- Transcription of domain patterns in near-stoichiometric magnesium-doped lithium niobate
[作者:Zeng, H; Kong, YF; Tian, TA; Chen, SL; Zhang, L; Sun, TQ; Rupp, R; Xu, JJ,期刊:Applied Physics Letters, 页码:201901-201901 , 文章类型: Article,,卷期:2010年97-20]
- Recently, light-induced domain reversal has been developed to a promising method for domain engineering, but the depth of reversed domain is only of several tens of microns, which greatly limits its practical application...
- Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the near-infrared to the ultraviolet
[作者:Ben Sedrine, N; Bouhafs, C; Harmand, JC; Chtourou, R; Darakchieva, V,期刊:Applied Physics Letters, 页码:201903-201903 , 文章类型: Article,,卷期:2010年97-20]
- We study the effect of nitrogen on the GaAs0.9-xNxSb0.1 (x = 0.00, 0.65%, 1.06%, 1.45%, and 1.90%) alloy dielectric function by spectroscopic ellipsometry in the energy range from 0.73 to 4.75 eV. The compositional depen...
- Structure of few-layer epitaxial graphene on 6H-SiC(0001) at atomic resolution
[作者:Weng, XJ; Robinson, JA; Trumbull, K; Cavalero, R; Fanton, MA; Snyder, D,期刊:Applied Physics Letters, 页码:201905-201905 , 文章类型: Article,,卷期:2010年97-20]
- Using directly interpretable atomic-resolution cross-sectional scanning transmission electron microscopy, we have investigated the structure of few-layer epitaxial graphene (EG) on 6H-SiC(0001). We show that the buried i...
- Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO3/Si templates
[作者:Gobaut, B; Penuelas, J; Cheng, J; Chettaoui, A; Largeau, L; Hollinger, G; Saint-Girons, G,期刊:Applied Physics Letters, 页码:201908-201908 , 文章类型: Article,,卷期:2010年97-20]
- Integrating III-V semiconductors on Si is one of the major challenges of epitaxial growth and presents important applicative interest. We describe here an approach based on the use of crystalline SrTiO3 (STO)/Si template...
- An in situ tunable radio-frequency quantum point contact
[作者:Muller, T; Kueng, B; Hellmuller, S; Studerus, P; Ensslin, K; Ihn, T; Reinwald, M; Wegscheider, W,期刊:Applied Physics Letters, 页码:202104-202104 , 文章类型: Article,,卷期:2010年97-20]
- Incorporating a variable capacitance diode into a radio-frequency (rf) matching circuit allows us to in situ tune the resonance frequency of a rf quantum point contact, increasing the versatility of the latter as a fast ...
- Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation
[作者:Park, H; Xu, Y; Varga, K; Qi, JB; Feldman, LC; Lupke, G; Tolk, N,期刊:Applied Physics Letters, 页码:202105-202105 , 文章类型: Article,,卷期:2010年97-20]
- We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the Si/SiO2 interface, using a two-color pump-probe approach involving internal photoemission and seco...
- Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures
[作者:Bhat, TN; Roul, B; Rajpalke, MK; Kumar, M; Krupanidhi, SB; Sinha, N,期刊:Applied Physics Letters, 页码:202107-202107 , 文章类型: Article,,卷期:2010年97-20]
- The present work explores the temperature dependent transport behavior of n-InN nanodot/p-Si(100) heterojunction diodes. InN nanodot (ND) structures were grown on a 20 nm InN buffer layer on p-Si(100) substrates. These d...
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