- Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories - art. no. 223513
[作者:Rizzi, M; Spessot, A; Fantini, P; Ielmini, D,期刊:Applied Physics Letters, 页码:23513-23513 , 文章类型: Article,,卷期:2011年99-22]
- In a phase change memory (PCM), the device resistance increases slowly with time after the formation of the amorphous phase, thus affecting the stability of stored data. This work investigates the resistance drift in thi...
- Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices - art. no. 221101
[作者:Srour, H; Salvestrini, JP; Ahaitouf, A; Gautier, S; Moudakir, T; Assouar, B; Abarkan, M; Hamady, S; Ougazzaden, A,期刊:Applied Physics Letters, 页码:21101-21101 , 文章类型: Article,,卷期:2011年99-22]
- Large internal gains that can be obtained in wide band gap semiconductors-based (GaN and ZnO types) Schottky and/or metal-semiconductor-metal photodetectors are generally accompanied by large dark current and time respon...
- Temperature stability of the pentacene thin-film phase - art. no. 221911
[作者:Moser, A; Novak, J; Flesch, HG; Djuric, T; Werzer, O; Haase, A; Resel, R,期刊:Applied Physics Letters, 页码:21911-21911 , 文章类型: Article,,卷期:2011年99-22]
- This work presents the influence of temperatures above 300 K on the crystal structure and morphology of pentacene thin films. The thermal expansion of the unit cell and the relative amount of different phases are investi...
- The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration - art. no. 223510
[作者:Marquardt, B; Beckel, A; Lorke, A; Wieck, AD; Reuter, D; Geller, M,期刊:Applied Physics Letters, 页码:23510-23510 , 文章类型: Article,,卷期:2011年99-22]
- Using time-resolved transport spectroscopy, we investigate the influence of charge-tunable InAs quantum dots (QDs) on the conductance of a nearby two-dimensional electron gas (2DEG). Loading successively electrons into t...
- Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors - art. no. 223506
[作者:Gao, F; Lu, B; Li, LB; Kaun, S; Speck, JS; Thompson, CV; Palacios, T,期刊:Applied Physics Letters, 页码:23506-23506 , 文章类型: Article,,卷期:2011年99-22]
- The physical degradation of AlGaN/GaN high electron mobility transistors during OFF-state stress experiments has been systematically studied. Oxide particles and stringers were found to form along the gate edge of stress...
- Localized charge trapping and lateral charge diffusion in metal nanocrystal-embedded High-kappa/SiO2 gate stack - art. no. 222102
[作者:Lwin, ZZ; Pey, KL; Liu, C; Liu, Q; Zhang, Q; Chen, YN; Singh, PK; Mahapatra, S,期刊:Applied Physics Letters, 页码:22102-22102 , 文章类型: Article,,卷期:2011年99-22]
- In this work, we demonstrate a two-step analysis procedure that enables an in-depth understanding of the localized charge trapping and charge decay mechanisms in metal nanocrystal (MNC)-embedded high-kappa/SiO2 gate stac...
- Vapor-liquid-solid growth of Ge nanowhiskers enhanced by high-temperature glancing angle deposition - art. no. 223107
[作者:Suzuki, M; Hamachi, K; Hara, H; Nakajima, K; Kimura, K; Hsu, CW; Chou, LJ,期刊:Applied Physics Letters, 页码:23107-23107 , 文章类型: Article,,卷期:2011年99-22]
- We have demonstrated that the vapor-liquid-solid (VLS) growth of Ge nanowhiskers is significantly enhanced by high-temperature glancing angle deposition (HT-GLAD). At the substrate temperature of 420 degrees C, the Ge na...
- Magnetic properties of Sr2FeTaO6 double perovskite epitaxially grown by pulsed-laser deposition - art. no. 223101
[作者:Chakraverty, S; Saito, M; Tsukimoto, S; Ikuhara, Y; Ohtomo, A; Kawasaki, M,期刊:Applied Physics Letters, 页码:23101-23101 , 文章类型: Article,,卷期:2011年99-22]
- We have investigated the magnetic properties of B-site-ordered Sr2FeTaO6 double perovskite thin films grown on (111) SrTiO3 substrates by using pulsed-laser deposition. High degree of ordering of Fe and Ta ions has been ...
- Interface composition of InAs nanowires with Al2O3 and HfO2 thin films - art. no. 222907
[作者:Timm, R; Hjort, M; Fian, A; Borg, BM; Thelander, C; Andersen, JN; Wernersson, LE; Mikkelsen, A,期刊:Applied Physics Letters, 页码:22907-22907 , 文章类型: Article,,卷期:2011年99-22]
- Vertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical compo...
- Local atomic and electronic structures and ferroelectric properties of PbZr0.52Ti0.48O3: An x-ray absorption study (vol 99, 042909, 2011) - art. no. 229901
[作者:Ray, SC; Hsueh, HC; Wu, CH; Pao, CW; Asokan, K; Liu, MT; Tsai, HM; Chuang, CH; Pong, WF; Chiou, JW; Tsai, MH; Lee, JM; Jang, LY; Chen, JM; Lee, JF,期刊:Applied Physics Letters, 页码:29901-29901 , 文章类型: Correction,,卷期:2011年99-22]
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- Local structure and magnetic properties of Mn-doped 3C-SiC nanoparticles - art. no. 222512
[作者:Zheng, HW; Wang, ZQ; Liu, XY; Diao, CL; Zhang, HR; Gu, YZ,期刊:Applied Physics Letters, 页码:22512-22512 , 文章类型: Article,,卷期:2011年99-22]
- Mn-doped 3C-SiC nanoparticles have been fabricated by a sol-gel and carbothermal reduction method. The average particle size of the nanoparticles is about 126 nm. Raman scattering studies indicate that the transverse opt...
- X-ray interference effects on the determination of structural data in ultrathin La2/3Sr1/3MnO3 epitaxial thin films - art. no. 221901
[作者:Pesquera, D; Marti, X; Holy, V; Bachelet, R; Herranz, G; Fontcuberta, J,期刊:Applied Physics Letters, 页码:21901-21901 , 文章类型: Article,,卷期:2011年99-22]
- We analyze x-ray diffraction data to extract cell parameters of ultrathin films on closely matching substrates. We focus on epitaxial La2/3Sr1/3MnO3 films grown on (001) SrTiO3 single crystalline substrates. It will be s...
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