- Ultradense gold nanostructures fabricated using hydrogen silsesquioxane resist and applications for surface-enhanced Raman spectroscopy
[作者:Choi, S; Yan, MJ; Adesida, I; Hsu, KH; Fang, NX,期刊:Journal Of Vacuum Science & Technology B, 页码:2640-2643 , 文章类型: Article,,卷期:2009年27-6]
- Metal nanostructures have been routinely fabricated by lift-off process using electron-beam lithography. However, for ultradense structures, this method has been limited by metal film thickness with resulting poor patter...
- Gas assisted focused electron beam induced etching of alumina
[作者:Bret, T; Afra, B; Becker, R; Hofmann, T; Edinger, K; Liang, T; Hoffmann, P,期刊:Journal Of Vacuum Science & Technology B, 页码:2727-2731 , 文章类型: Article,,卷期:2009年27-6]
- This study investigates focused electron beam induced etching for the removal of alumina particles on patterned extreme ultra violet (EUV) mask using nitrosyl chloride (NOCl) as assist gas. As potential contaminant, part...
- Understanding the base development mechanism of hydrogen silsesquioxane
[作者:Kim, J; Chao, WL; Griedel, B; Liang, XG; Lewis, M; Hilken, D; Olynick, D,期刊:Journal Of Vacuum Science & Technology B, 页码:2628-2634 , 文章类型: Article,,卷期:2009年27-6]
- The authors study the dissolution mechanism of hydrogen silsesquioxane in base solutions with the addition of chloride salts to elucidate the development mechanism. The reaction mechanisms are proposed based on the disso...
- Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
[作者:Yang, JKW; Cord, B; Duan, HG; Berggren, KK; Klingfus, J; Nam, SW; Kim, KB; Rooks, MJ,期刊:Journal Of Vacuum Science & Technology B, 页码:2622-2627 , 文章类型: Article,,卷期:2009年27-6]
- The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wh...
- Limiting factors in sub-10 nm scanning-electron-beam lithography
[作者:Cord, B; Yang, J; Duan, HG; Joy, DC; Klingfus, J; Berggren, KK,期刊:Journal Of Vacuum Science & Technology B, 页码:2616-2621 , 文章类型: Article,,卷期:2009年27-6]
- Achieving the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications [F. S. Bates and G. ...
- Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer
[作者:Nam, SW; Rooks, MJ; Yang, JKW; Berggren, KK; Kim, HM; Lee, MH; Kim, KB; Sim, JH; Yoon, DY,期刊:Journal Of Vacuum Science & Technology B, 页码:2635-2639 , 文章类型: Article,,卷期:2009年27-6]
- The authors investigated a contrast enhancement behavior of hydrogen silsesquioxane (HSQ) in a salty development system (NaOH/NaCl). Time-resolved analysis of contrast curves and line-grating patterns were carried out to...
- Low energy Ar+ ion beam machining of Si thin layer deposited on a Zerodur (R) substrate for extreme ultraviolet lithography projection optics
[作者:Iwata, T; Fujiwara, K; Pahlovy, SA; Miyamoto, I,期刊:Journal Of Vacuum Science & Technology B, 页码:2894-2899 , 文章类型: Article,,卷期:2009年27-6]
- For the final correction of the surface figure error of aspherical substrates used in the optics of extreme ultraviolet lithography, ion beam figuring (IBF), which is essentially a machining technique, is regarded as the...
- Double-anchoring fluorinated molecules for antiadhesion mold treatment in UV nanoimprint lithography
[作者:Zelsmann, M; Truffier-Boutry, D; Francone, A; Alleaume, C; Kurt, I; Beaurain, A; Pelissier, B; Pepin-Donat, B; Lombard, C; Boussey, J,期刊:Journal Of Vacuum Science & Technology B, 页码:2873-2876 , 文章类型: Article,,卷期:2009年27-6]
- In this work, the authors evaluate a new type of perfluoropolyether molecule (FLUOROLINK (R) S10) to be used as an antisticking mold treatment in UV nanoimprint lithography. Unlike currently used ones, this molecule has ...
- Nanoimprint planarization of high aspect ratio nanostructures using inorganic and organic resist materials
[作者:Chang, ASP; Peroz, C; Liang, XG; Dhuey, S; Harteneck, B; Cabrini, S,期刊:Journal Of Vacuum Science & Technology B, 页码:2877-2881 , 文章类型: Article,,卷期:2009年27-6]
- Planarization is often crucial to the implementation of three-dimensional devices and systems. By using a pressing process analogous to nanoimprint, the authors show that moderate to high aspect ratio (>= 3) photonic nan...
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