- Evaluation of orbital moment in Ni-Zn ferrites: A magnetic Compton scattering study
[作者:Ahuja, BL; Mund, HS; Tiwari, S; Sahariya, J; Dashora, A; Itou, M; Sakurai, Y,期刊:Applied Physics Letters, 页码:132410-132410 , 文章类型: Article,,卷期:2012年100-13]
- Temperature dependent magnetic Compton profiles of Ni1-xZnxFe2O4 (x = 0.0, 0.1, 0.2) ferrites have been decomposed into component profiles to determine the site-specific magnetic moments. For a quantitative evaluation of...
- Experimental demonstration of wakefield effects in a THz planar diamond accelerating structure
[作者:Antipov, S; Jing, C; Kanareykin, A; Butler, JE; Yakimenko, V; Fedurin, M; Kusche, K; Gai, W,期刊:Applied Physics Letters, 页码:132910-132910 , 文章类型: Article,,卷期:2012年100-13]
- We have directly measured THz wakefields induced by a subpicosecond, intense relativistic electron bunch in a diamond loaded accelerating structure via the wakefield acceleration method. We present here the beam test res...
- Magnetic and structural properties of the Fe layers in CoO/Fe/Ag(001) heterostructure
[作者:Bali, R; Soares, MM; Ramos, AY; Tolentino, HCN; Yildiz, F; Boudot, C; Proux, O; De Santis, M; Przybylski, M; Kirschner, J,期刊:Applied Physics Letters, 页码:132403-132403 , 文章类型: Article,,卷期:2012年100-13]
- The influence of interfacial oxidation on the magnetic behaviour of CoO covered Fe/Ag(001) is reported. Coverage with CoO causes the formation of a mixed Fe2O3-Fe3O4 interfacial oxide layer. The depth of the Fe-oxide var...
- Very low bias stress in n-type organic single-crystal transistors
[作者:Barra, M; Di Girolamo, FV; Minder, NA; Lezama, IG; Chen, Z; Facchetti, A; Morpurgo, AF; Cassinese, A,期刊:Applied Physics Letters, 页码:133301-133301 , 文章类型: Article,,卷期:2012年100-13]
- Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using N,N'-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s (PDIF-CN2) single-crystal devices with Cytop g...
- Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC
[作者:Chen, B; Matsuhata, H; Sekiguchi, T; Kinoshita, A; Ichinoseki, K; Okumura, H,期刊:Applied Physics Letters, 页码:132108-132108 , 文章类型: Article,,卷期:2012年100-13]
- Minority-carrier lifetime is one of the key parameters governing the performance of semiconductor devices. Here, we report on tuning the minority-carrier lifetime through stacking fault ( SF) defects in polytypic SiC. Th...
- Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with fluorinated Al2O3 as gate dielectrics
[作者:Chen, C; Liu, XZ; Zhang, JH; Tian, BL; Jiang, HC; Zhang, WL; Li, YR,期刊:Applied Physics Letters, 页码:133507-133507 , 文章类型: Article,,卷期:2012年100-13]
- The enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MISHEMTs) were realized by using fluorinated Al2O3 as gate dielectrics. The variations in binding-energy spectrum ...
- Tuning asymmetry parameter of Fano resonance of spoof surface plasmons by modes coupling
[作者:Cheng, F; Liu, HF; Li, BH; Han, J; Xiao, H; Han, XF; Gu, CZ; Qiu, XG,期刊:Applied Physics Letters, 页码:131110-131110 , 文章类型: Article,,卷期:2012年100-13]
- We report a kind of subwavelength, compound hole arrays formed by two nested sub-lattices used to modulate the Fano resonance of spoof surface plasmons (SSPs). Experiments complemented with numerical simulations show tha...
- Band gap tuning in ferroelectric Bi4Ti3O12 by alloying with LaTMO3 (TM = Ti, V, Cr, Mn, Co, Ni, and Al)
[作者:Choi, WS; Lee, HN,期刊:Applied Physics Letters, 页码:132903-132903 , 文章类型: Article,,卷期:2012年100-13]
- We fabricated ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaTMO3 (TM = Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO3 substrates by pulsed laser epitaxy. When transition metal...
- First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
[作者:Clima, S; Chen, YY; Degraeve, R; Mees, M; Sankaran, K; Govoreanu, B; Jurczak, M; De Gendt, S; Pourtois, G,期刊:Applied Physics Letters, 页码:133102-133102 , 文章类型: Article,,卷期:2012年100-13]
- Transition metal oxide-based resistor random access memory (RRAM) takes advantage of oxygen-related defects in its principle of operation. Since the change in resistivity of the material is controlled by the oxygen defic...
- Ferromagnetic phase transition in zinc blende (Mn,Cr)S-layers grown by molecular beam epitaxy
[作者:Demper, M; Heimbrodt, W; Bradford, C; Prior, KA; Kehrle, J; von Nidda, HAK; Loidl, A,期刊:Applied Physics Letters, 页码:132405-132405 , 文章类型: Article,,卷期:2012年100-13]
- We studied the magnetization of zinc blende Mn1-xCrxS films embedded between diamagnetic ZnSe layers grown by molecular beam epitaxy with chromium mole fractions x <= 0.7. These ternary semiconductors exhibit an increasi...
- Absolute calibration of optical tweezers including aberrations
[作者:Dutra, RS; Viana, NB; Neto, PAM; Nussenzveig, HM,期刊:Applied Physics Letters, 页码:131115-131115 , 文章类型: Article,,卷期:2012年100-13]
- We extend a previous proposal for absolute calibration of optical tweezers by including optical setup aberrations into the first-principles theory, with no fitting parameters. Astigmatism, the dominant term, is determine...
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