- Temperature dependent lattice constant of Al0.90Ga0.10AsySb1-y
[作者:Breivik, M; Nilsen, TA; Myrvagnes, G; Selvig, E; Fimland, BO,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- Using x-ray diffraction, the in-plane and out-of-plane lattice constants of Al0.90Ga0.10AsySb1-y epilayers grown on GaSb and GaAs substrates were determined between 30 and 398 degrees C for y=0.003-0.059. The bulk lattic...
- Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well
[作者:Ban, KY; Dahal, SN; Honsberg, CB; Nataraj, L; Bremner, SP; Cloutier, SG,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- Room temperature capacitance-voltage (C-V) profile and photoluminescence (PL) studies of delta-doped single InGaAs quantum well samples are reported. The purpose was to obtain the confined carrier occupancy in the conduc...
- Photoionization study of deep centers in GaN/AlGaN multiple quantum wells
[作者:Zhang, SK; Wang, WB; Alfano, RR; Teke, A; He, L; Dogan, S; Johnstone, DJ; Morkoc, H,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- Transient photocapacitance (TPC) measurements were performed to investigate deep centers in GaN/AlGaN multiple quantum wells. The influence of the persistent photovoltaic effect was successfully separated during the TPC ...
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