- Experimental validation of full-field extreme ultraviolet lithography flare and shadowing corrections
[作者:Myers, AM; Lorusso, GF; Kim, I; Goethals, AM; Jonckheere, R; Hermans, J; Baudemprez, B; Ronse, K,期刊:Journal Of Vacuum Science & Technology B, 页码:2215-2219 , 文章类型: Article,,卷期:2008年26-6]
- Extreme ultraviolet lithography (EUVL) is the leading candidate for 22 nm half-pitch device manufacturing. IMEC has a fully integrated 300 mm EUVL process line incorporating an Alpha Demo Tool (ADT) from ASML, aimed to u...
- Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture
[作者:Goldberg, KA; Naulleau, P; Mochi, I; Anderson, EH; Rekawa, SB; Kemp, CD; Gunion, RF; Han, HS; Huh, S,期刊:Journal Of Vacuum Science & Technology B, 页码:2220-2224 , 文章类型: Article,,卷期:2008年26-6]
- The SEMATECH Berkeley actinic inspection tool (AIT) is an extreme ultraviolet (EUV)-wavelength mask inspection microscope designed for direct aerial image measurements and precommercial EUV mask research. Operating on a ...
- Ion track lithography and graphitic nanowires in diamondlike carbon
[作者:Krauser, J; Nix, AK; Gehrke, HG; Hofsass, H; Trautmann, C; Weidinger, A; Wunsch, F; Bruns, J,期刊:Journal Of Vacuum Science & Technology B, 页码:2468-2472 , 文章类型: Article,,卷期:2008年26-6]
- Ion track lithography is well established and is based on heavy ions of several hundred MeV energy passing through a polymer film and thereby changing the material properties along the trajectory of each ion. By selectiv...
- Relief and trench formation on chalcogenide thin films using electron beams
[作者:Hoffman, GB; Liu, WC; Zhou, W; Sooryakumar, R; Boolchand, P; Reano, RM,期刊:Journal Of Vacuum Science & Technology B, 页码:2478-2483 , 文章类型: Article,,卷期:2008年26-6]
- Electron beam irradiation of amorphous GeSe4 thin films reveals formation of reliefs and trenches as a function of electron beam dose. Mounds as high as 115 nm are observed at low electron beam dose and trenches as deep ...
- Impact of trench width roughness on the graphoepitaxial assembly of block copolymers
[作者:Welander, AM; Nealey, PF; Cao, H; Bristol, R,期刊:Journal Of Vacuum Science & Technology B, 页码:2484-2488 , 文章类型: Article,,卷期:2008年26-6]
- In this paper, the authors investigated constraints on the quality of topographic features needed for graphoepitaxial assembly of cylinder forming poly(styrene-b-methyl methacrylate) (PS-b-PMMA) thin films, showing the i...
- Si-containing block copolymers for self-assembled nanolithography
[作者:Ross, CA; Jung, YS; Chuang, VP; Ilievski, F; Yang, JKW; Bita, I; Thomas, EL; Smith, HI; Berggren, KK; Vancso, GJ; Cheng, JY,期刊:Journal Of Vacuum Science & Technology B, 页码:2489-2494 , 文章类型: Article,,卷期:2008年26-6]
- Block copolymers can self-assemble to generate patterns with nanoscale periodicity, which may be useful in lithographic applications. Block copolymers in which one block is organic and the other contains Si are appealing...
- Stability of HSQ nanolines defined by e-beam lithography for Si nanowire field effect transistors
[作者:Regonda, S; Aryal, M; Hu, WC,期刊:Journal Of Vacuum Science & Technology B, 页码:2247-2251 , 文章类型: Article,,卷期:2008年26-6]
- Multiple instability states, e.g., grouped collapse, single collapse, wavy, and grouped wavy states, have been observed in hydrogen silses quioxane (HSQ) nanolines defined by electron beam lithography (EBL). Experimental...
- Novel negative-tone molecular resist based on polyphenol derivative for extreme ultraviolet lithography
[作者:Oizumi, H; Kumise, T; Itani, T,期刊:Journal Of Vacuum Science & Technology B, 页码:2252-2256 , 文章类型: Article,,卷期:2008年26-6]
- This study investigated the extreme ultraviolet (EUV) lithographic performance of negative-tone molecular resists based on 2,7-bis[bis(2,3,5-trimethyl-4-hydroxyphenyl)methyl]naphthalene (MGR002) and their negative-tone i...
- Directed assembly of asymmetric ternary block copolymer-homopolymer blends using symmetric block copolymer into checkerboard trimming chemical pattern
[作者:Kang, H; Craig, GSW; Nealey, PF,期刊:Journal Of Vacuum Science & Technology B, 页码:2495-2499 , 文章类型: Article,,卷期:2008年26-6]
- Here, the authors studied the directed assembly of the asymmetric ternary blends, composed of polystyrene-block-poly(methyl methacrylate) copolymer (PS-b-PMMA) and the corresponding PS and PMMA homopolymers, on a checker...
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