- Integrations and challenges of novel high-k gate stacks in advanced CMOS technology
[作者:He, G; Zhu, LQ; Sun, ZQ; Wan, Q; Zhang, LD,期刊:PROGRESS IN MATERIALS SCIENCE, 页码:475-572 , 文章类型: Review,,卷期:2011年56-5]
- Due to the limitations in conventional complementary metal-oxide-semiconductor (CMOS) scaling technology in recent years, innovation in transistor structures and integration of novel materials has been a key to enhancing...
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