类型： Article，,卷期：2010年28-6] The characteristics of salty developers, TMAH/NaCl and NaOH/NaCl, on the processing of hydrogen silsesquioxane (HSQ) resist at elevated temperatures were investigated. The TMAH/NaCl developer demonstrated better contrast... Comparison of positive tone versus negative tone resist pattern collapse bahavior* [作者：Yeh, WM; Noga, DE; Lawson, RA; Tolbert, LM; Henderson, CL,期刊：Journal Of Vacuum Science & Technology B, 页码：C6S6-C6S11 , 文章类型： Article，,卷期：2010年28-6] In this work, e-beam lithography patterns have been specifically designed and fabricated which provide the opportunity to probe the collapse behavior of both positive and negative tone systems. The pattern layout include... Different growth mechanisms of vertical carbon nanotubes by rf- or dc-plasma enhanced chemical vapor deposition at low temperature [作者：Wang, HY; Moore, JJ,期刊：Journal Of Vacuum Science & Technology B, 页码：1081-1085 , 文章类型： Article，,卷期：2010年28-6] Vertically aligned carbon nanotubes (CNTs) were synthesized using FeNi or Fe sputtered catalyst layers on glass substrates by radio frequency or direct current plasma enhanced chemical vapor deposition (rf- or dc-PECVD).... Wavelength-specific reflections: A decade of extreme ultraviolet actinic mask inspection research [作者：Goldberg, KA; Mochi, I,期刊：Journal Of Vacuum Science & Technology B, 页码：C6E1-C6E10 , 文章类型： Article，,卷期：2010年28-6] Mask inspection is essential for the success of any pattern transfer lithography technology, and extreme ultraviolet lithography (EUVL), in particular, faces unique challenges. EUV masks' resonant-reflective multilayer c... Actinic imaging and evaluation of phase structures on extreme ultraviolet lithography masks [作者：Mochi, I; Goldberg, KA; Huh, S,期刊：Journal Of Vacuum Science & Technology B, 页码：C6E11-C6E16 , 文章类型： Article，,卷期：2010年28-6] The authors describe the implementation of a phase-retrieval algorithm to reconstruct the phase and complex amplitude of structures on extreme ultraviolet (EUV) lithography masks. Many native defects commonly found on EU... Assessing the mask clamping ability of a low thermal expansion material chuck [作者：Zeuske, JR; Vukkadala, P; Engelstad, RL; Mikkelson, AR; Kalkowski, G; Risse, S; Mueller, S,期刊：Journal Of Vacuum Science & Technology B, 页码：C6E17-C6E22 , 文章类型： Article，,卷期：2010年28-6] The successful implementation of extreme ultraviolet lithography (EUVL) for patterning in the sub-32 nm regime will require significant improvements in image placement (IP) accuracy over the next few years. The IP error ... Extreme ultraviolet mask substrate surface roughness effects on lithographic patterning [作者：George, SA; Naulleau, PP; Mochi, I; Salmassi, F; Gullikson, EM; Goldberg, KA; Anderson, EH,期刊：Journal Of Vacuum Science & Technology B, 页码：C6E23-C6E30 , 文章类型： Article，,卷期：2010年28-6] In extreme ultraviolet lithography exposure systems, mask substrate roughness-induced scatter contributes to line edge roughness (LER) at the image plane. In this article, the impact of mask substrate roughness on image ... Extreme ultraviolet mask surface cleaning effects on lithography process performance [作者：George, SA; Baclea-an, LM; Naulleau, PP; Chen, RJ; Liang, T,期刊：Journal Of Vacuum Science & Technology B, 页码：C6E31-C6E35 , 文章类型： Article，,卷期：2010年28-6] Extreme UV (EUV) masks are expected to undergo cleaning processes in order to maintain the lifetimes necessary for high volume manufacturing. For this study, the impact of repetitive cleaning of EUV masks on imaging perf... High transmission pellicles for extreme ultraviolet lithography reticle protection [作者：Shroff, YA; Leeson, M; Yan, PY; Gullikson, E; Salmassi, F,期刊：Journal Of Vacuum Science & Technology B, 页码：C6E36-C6E41 , 文章类型： Article，,卷期：2010年28-6] The authors present the results of a full-field extreme ultraviolet (EUV) pellicle for reticle protection and defect mitigation. Based on novel microelectromechanical systems based fabrication, it comprises a 50 nm Si me... Focused chromium ion beam [作者：Steele, AV; Knuffman, B; McClelland, JJ; Orloff, J,期刊：Journal Of Vacuum Science & Technology B, 页码：C6F1-C6F5 , 文章类型： Article，,卷期：2010年28-6] With the goal of expanding the capabilities of focused ion beam microscopy and milling systems, the authors have demonstrated nanoscale focusing of chromium ions produced in a magneto-optical trap ion source. Neutral chr... Design of a parallel mass spectrometer for focused ion beam columns [作者：Khursheed, A; Cheong, KH; Hoang, HQ,期刊：Journal Of Vacuum Science & Technology B, 页码：C6F10-C6F14 , 文章类型： Article，,卷期：2010年28-6] This article describes a parallel mass spectrometer design suitable for use as an add-on attachment for focused ion beam instruments. It consists of an acceleration transfer lens, an electric sector deflector, and a vari... Gas field ion source and liquid metal ion source charged particle material interaction study for semiconductor nanomachining applications [作者：Tan, SD; Livengood, R; Shima, D; Notte, J; McVey, S,期刊：Journal Of Vacuum Science & Technology B, 页码：C6F15-C6F21 , 文章类型： Article，,卷期：2010年28-6] Semiconductor manufacturing technology nodes will evolve to the 22, 15, and 11 nm generations in the next few years. For semiconductor nanomachining applications, further beam spot size scaling is required beyond what is... Influence of the tip work function on scanning tunneling microscopy and spectroscopy on zinc doped GaAs [作者：Wijnheijmer, AP; Garleff, JK; van der Heijden, MA; Koenraad, PM,期刊：Journal Of Vacuum Science & Technology B, 页码：1086-1092 , 文章类型： Article，,卷期：2010年28-6] The authors investigated the influence of the tip work function on the signatures of zinc in gallium arsenide with scanning tunneling microscopy and spectroscopy. By deliberately inducing tip modifications, the authors c... Field-emission of TiSi2 thin film deposited by an in situ chloride-generated route [作者：Hu, YM; Li, Y; Zhu, MY; Hu, Z; Yu, LS,期刊：Journal Of Vacuum Science & Technology B, 页码：1093-1096 , 文章类型： Article，,卷期：2010年28-6] Titanium disilicide (TiSi2) is a high-melting compound with excellent conductivity, which appears to have potential applications in field-emission. In the present article, TiSi2 thin film was successfully synthesized on ... Characterization of electrodeposited Ni-Fe-SiC alloys for microelectromechanical applications [作者：Zheng, XH; Chen, X; Gu, F; Liu, YW; Lee, DW,期刊：Journal Of Vacuum Science & Technology B, 页码：1097-1099 , 文章类型： Article，,卷期：2010年28-6] Ni-Fe-SiC alloy is a promising material for the fabrication of microactuators. In this article, the electrolytic codeposition technique is used to deposit the Ni-Fe-SiC composite onto stainless-steel substrates, where ni...