- Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry
[作者:Weilnboeck, F; Bruce, RL; Engelmann, S; Oehrlein, GS; Nest, D; Chung, TY; Graves, D; Li, M; Wang, D; Andes, C; Hudson, EA,期刊:Journal Of Vacuum Science & Technology B, 页码:993-1004 , 文章类型: Article,,卷期:2010年28-5]
- While vacuum ultraviolet (VUV) photon irradiation has been shown to significantly contribute to material modifications of polymers during plasma exposures, the impact of radiation-induced material alterations on roughnes...
- GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide
[作者:Polyakov, AY; Markov, AV; Duhnovsky, MP; Mezhennyi, MV; Donskov, AA; Malakhov, SS; Govorkov, AV; Kozlova, YP; Pavlov, VF; Smirnov, NB; Yugova, TG; Belogorokhov, AI; Belogorokhov, IA; Ratnikova, AK; Fyodorov, YY; Kudryashov, OY; Leontyev, IA; Ratushnyi, VI; Pearton, SJ,期刊:Journal Of Vacuum Science & Technology B, 页码:1011-1015 , 文章类型: Article,,卷期:2010年28-5]
- Growth of GaN on polycrystalline chemical vapor deposition (CVD) diamond prepared on Si was achieved by hydride vapor phase epitaxy (HVPE). If the polycrystalline CVD diamond is separated from the Si substrate and the si...
- Modified postannealing of the Ge condensation process for better-strained Si material and devices
[作者:Liu, XY; Ma, XB; Du, XF; Liu, WL; Song, ZT; Lin, CL,期刊:Journal Of Vacuum Science & Technology B, 页码:1020-1025 , 文章类型: Article,,卷期:2010年28-5]
- A modified postannealing at 1000 degrees C in N-2 ambient has been carried out to improve the Ge distribution in the SiGe layer fabricated by the Ge condensation process, which is a potential technique for strained Si fa...
- Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry
[作者:Prunnila, M; Meschke, M; Gunnarsson, D; Enouz-Vedrenne, S; Kivioja, JM; Pekola, JP,期刊:Journal Of Vacuum Science & Technology B, 页码:1026-1029 , 文章类型: Article,,卷期:2010年28-5]
- The authors investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom A1 electrode defines the tunnel junction area. The ex situ tunnel barrier is ...
- Holographic realization of hexagonal two dimensional photonic crystal structures with elliptical geometry
[作者:Hung, YJ; Lee, SL; Pan, YT; Thibeault, BJ; Coldren, LA,期刊:Journal Of Vacuum Science & Technology B, 页码:1030-1038 , 文章类型: Article,,卷期:2010年28-5]
- A complete investigation of holographic photonic crystal structures has been conducted. From both theoretical and experimental results, profiles of resultant patterns under different process conditions can be estimated a...
- a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers
[作者:Polyakov, AY; Markov, AV; Mezhennyi, MV; Donskov, AA; Malakhov, SS; Govorkov, AV; Kozlova, YP; Pavlov, VF; Smirnov, NB; Yugova, TG; Lee, IH; Han, J; Sun, Q; Pearton, SJ,期刊:Journal Of Vacuum Science & Technology B, 页码:1039-1043 , 文章类型: Article,,卷期:2010年28-5]
- Thick a-plane GaN films were grown by hydride vapor phase epitaxy on a-plane GaN templates prepared by metalorganic chemical vapor deposition (MOCVD) and also on a-plane MOCVD templates using in situ nitridized Ti underl...
- Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
[作者:Chang, CY; Anderson, T; Hite, J; Lu, L; Lo, CF; Chu, BH; Cheney, DJ; Douglas, EA; Gila, BP; Ren, F; Via, GD; Whiting, P; Holzworth, R; Jones, KS; Jang, S; Pearton, SJ,期刊:Journal Of Vacuum Science & Technology B, 页码:1044-1047 , 文章类型: Article,,卷期:2010年28-5]
- A threshold reverse bias of similar to 21 V was observed leading to a sharp increase in the gate current of AlGaN/GaN high electron mobility transistors biased at low source-drain voltage (5 V). The gate current increase...
- Effects of nanoscale Ni, Al, and Ni-Al interlayers on nucleation and growth of diamond on Si
[作者:Li, YS; Tang, Y; Yang, Q; Hirose, A,期刊:Journal Of Vacuum Science & Technology B, 页码:1056-1059 , 文章类型: Article,,卷期:2010年28-5]
- Diamond nucleation experiments on Si wafers, precoated with Ni, Al, and Ni-Al duplex intermediate layers, have been conducted in a microwave plasma enhanced chemical vapor deposition reactor. The diamond nucleation densi...
- Electron emission from silicon tip arrays controlled by np junction minority carrier injection
[作者:Young, RM; Nathanson, HC; Howell, RS; Stewart, EJ; Nechay, BA; Braggins, TT; Graves, EM; Van Campen, SD; Clarke, RC; Miserendino, SB; Hawk, J,期刊:Journal Of Vacuum Science & Technology B, 页码:1060-1065 , 文章类型: Article,,卷期:2010年28-5]
- The authors demonstrate for the first time the injection of electrons across an n-type to p-type silicon junction and their subsequent tunneling from approximately 1 mu m tall p-type silicon points into a vacuum gap. The...
- Investigation of the behavior of serum and plasma in a microfluidics system
[作者:Henderson, JC; Yacopucci, M; Chun, CJ; Lenghaus, K; Sommerhage, F; Hickman, JJ,期刊:Journal Of Vacuum Science & Technology B, 页码:1066-1069 , 文章类型: Editorial Material,,卷期:2010年28-5]
- There are common problems with adsorption of analytes on the surfaces of microfluidic systems with physiological samples such as blood serum, plasma, and urine. The authors' investigation involves the interaction of seru...
|